In a preamplifier (amplifier) for the radiation detector, an interconnection layer connected to the bonding pad forms one electrode of a feedback capacitor. Since there is no wiring for connecting the bonding pad and capacitor, a parasitic capacitance caused by the wiring will not be generated. Moreover, the capacitor is arranged below the bonding pad with a conductive layer serving as the other electrode, so that the feedback capacitance of the capacitor is included in the parasitic capacitance between the interconnection layer and the substrate. Compared to the conventional case, an amount of capacitance corresponding to the parasitic capacitance caused by wiring and the feedback capacitance for the capacitor is reduced from the input capacitance. Thus, the input capacitance for the amplifying circuit is reduced.

Low-leakage switch circuit techniques to reduce leakage current of an off-state switch, while maintaining a low on-resistance. The low-leakage switch circuit may allow measurement of low current signals in a transimpedance amplifier with improved accuracy without, the need for calibration. The low-leakage switch circuit may include a bootstrapping path connecting two or more terminals or voltage nodes of an off-state switch in the switch circuit. The bootstrapping path is configured to bootstrap major leakage current contributors in the switch circuit, such as the substrate diode leakage, the subthreshold leakage, or combinations thereof.

The present application discloses an amplifier circuit, a chip and an electronic device, which generates a positive output signal and a negative output signal according to a positive input signal and a negative input signal, wherein the positive input signal and the negative input signal have a corresponding input differential-mode voltage and input common-mode voltage, and the positive output signal and the negative output signal have a corresponding output differential-mode voltage and output common-mode voltage, and the amplifier circuit includes: an amplifying unit, configured to receive the positive input signal and the negative input signal and generate the positive output signal and the negative output signal; and an attenuation unit, including: a positive common-mode capacitor and a negative common-mode capacitor, configured to attenuate the input common-mode voltage below a first specific frequency.

An integrator for use with a current sensor provides a feedback loop reducing drift while maintaining wide bandwidth.

To provide a semiconductor device that makes it possible to reduce a cell circuit area and an increase in resolution. There is provided a semiconductor device including: a first region in which readout cells are arranged in an array form, the readout cells having one of input transistors included in a differential amplifier: and a second region in which reference cells are arranged in an array form, the reference cells having another input transistor included in the differential amplifier, the first region and the second region being separated from each other.

Numerous embodiments of analog neural memory arrays are disclosed. In one embodiment, an analog neural memory system comprises an array of non-volatile memory cells, wherein the cells are arranged in rows and columns, the columns arranged in physically adjacent pairs of columns, wherein within each adjacent pair one column in the adjacent pair comprises cells storing W+ values and one column in the adjacent pair comprises cells storing W− values, wherein adjacent cells in the adjacent pair store a differential weight, W, according to the formula W=(W+)−(W−). In another embodiment, an analog neural memory system comprises a first array of non-volatile memory cells storing W+ values and a second array storing W− values.

A circuit chip with power supply noise rejection includes a switch unit, an energy storage unit, and an operating circuit. The switch unit has a first connection terminal and a second connection terminal. The first connection terminal is adapted to receive a power supply voltage. The switch unit is configured to selectively turn on a first connection path between the first connection terminal and the second connection terminal according to a clock signal. The energy storage unit is coupled to the second connection terminal. When the switch unit turns on the first connection path, the energy storage unit is configured to generate a storage voltage on the second connection terminal according to the power supply voltage. The operating circuit is coupled to the second connection terminal, and the operating circuit is configured to operate according to the storage voltage.

In some embodiments, a circuit includes a first amplifier, a second amplifier, and a counter. The first amplifier operates based on a first power supply voltage and generates a first output signal by comparing a ramp signal and a reset signal of a pixel signal output from a pixel array during a first operation period and comparing the ramp signal and an image signal of the pixel signal output from the pixel array during a second operation period. The second amplifier operates based on the first power supply voltage, generates a second output signal based on the first output signal and adjust a voltage level of the second output signal from a low level to a third level. The counter operates based on a second power supply voltage, counts pulses of the second output signal, and outputs a counting result as a digital signal.

Numerous embodiments of analog neural memory arrays are disclosed. In one embodiment, a system comprises a first array of non-volatile memory cells, wherein the cells are arranged in rows and columns and the non-volatile memory cells in one or more of the columns stores W+ values, and wherein one of the columns in the first array is a dummy column; and a second array of non-volatile memory cells, wherein the cells are arranged in rows and columns and the non-volatile memory cells in one or more of the columns stores W− values, and wherein one of the columns in the second array is a dummy column; wherein pairs of cells from the first array and the second array store a differential weight, W, according to the formula W=(W+)−(W−).

A pixel circuit includes a differential amplifier. The differential amplifier includes a non-inverting input terminal, an inverting input terminal, and an output terminal. The differential amplifier includes an input differential pair including first and second NMOS transistors, a current mirror pair including PMOS transistors, and a constant current source including a fifth NMOS transistor. A threshold voltage of each of the first and second NMOS transistors is higher than a threshold voltage of the fifth NMOS transistor. Further, the threshold voltage of each of the first and second NMOS transistors is higher than a threshold voltage of another NMOS transistor.