Disclosed in the present invention are a laser chip and a preparation method therefor. Said method comprises: providing a laser epitaxial structure, the laser epitaxial structure comprising an active layer, and a cladding layer and a contact layer which are sequentially stacked on the active layer; covering a first mask layer on the contact layer, and a photolithograph step is performed on the first mask layer to form a first window region; performing primary etching on the contact layer by means of the first window region, so as to form a second window region corresponding to the first window region and exposing the cladding layer; performing zinc diffusion on the cladding layer and the active layer by means of the first window region and the second window region; removing the first mask layer; covering a second mask layer on the contact layer, and a photolithograph step is performed on the second mask layer to form a third window region, the projection of the third window region on the contact layer being located at the periphery of the second window region; and performing secondary etching on the contact layer by means of the third window region, so as to enlarge the second window region to correspond to the third window region. The described method can effectively increase a catastrophic optical mirror damage threshold.

Disclosed in the present invention are a laser chip and a preparation method therefor. Said method comprises: providing a laser epitaxial structure, the laser epitaxial structure comprising an active layer, and a cladding layer and a contact layer which are sequentially stacked on the active layer; covering a first mask layer on the contact layer, and a photolithograph step is performed on the first mask layer to form a first window region; performing primary etching on the contact layer by means of the first window region, so as to form a second window region corresponding to the first window region and exposing the cladding layer; performing zinc diffusion on the cladding layer and the active layer by means of the first window region and the second window region; removing the first mask layer; covering a second mask layer on the contact layer, and a photolithograph step is performed on the second mask layer to form a third window region, the projection of the third window region on the contact layer being located at the periphery of the second window region; and performing secondary etching on the contact layer by means of the third window region, so as to enlarge the second window region to correspond to the third window region. The described method can effectively increase a catastrophic optical mirror damage threshold.

The present disclosure relates to index guided semiconductor laser devices supporting wide single lateral mode operation for high power operation. A narrow channel ridge waveguide structure is presented which devices can be configured as single lateral multi-spectral high power semiconductor lasers, single frequency lasers, gain chips and semiconductor amplifiers. More specifically it relates to a means for increasing the lateral mode size over that of conventional index guided structures to increase the average output power typically limed by Catastrophic Optical Damage (COD) at the laser facet or by intensity related effects. This potentially allows the overall laser cavity length to be shortened for a given output power level to stabilize frequency locking with internal or external gratings to improve single frequency operation.

A semiconductor laser is provided that includes a semiconductor layer sequence and electrical contact surfaces. The semiconductor layer sequence includes a waveguide with an active zone. Furthermore, the semiconductor layer sequence includes a first and a second cladding layer, between which the waveguide is located. At least one oblique facet is formed on the semiconductor layer sequence, which has an angle of 45° to a resonator axis with a tolerance of at most 10°. This facet forms a reflection surface towards the first cladding layer for laser radiation generated during operation. A maximum thickness of the first cladding layer is between 0.5 M/n and 10 M/n at least in a radiation passage region, wherein n is the average refractive index of the first cladding layer and M is the vacuum wavelength of maximum intensity of the laser radiation.

An on-chip integrated semiconductor laser structure and a method for preparing the same. The structure includes: an epitaxial structure including a first N contact layer, a first N confinement layer, a first active region, a first P confinement layer, a first P contact layer, an isolation layer, a second N contact layer, a second N confinement layer, a second active region, a second P confinement layer, and a second P contact layer sequentially deposited on a substrate; a first waveguide and a second waveguide; a first optical grating and a second optical grating; and current injection windows.

Semiconductor light emitting device includes semiconductor light emitting element and submount that includes mounting surface, semiconductor light emitting element includes: semiconductor multilayer structure that includes opposite surface opposite mounting surface and emission surface; and mounting electrode that is arranged on opposite surface and extends in a direction of emission of light, emission surface is located outside of an end portion of mounting surface, groove is formed in opposite surface of semiconductor multilayer structure to extend along mounting electrode in the direction of emission, and a first distance between emission surface and groove is greater than zero and less than a second distance between emission surface and mounting surface.

A semiconductor laser comprises: a semiconductor substrate; a semiconductor structure part that is formed on the substrate; a surface electrode formed on the structure part opposite to the substrate; and a conductive member formed on the surface electrode opposite to the substrate. The conductive member is such that part of or the whole of a side face thereof on an emission facet side, the side face being one side face in an x-direction parallel to an extending direction of an active layer, is formed to be away from an emission facet in the structure part toward a side of the other facet opposed to the emission facet in the x-direction. In the semiconductor laser, a receding portion is formed such that at least part of the conductive member recedes toward the side of the other facet in the x-direction from the emission facet.

A semiconductor laser device includes a semiconductor layer portion having an active layer and performs multi-mode oscillation of laser light. Further, the semiconductor layer portion includes first and second regions, the second region being located closer to a facet on a laser light radiation side than the first region, the first region and the second region include a stripe region in which the laser light is guided, and an optical confinement effect of the laser light to the stripe region in a horizontal direction in the second region is less than that in the first region.

A multi-terraced structure includes three or more sections with different thicknesses and adjacent to each other in a direction in which an optical waveguide extends. An adjacent pair of the three or more sections includes one section smaller in thickness and closer to an end face of the semiconductor multilayers and another section larger in thickness and farther from the end face of the semiconductor multilayers. The three or more sections include: a first section with a smallest thickness, including the lowermost layer; a second section adjacent to the first section, including the lowermost layer and additionally a stress relief layer composed of a material equal to or lower than Au in Young's modulus; and a third section with a largest thickness, including all layers from the uppermost layer to the lowermost layer.

The present technology can be used to control the current injection profile in the longitudinal direction of a high-power diode laser in order to optimize current densities as a function of position in the cavity to promote higher reliable output power and increase the electrical to optical conversion efficiency of the device beyond the level which can be achieved without application of this technique. This approach can be utilized, e.g., in the fabrication of semiconductor laser chips to improve the output power and wall plug efficiency for applications requiring improved performance operation.