This application relates to a laser assembly displaying self-heating mitigation. The laser assembly comprises a semiconductor laser and a drive unit for driving the semiconductor laser. The semiconductor laser includes a first semiconductor region for generating or modulating an optical signal in response to a first drive current that is applied to the first semiconductor region, and a heating region that is arranged in proximity to the first semiconductor region and electrically insulated from the first semiconductor region. The drive unit is configured to generate the first drive current and a second drive current, apply the first drive current to the first semiconductor region during respective transmission periods of the semiconductor laser, and apply the second drive current to the heating region in intervals between successive transmission periods.

The laser system may include a delay circuit unit, first and second trigger-correction units, and a clock generator. The delay circuit unit may receive a trigger signal, output a first delay signal obtained by delaying the trigger signal by a first delay time, and output a second delay signal obtained by delaying the trigger signal by a second delay time. The first trigger-correction unit may receive the first delay signal and output a first switch signal obtained by delaying the first delay signal by a first correction time. The second trigger-correction unit may receive the second delay signal and output a second switch signal obtained by delaying the second delay signal by a second correction time. The clock generator may generate a clock signal that is common to the delay circuit unit and the first and second trigger-correction units.

A laser irradiation method of irradiating, with a pulse laser beam, an irradiation object in which an impurity source film is formed on a semiconductor substrate includes: reading fluence per pulse of the pulse laser beam with which a rectangular irradiation region set on the irradiation object is irradiated and the number of irradiation pulses the irradiation region is irradiated, the fluence being equal to or larger than a threshold at or beyond which ablation potentially occurs to the impurity source film when the irradiation object is irradiated with pulses of the pulse laser beam in the irradiation pulse number and smaller than a threshold at or beyond which damage potentially occurs to the surface of the semiconductor substrate; calculating a scanning speed Vdx; and moving the irradiation object at the scanning speed Vdx relative to the irradiation region while irradiating the irradiation region with the pulse laser beam at the repetition frequency f.

Systems, apparatuses, methods, and computer program products are provided for controlling a laser source that includes two laser discharge chambers. An example laser control system can include a first pulsed powertrain including a first independent circuit configured to generate a first resonant charging supply (RCS) output voltage. The first RCS output voltage can be configured to drive a first laser discharge chamber. The example laser control system can further include a second pulsed powertrain including a second independent circuit configured to generate a second RCS output voltage independent from the first RCS output voltage. The second RCS output voltage can be configured to drive a second laser discharge chamber independent from the first laser discharge chamber.

A laser device may include a laser resonator; a chamber arranged on an optical path of the laser resonator; a pair of electrodes arranged in the chamber; a power source applying a voltage to the electrodes; a storage unit storing a voltage value; and a control unit configured to set an application voltage value of the voltage applied to the electrodes as setting the application voltage value for outputting a pulse whose pulse number is equal to or larger than 1 and smaller than i based on the voltage command value and the voltage value stored in the storage unit, and setting the application voltage for outputting a pulse whose pulse number is equal to or larger than i and smaller than j based on the voltage command value and an offset value corresponding to the voltage command value, where i>1 and j>i.

A laser chamber apparatus may include a pipe, an inner electrode extending along a longitudinal direction of the pipe and disposed in a through hole in the pipe, an outer electrode including a contact plate extending along the longitudinal direction of the pipe and being in contact with an outer circumferential surface of the pipe and a ladder section formed of bar members each having one end connected to the contact plate and juxtaposed along a longitudinal direction of the contact plate, and a leaf spring extending along the longitudinal direction of the pipe and configured to press the outer electrode against the pipe. The leaf spring may include leaf spring pieces separated by slits, and the leaf spring pieces may each include a bent section bent along the edge and are configured to press the bar members in a position shifted from the bent sections toward the edge.

A laser apparatus includes: (A) a solid-state laser apparatus that outputs burst seed pulsed light containing a plurality of pulses; (B) an excimer amplifier that amplifies the burst seed pulsed light in a discharge space in a single occurrence of discharge and outputs the amplified light as amplified burst pulsed light; (C) an energy sensor that measures the energy of the amplified burst pulsed light; and (D) a laser controller that corrects the timing at which the solid-state laser apparatus is caused to output the burst seed pulsed light based on the relationship of the difference between the timing at which the solid-state laser apparatus outputs the burst seed pulsed light and the timing at which the discharge occurs in the discharge space with a measured value of the energy.

The laser doping apparatus may irradiate a predetermined region of a semiconductor material with a pulse laser beam to perform doping. The laser doping apparatus may include: a solution supplying system configured to supply dopant-containing solution to the predetermined region, and a laser system including at least one laser device configured to output the pulse laser beam to be transmitted by the dopant-containing solution, and a time-domain pulse waveform changing apparatus configured to control a time-domain pulse waveform of the pulse laser beam.

An excimer laser chamber device may include: a the laser chamber; a first electrode provided in the laser chamber; a second electrode provided in the laser chamber to face the first electrode; an electrode holder provided in the laser chamber to be connected to a high voltage; at least one connecting terminal including a first anchored portion anchored to the first electrode and a second anchored portion anchored to the electrode holder, the at least one connecting terminal being configured to electrically connect the first electrode and the electrode holder; a guide member held by the electrode holder, the guide member being configured to position the first electrode in a direction substantially perpendicular to both a direction of electric discharge between the first electrode and the second electrode and a longitudinal direction of the first electrode; and an electrode-gap-varying unit configured to move the first electrode in a direction substantially parallel to the direction of electric discharge.

To reduce the size of a magnetic circuit to be provided in a pulse power module for applying a high voltage in the form of a pulse across a pair of discharge electrodes which are disposed in a laser chamber of a gas laser apparatus, the magnetic circuit may include a magnetic core, an insulation member configured to contain a refrigerant flow path therein and cover the periphery of the magnetic core, and a winding wound around the insulation member.