To provide a light-emitting apparatus capable of shaping light from a plurality of light-emitting elements into light with a plurality of shapes and a manufacturing method thereof. A light-emitting apparatus according to the present disclosure, including: a substrate; a plurality of light-emitting elements which are provided on a side of a first surface of the substrate; and a plurality of first lenses which are provided on a side of a second surface of the substrate and on which light emitted from the plurality of light-emitting elements is incident, wherein the plurality of first lenses include at least two types of lenses among a concave lens, a convex lens, and a flat lens.

A low numerical aperture fiber output diode laser module, which having several independent diode lasers, and collimated and converged the light beam, for the coupling the light to the core optical fiber with a core diameter of 105 um and a numerical aperture of 0.12. Compared with general products with a numerical aperture of 0.22, the light output angle is reduced to 55%, and use a general blue laser diode for verification. Use an optical software for facilitating the design and optimization of the parameters of the optical lens module.

The invention relates to a radiation-emitting semiconductor chip, having: a semiconductor body comprising an active region which is designed to generate electromagnetic radiation; a resonator which comprises a first end region and a second end region; and at least one cut-out in the semiconductor body, said cut-out passing completely through the active region, wherein: the active region is situated in the resonator, and the cut-out defines a reflectivity for the electromagnetic radiation. The invention also relates to a radiation-emitting semiconductor component, a method for producing a radiation-emitting semiconductor chip, and a method for producing radiation-emitting semiconductor components.

A light-emitting device is provided. The light-emitting device is configured to emit a radiation and comprises: a substrate; an epitaxial structure on the substrate and comprising a first DBR stack, a light-emitting stack and a second DBR stack and a contact layer in sequence; an electrode; a current blocking layer between the contact layer and the electrode; a first opening formed in the current blocking layer; and a second opening formed in the electrode and within the first opening; wherein a part of the electrode fills in the first opening and contacts the contact layer; and the light-emitting device is devoid of an oxidized layer and an ion implanted layer in the second DBR stack.

An optoelectronic device includes a semiconductor substrate having first and second faces. An emitter is disposed on the first face of the semiconductor substrate and is configured to emit a beam of radiation through the substrate. At least one curved optical surface is formed in the second face of the semiconductor substrate. A first reflector is disposed on the first face in proximity to the emitter, and a second reflector is disposed on the second face in proximity to the curved optical surface, such that the second reflector reflects the beam that was emitted through the semiconductor substrate by the emitter to reflect back through the semiconductor substrate toward the first reflector, which then reflects the beam to pass through the semiconductor substrate so as to exit from the semiconductor substrate through the curved optical surface.

A quantum cascade laser includes a laser structure having an output face for emitting laser light in a first direction; and a lens having an entrance surface and a convex surface, the entrance surface receiving the laser light from the output face, and the convex surface emitting the laser light after being condensed by the lens. The laser structure includes a semiconductor substrate and a mesa waveguide provided on a first region of a principal surface of the semiconductor substrate, the mesa waveguide extending in the first direction. The lens includes a semiconductor and is provided on a second region of the principal surface of the semiconductor substrate. The first region and the second region are arranged in the first direction.

A surface-emitting semiconductor laser includes a first-conductivity-type layer, an active layer, and a second-conductivity-type layer. The active layer and the second-conductivity-type layer are electrically connected in a current constriction layer through an opening. The surface-emitting semiconductor laser further includes an insulating layer that has translucency with respect to an emission wavelength of the active layer, a first electrode electrically connected to the first-conductivity-type layer, and a second electrode electrically connected to the second-conductivity-type layer. In the surface-emitting semiconductor laser, a part of the insulating layer is exposed from the second electrode, and the insulating layer exposed from the second electrode includes a first portion that has a first thickness and a second portion that has a second thickness to make output of light emitted from the active layer smaller than the first portion in comparison with the first thickness and that surrounds the first portion.

The present embodiment relates to a semiconductor light-emitting element or the like including a structure for suppressing deterioration in the quality of an optical image caused by an electrode blocking a part of light outputted from a phase modulation layer. The semiconductor light-emitting element includes a phase modulation layer having a basic layer and a plurality of modified refractive index regions, and the phase modulation layer includes a first region at least partially overlapping the electrode along a lamination direction and a second region other than the first region. Among the plurality of modified refractive index regions, only one or more modified refractive index regions in the second region are disposed so as to contribute to formation of an optical image.

The present embodiment relates to a light-emitting device comprising a reflective metasurface modulating a phase for each of pixels constituting a one- or two-dimensional array. The light-emitting device comprises a surface emitting laser element, a light guide layer, and the metasurface. The metasurface has a light transmissive layer including a dielectric layer, one metal film on one surface thereof, and the other metal film on the other surface thereof. In each of unit regions corresponding to the pixels, the light transmissive layer includes a portion exposed without being covered with the metal film. The width of each unit region and the thickness of the light transmissive layer are smaller than the wavelength of the laser light to the metasurface. The metasurface modulates the phase of the laser light for each unit region. A first light output surface outputs the modulated laser.

A light emitting device includes a substrate; a semiconductor light emitting element provided on the substrate; a mirror that is formed on the substrate and reflects light emitted by the semiconductor light emitting element; a first resin disposed apart from the semiconductor light emitting element on an optical path and containing a light diffusing material; and a second resin disposed on the optical path between the semiconductor light emitting element and the low light diffusion portion and covering a light emitting surface of the semiconductor light emitting element at least in a region in which a density of the light is highest. A concentration of a light diffusing material in the second resin is lower than a concentration of the light diffusing material in the first resin.