A method for controlling a power conversion system includes: configuring a carrier period of the power modules, and configuring a phase shift of carrier waves of the adjacent power modules to be 2π/N; selecting M power modules to operate within the carrier period, where O≤M≤N, and providing a modulation wave to the power modules, an amplitude of the modulation wave being A/N of a carrier peak of the carrier waves; and comparing the value of the modulation wave with a value of the carrier wave of each of the power modules, respectively, wherein, when the value of the modulation wave is greater than the value of the carrier wave, the corresponding power module runs; when the value of the modulation wave is less than or equal to the value of the carrier wave, the corresponding power module stops.

A circuit includes two thyristors coupled in anti-series. An AC capacitor has first and second electrodes respectively coupled to two different electrodes of the two thyristors. The first and second electrodes are coupled to receive an AC voltage. A control circuit detects discontinuance of application of the AC voltage to the AC capacitor and in response thereto simultaneously applies same gate currents to the two thyristors. A current path through the two thyristors (one passing current in forward mode and the other in reverse mode) discharges a residual voltage stored on the AC capacitor.

A circuit includes two thyristors coupled in anti-series. An AC capacitor has first and second electrodes respectively coupled to two different electrodes of the two thyristors. The first and second electrodes are coupled to receive an AC voltage. A control circuit detects discontinuance of application of the AC voltage to the AC capacitor and in response thereto simultaneously applies same gate currents to the two thyristors. A current path through the two thyristors (one passing current in forward mode and the other in reverse mode) discharges a residual voltage stored on the AC capacitor.

A rectifier for use in a power supply is provided, including a capacitor charge control circuit operable to enable reduction in bulk capacitance.

A two-wire load control device (such as, a dimmer switch) for controlling the amount of power delivered from an AC power source to an electrical load (such as, a high-efficiency lighting load) includes a thyristor coupled between the source and the load, a gate coupling circuit coupled between a first main load terminal and the gate of the thyristor, and a control circuit coupled to a control input of the gate coupling circuit. The control circuit generates a drive voltage for causing the gate coupling circuit to conduct a gate current to thus render the thyristor conductive at a firing time during a half cycle of the AC power source, and to allow the gate coupling circuit to conduct the gate current at any time from the firing time through approximately the remainder of the half cycle, where the gate coupling circuit conducts approximately no net average current to render and maintain the thyristor conductive.

A method for generating an inductive reactive power for a public grid by an electrical load apparatus, in which, in a first operating mode of the electrical load apparatus, an alternating current of the public grid is transformed by a transformer device and the transformed alternating current is provided for an electrical load of the electrical load apparatus. In a second operating mode of the electrical load apparatus that is different from the first operating mode, the transformer device is short-circuited in a phase-controlled manner by a switching device of the electrical load apparatus, wherein the switching device is phase-controlled such that, depending on a phase angle of the phase control of the switching device by the transformed alternating current, the inductive reactive power for the public grid is generated by the switching device.

The present disclosure provides a nitride-based bidirectional switching device with substrate potential management capability. The device has a control node, a first power/load node, a second power/load node and a main substrate, and comprises: a nitride-based bilateral transistor and a substrate potential management circuit configured for managing a potential of the main substrate. By implementing the substrate potential management circuit, the substrate potential can be stabilized to a lower one of the potentials of the first source/drain and the second source/drain of the bilateral transistor no matter in which directions the bidirectional switching device is operated. Therefore, the bilateral transistor can be operated with a stable substrate potential for conducting current in both directions.

The present disclosure provides a nitride-based bidirectional switching device with substrate potential management capability. The device has a control node, a first power/load node, a second power/load node and a main substrate, and comprises: a nitride-based bilateral transistor and a substrate potential management circuit configured for managing a potential of the main substrate. By implementing the substrate potential management circuit, the substrate potential can be stabilized to a lower one of the potentials of the first source/drain and the second source/drain of the bilateral transistor no matter in which directions the bidirectional switching device is operated. Therefore, the bilateral transistor can be operated with a stable substrate potential for conducting current in both directions.

A capacitive element has its terminals coupled together by two thyristors electrically in antiparallel. The discharge of the capacitive element is controlled by the application of a gate current to one thyristor of the two thyristors which is in a reverse-biased state in response to a voltage stored across the terminals of the capacitive element. The reverse-biased thyristor responds to the applied gate current by passing a leakage current to discharge the stored voltage.

A capacitive element has its terminals coupled together by two thyristors electrically in antiparallel. The discharge of the capacitive element is controlled by the application of a gate current to one thyristor of the two thyristors which is in a reverse-biased state in response to a voltage stored across the terminals of the capacitive element. The reverse-biased thyristor responds to the applied gate current by passing a leakage current to discharge the stored voltage.