A high Q whispering gallery mode resonator with ion-implanted voids is described. A resonator device includes a resonator disk formed of an electrooptic material. The resonator disk includes a top surface, a bottom surface substantially parallel to the top surface, and a side structure between the top surface and the bottom surface. The side structure includes an axial surface along a perimeter of the resonator disk, where a midplane passes through the axial surface dividing the axial surface into symmetrical halves. The whispering gallery mode resonator disk includes voids localized at a particular depth from the top surface. At least one of the voids localized at the particular depth from the top surface is located at an outer extremity towards the perimeter of the resonator disk. The resonator device can further include a first electrode on the top surface and a second electrode on the bottom surface.

A semiconductor disk chip includes a cap layer having at least one structured region for mode selection, a periodic gain structure, a Distributed Bragg reflector, and a substrate. The structured region is structured in such a way that a lateral fundamental mode of the laser radiation experiences lower losses than radiation of higher laser modes and includes at least one trench extending into the cap layer to a depth not greater than a thickness of the cap layer, and wherein the depth decreases from an outer region of an emission surface of the semiconductor chip in a direction of an inner of the emission surface of the semiconductor chip.

The present invention relates to evanescently coupling whispering gallery mode optical resonators having a liquid coupling as well as methods of making and using same. The aforementioned evanescently coupling whispering gallery mode optical resonators having a liquid couplings provide increased tunability and sensing selectivity over current same. The aforementioned. Applicants' method of making evanescent-wave coupled optical resonators can be achieved while having coupling gap dimensions that can be fabricated using standard photolithography. Thus economic, rapid, and mass production of coupled WGM resonators-based lasers, sensors, and signal processors for a broad range of applications can be realized.

A single-mode micro-laser based on a single whispering gallery mode optical microcavity and a preparation method thereof described includes: preparing a desired single whispering gallery mode optical microcavity doped with rare earth ions or containing a gain material such as quantum dots, wherein an optical microcavity configuration include a micro-disk cavity, a ring-shaped microcavity, and a racetrack-shaped microcavity; a material type include lithium niobate, silicon dioxide, silicon nitride, etc.; preparing an optical fiber cone or an optical waveguide of a required size which can excite high-order modes of the optical microcavity, such as a ridge waveguide and a circular waveguides; and coupling, integrating, and packaging the optical fiber cone or the optical waveguide with the microcavity. A pump light is coupled to the optical fiber cone or the optical waveguide to excite a compound mode with a polygonal configuration.

The semiconductor laser diode includes a semiconductor layer sequence having an active zone. The semiconductor layer sequence has a shape of a generalized cylinder or a frustum, and a main axis of the semiconductor layer sequence is perpendicular to a main extension plane of the semiconductor layer sequence. The semiconductor layer sequence has a core region and an edge region directly adjacent to the core region. The main axis passes through the core region. The edge region borders the core region in directions perpendicular to the main axis. The semiconductor layer sequence has a larger refractive index in the core region than in the edge region.

The present invention relates to evanescently coupling whispering gallery mode optical resonators having a liquid coupling as well as methods of making and using same. The aforementioned evanescently coupling whispering gallery mode optical resonators having a liquid couplings provide increased tunability and sensing selectivity over current same. The aforementioned. Applicants' method of making evanescent-wave coupled optical resonators can be achieved while having coupling gap dimensions that can be fabricated using standard photolithography. Thus economic, rapid, and mass production of coupled WGM resonators-based lasers, sensors, and signal processors for a broad range of applications can be realized.

An optical integrated device may include a substrate, a first laser diode oscillating in a transverse magnetic mode (TM mode) on the substrate, and a second laser diode oscillating in a transverse electric mode (TE mode) on the substrate, wherein the first laser diode includes a first body in a shape of a disk, and through holes penetrating the first body.

The present invention provides one or more injection-lockable whistle-geometry semiconductor ring lasers, which may be cascaded, that are integrated on a common silicon-on-insulator (SOI) substrate with a single-frequency semiconductor master laser, wherein the light output from the semiconductor master laser is used to injection-lock the first of the semiconductor ring lasers. The ring lasers can be operated in strongly injection-locked mode, while at least one of them is subjected to direct injection current modulation.

The present invention relates to a method for obtaining an n-type doped metal chalcogenide quantum dot solid-state element with optical gain for low-threshold, band-edge amplified spontaneous emission (ASE), comprising: —forming a metal chalcogenide quantum dot solid-state element, and —carrying out an n-doping process on its metal chalcogenide quantum dots to at least partially bleach its band-edge absorption, which comprises: —a partial substitution of chalcogen atoms by halogen atoms, in the metal chalcogenide quantum dots, and/or —a partial aliovalent-cation substitution of bivalent metal cations by trivalent cations, in the metal chalcogenide quantum dots; and —providing a substance on the metal chalcogenide quantum dots, to avoid oxygen p-doping. The present invention also relates to the obtained n-type doped metal chalcogenide quantum dot solid-state element, a method for obtaining a light emitter with that n-type doped metal chalcogenide quantum dot solid-state element, and the obtained light emitter.

A method for numerical control milling, forming and polishing of a large-diameter aspheric lens to solve long time-consuming and severe tool wear in the machining of a meter-scale large-diameter aspheric surface is disclosed. An aspheric surface is discretized into a series of rings with different radii, and the rings are sequentially machined through generating cutting by using an annular grinding wheel tool; the rings are equally spaced, there are a total of N rings, and the width of any ring is jointly determined by the N.sup.th ring, the (N-1)th ring, positioning accuracy, and a generatrix equation of the aspheric lens, and the n.sup.th ring has a curvature radius of Rn =sqrt(R0.sup.2-k*(n*dx).sup.2); and the aspheric surface is enveloped by a large number of rings. The tool used for machining has a diameter greater than the semi-diameter of the aspheric surface, and contact area between tool and workpiece surface is rings.