A device for generating laser pulses is provided, the device having an optical parametric oscillator converts the laser pulses of a pump laser to laser pulses at a signal wavelength and at an idler wavelength. The optical parametric oscillator has an optical resonator with a non-linear wavelength converter. It is an object of the invention to provide a device that makes efficient generation of synchronous laser pulse trains with two different central wavelengths possible. To this end, the invention proposes that the pump laser is tunable with respect to the pump wavelength and the repetition frequency, wherein the resonator has an optical fibre with a dispersion in the range of 10-100 ps/nm and a length of 10-1000 m. The invention furthermore relates to a method for generating laser pulses using such a device.

A device for generating laser pulses is provided, the device having an optical parametric oscillator converts the laser pulses of a pump laser to laser pulses at a signal wavelength and at an idler wavelength. The optical parametric oscillator has an optical resonator with a non-linear wavelength converter. It is an object of the invention to provide a device that makes efficient generation of synchronous laser pulse trains with two different central wavelengths possible. To this end, the invention proposes that the pump laser is tunable with respect to the pump wavelength and the repetition frequency, wherein the resonator has an optical fibre with a dispersion in the range of 10-100 ps/nm and a length of 10-1000 m. The invention furthermore relates to a method for generating laser pulses using such a device.

Apparatus include a mode-locked laser cavity configured to produce a mode-locked output beam, wherein the laser cavity includes a gain medium situated in the laser cavity and an intracavity optical coating filter situated in the laser cavity to receive an intracavity beam, wherein the intracavity optical coating filter has an attenuation profile configured to suppress laser oscillation over a selected portion of the gain bandwidth of the gain medium and to increase a bandwidth of the mode-locked output beam based on the suppression. Related optical coatings are disclosed. Methods of arranging coatings and reducing pulse duration are also disclosed.

There is described a fiber laser system generally having a pump laser generating a pump laser beam; and a length of optical fiber optically coupled to the pump laser, the length of optical fiber having: a laser cavity having a cavity path, a first fiber Bragg grating having a first reflectivity profile, a second filter having a second filter profile, and an optical gain region between the first fiber Bragg grating and the second filter along the cavity path, the first reflectivity profile being spectrally detuned from the second filter profile, the first fiber Bragg grating having a first refractive index profile comprising a full width at half maximum bandwidth of at least 0.2 nm and a Gaussian-like apodization, wherein, upon pumping of the optical gain region with the pump laser beam and mode locking of the laser cavity, optical pulses are circulated along the cavity path; and an output.

A mid-infrared semiconductor saturable absorber mirror based on InAs/GaSb superlattice comprises a GaSb substrate with an anti-reflection film coated on the lower surface of the GaSb substrate; InAs/GaSb superlattice which has a specific structure and thickness and is arranged on the GaSb substrate; and Bragg reflection film which is arranged on the InAs/GaSb superlattice, wherein Bragg reflection film is composed of multiple pairs of ZnS and YbF.sub.3 film layers with a thickness of ¼ wavelength, and the YbF.sub.3 film layer is connected with the InAs/GaSb superlattice. The device not only has a mid-infrared working range with a broadband operation bandwidth, but also has the advantages of designable parameters, outstanding robustness, high damage threshold and the like, and sets a foundation for the development of mid-infrared ultrafast mode-locked lasers.

A mid-infrared semiconductor saturable absorber mirror based on InAs/GaSb superlattice comprises a GaSb substrate with an anti-reflection film coated on the lower surface of the GaSb substrate; InAs/GaSb superlattice which has a specific structure and thickness and is arranged on the GaSb substrate; and Bragg reflection film which is arranged on the InAs/GaSb superlattice, wherein Bragg reflection film is composed of multiple pairs of ZnS and YbF.sub.3 film layers with a thickness of ¼ wavelength, and the YbF.sub.3 film layer is connected with the InAs/GaSb superlattice. The device not only has a mid-infrared working range with a broadband operation bandwidth, but also has the advantages of designable parameters, outstanding robustness, high damage threshold and the like, and sets a foundation for the development of mid-infrared ultrafast mode-locked lasers.

Disclosed are a design method, a product and an application of a high-repetition-frequency and multi-wavelength ultrashort pulse mode-locked photonic integrated chip. Components for designing the mode-locked photonic integrated chip include a semiconductor optical amplifier array providing gains for N wavelength channels; a phase delay line array which includes phase delay lines with different lengths and separately compensates for different effective optical path differences of gain light of the wavelength channels caused by a dispersion effect; a flattened arrayed waveguide grating multiplexing the gain light with the effective optical path differences compensated, and multiplexing N-channel optical pulse signals into one-channel optical pulse signal; a saturable absorber forming, with the arrayed waveguide grating, N individual and synchronized different wavelength mode-locked optical pulse channels; and a semiconductor optical amplifier used for gaining and outputting an output pulse of the saturable absorber.

A photonic integrated circuit-based dual frequency comb source, an integrated system for dual comb spectroscopy and corresponding method are disclosed. The dual comb source includes, on a same substrate of the photonic integrated circuit, a first and second semiconductor integrated mode-locked laser, a master laser, and connection arrangement between the master laser and each of the first and second mode-locked laser. The master laser is configured for generating a lasing line for simultaneous optical injection-locking of the first and second mode-locked laser, the first and second mode-locked laser are configured for generating a first and second frequency comb respectively, and the connection arrangement is suitable for coherently transferring lasing light from the master laser to each mode-locked laser. The mode-locked lasers include a gain section and a saturable absorber section to provide mode-locking, and an extended optical cavity formed in the substrate.

A mode locking device is disclosed for altering repetition rate in a mode-locked laser. In an example device, laser light is coupled from a fiber into a cavity through a sliding pigtail collimator with a diameter selected such that it is a close tolerance fit with a female snout on a package. A lens focuses laser light to an appropriate spot size onto a SAM or SESAM, such that back-reflection into the fiber is maximized, A piezoelectric transducer is mounted in cooperation with the SAM or SESAM for cavity tuning.

A mode locking device is disclosed for altering repetition rate in a mode-locked laser. In an example device, laser light is coupled from a fiber into a cavity through a sliding pigtail collimator with a diameter selected such that it is a close tolerance fit with a female snout on a package. A lens focuses laser light to an appropriate spot size onto a SAM or SESAM, such that back-reflection into the fiber is maximized, A piezoelectric transducer is mounted in cooperation with the SAM or SESAM for cavity tuning.