Disclosed is a color emissive LED array having a substantially flat backplane which has circuitry. The color emissive LED array includes a plurality of multi thickness color emissive LED units disposed in an array on the substantially flat backplane; The plurality of multi thickness color emissive LED units have a thickness of the first color emissive LED unit is less than a thickness of the second color emissive LED unit and less than a thickness of the third color emissive LED unit. Meanwhile, the substantially flat backplane having circuitry has one or more anode and one or more cathode. Further, the array is attached to the substantially flat backplane having circuitry by using a jointing layer.

A method to fill the flowable material into the semiconductor assembly module gap regions is described. In an embodiment, multiple semiconductor units are formed on the substrate to create an array module; the array module is attached to a backplane having circuitry to form the semiconductor assembly module in which multiple gap regions are formed inside the semiconductor assembly module and edge gap regions are formed surround an edge of the assembly module; The flowable material is forced inside the gap regions by performing the high acting pressure environment and then cured to be a stable solid to form a robustness structure. A semiconductor convert module is formed by removing the substrate utilizing a substrate removal process. A semiconductor driving module is formed by utilizing a connecting layer on the semiconductor convert module. In one embodiment, a vertical light emitting diode semiconductor driving module is formed to light up the vertical LED array. In another one embodiment, multiple color emissive light emitting diodes semiconductor driving module is formed to display color images. In another embodiment, multiple patterns of semiconductor units having multiple functions semiconductor driving module is formed to provide multiple functions for desire application.

A high air-tightness device is provided with a bottom plate (1), a frame body wall (2) and a shell body cover (3). The materials of said parts are one and more of metal, glass and ceramic, and the junctions among the parts are sealed by extruding a hollow-core metal sealing ring (12) by thread. The device is provided with one and more of a window glass (17), a pipeline (10), a pipeline interface, an openable and closable valve (11), an electrode communicating inside with outside and a threaded opening, and the device is connected and sealed by extruding the hollow-core metal sealing ring using the internal or external threaded part to move straight or rotate; or the device is pre-sealing formed by one and more of a metal solder welding processing technique, a metal welding processing technique, a glass welding processing technique and a sintering ceramic formed processing technique. The materials of each part for isolating inside from outside during the sealing are one and more of metal, glass and ceramic. Vacuum, special gas and liquid can be sealed within the high air-tightness device for a long time. The high air-tightness device is easy to be opened and re-sealed, and has easy maintenance and low cost.

A color emissive LED array comprising a backplane and a plurality of color emissive LED units disposed in an array on the backplane, whereas the thickness of a first color emissive LED unit is less than the thickness of a second color emissive LED unit and less than the thickness of the third color emissive LED unit; wherein the color emissive LED units is formed by at least one of vertical configuration structure or flip chip configuration LED structure.

A semiconductor continuous array layer comprising: an array of multiple semiconductor units; a sidewall of each semiconductor unit is surrounded by a semi-cured material or a cured material connecting the semiconductor units together to form a semiconductor continuous array; wherein multiple voids or air gaps are enclosed by the semi-cured material or the cured material within the semiconductor continuous array or around the edge of the semiconductor continuous array.

A semiconductor continuous array layer comprising: an array of multiple semiconductor units; a sidewall of each semiconductor unit is surrounded by a semi-cured material or a cured material connecting the semiconductor units together to form a semiconductor continuous array; wherein multiple voids or air gaps are enclosed by the semi-cured material or the cured material within the semiconductor continuous array or around the edge of the semiconductor continuous array.

A method to fill the flowable material into the semiconductor assembly module gap regions is described. In an embodiment, multiple semiconductor units are formed on the substrate to create an array module; the array module is attached to a backplane having circuitry to form the semiconductor assembly module in which multiple gap regions are formed inside the semiconductor assembly module and edge gap regions are formed surround an edge of the assembly module; The flowable material is forced inside the gap regions by performing the high acting pressure environment and then cured to be a stable solid to form a robustness structure. A semiconductor convert module is formed by removing the substrate utilizing a substrate removal process. A semiconductor driving module is formed by utilizing a connecting layer on the semiconductor convert module. In one embodiment, a vertical light emitting diode semiconductor driving module is formed to light up the vertical LED array. In another one embodiment, multiple color emissive light emitting diodes semiconductor driving module is formed to display color images. In another embodiment, multiple patterns of semiconductor units having multiple functions semiconductor driving module is formed to provide multiple functions for desire application.