In an embodiment a method includes forming a semiconductor layer sequence on a growth substrate, applying a silicon oxide layer to a surface of the semiconductor layer sequence facing away from the growth substrate, applying a first metal layer to the silicon oxide layer, wherein the first metal layer includes gold, platinum, copper or silver, providing a silicon substrate and applying a second metal layer formed of the same material as the first metal layer to the silicon substrate, bonding the semiconductor layer sequence to the silicon substrate by direct bonding of the first metal layer to the second metal layer, wherein the first metal layer and the second metal layer are brought into contact at a temperature in a range of 150° C. to 400° C. so that they form a metal bonding layer and detaching the growth substrate from the semiconductor layer sequence.

In an embodiment a method includes forming a semiconductor layer sequence on a growth substrate, applying a silicon oxide layer to a surface of the semiconductor layer sequence facing away from the growth substrate, applying a first metal layer to the silicon oxide layer, wherein the first metal layer includes gold, platinum, copper or silver, providing a silicon substrate and applying a second metal layer formed of the same material as the first metal layer to the silicon substrate, bonding the semiconductor layer sequence to the silicon substrate by direct bonding of the first metal layer to the second metal layer, wherein the first metal layer and the second metal layer are brought into contact at a temperature in a range of 150° C. to 400° C. so that they form a metal bonding layer and detaching the growth substrate from the semiconductor layer sequence.

A support structure for mounting an optical assembly above an optoelectronic device, the optical assembly comprising an electrically conductive structure, the support structure comprising: a first surface for supporting an optical assembly; and an electrically conductive lead, wherein said electrically conductive lead comprises: a first electrical interface portion adjacent to the first surface for forming an electrical contact with an electrically conductive structure of an optical assembly supported by the first surface; a second electrical interface portion on a side opposing the first surface, and wherein the electrically conductive lead extends from the first electrical interface portion to the second electrical interface portion so as to maintain an optical assembly supported on the first surface and the second electrical interface portion in electrical contact.

A support structure for mounting an optical assembly above an optoelectronic device, the optical assembly comprising an electrically conductive structure, the support structure comprising: a first surface for supporting an optical assembly; and an electrically conductive lead, wherein said electrically conductive lead comprises: a first electrical interface portion adjacent to the first surface for forming an electrical contact with an electrically conductive structure of an optical assembly supported by the first surface; a second electrical interface portion on a side opposing the first surface, and wherein the electrically conductive lead extends from the first electrical interface portion to the second electrical interface portion so as to maintain an optical assembly supported on the first surface and the second electrical interface portion in electrical contact.

A light-emitting device includes: a plurality of semiconductor laser elements; a package having a hermetically sealed space, with the plurality of semiconductor laser elements arranged in the space; an optical member fixed to the package; and a plurality of adhesives including a first adhesive and a second adhesive fixing the optical member to the package. The plurality of adhesives are bonded to the optical member between an emission surface of the package and an incidence surface or a lower surface of the optical member. In the optical member, one or more first bonding regions to which the first adhesive is bonded and one or more second bonding regions to which the second adhesive is bonded are located at positions that are closer to the incidence surface of the optical member than to an emission surface of the optical member.

A light-emitting device includes: a plurality of semiconductor laser elements; a package having a hermetically sealed space, with the plurality of semiconductor laser elements arranged in the space; an optical member fixed to the package; and a plurality of adhesives including a first adhesive and a second adhesive fixing the optical member to the package. The plurality of adhesives are bonded to the optical member between an emission surface of the package and an incidence surface or a lower surface of the optical member. In the optical member, one or more first bonding regions to which the first adhesive is bonded and one or more second bonding regions to which the second adhesive is bonded are located at positions that are closer to the incidence surface of the optical member than to an emission surface of the optical member.

First block (10) and second block (20) are placed on top of each other with insulation sheet (45) interposed therebetween. First adherend surface (12) and second adherend surface (22) are provided on a facing surface of first block (10) and a facing surface of second block (20), respectively. Adhesive (50) is applied to first adherend surface (12) and second adherend surface (22). First block (10) and second block (20) are bonded to each other with adhesive (50).

A method for the production of a diode laser having a laser bar, wherein a metal layer having raised areas is used which is located between the n-side of the laser bar and the cover. The metal layer can be plastically deformed during installation without volume compression in the solid physical state. As a result the laser module can be reliably installed and a slight deviation (smile value) of the emitters from a centre line is achieved.

A semiconductor radiation source includes at least one semiconductor chip that generates radiation; and at least one capacitor body, wherein the semiconductor chip and the capacitor body are stacked on top of each other, the semiconductor chip directly electrically connects in a planar manner to the capacitor body, the semiconductor chip is a ridge waveguide laser, and a ridge waveguide of the semiconductor chip is arranged on a side of the semiconductor chip facing away from the capacitor body.

A semiconductor radiation source includes at least one semiconductor chip that generates radiation; and at least one capacitor body, wherein the semiconductor chip and the capacitor body are stacked on top of each other, the semiconductor chip directly electrically connects in a planar manner to the capacitor body, the semiconductor chip is a ridge waveguide laser, and a ridge waveguide of the semiconductor chip is arranged on a side of the semiconductor chip facing away from the capacitor body.