Provided is a bias circuit that supplies a first bias current or voltage to an amplifier that amplifies a radio frequency signal. The bias circuit includes: an FET that has a power supply voltage supplied to a drain thereof and that outputs the first bias current or voltage from a source thereof; a first bipolar transistor that has a collector thereof connected to a gate of the FET, that has a base thereof connected to the source of the FET, that has a common emitter and that has a constant current supplied to the collector thereof; and a first capacitor that has one end thereof connected to the collector of the first bipolar transistor and that suppresses variations in a collector voltage of the first bipolar transistor.

An apparatus includes a low noise amplifier (LNA) multiplexer configured to receive a plurality of radio frequency (RF) signals at a plurality of input terminals and to combine the plurality of RF signals into a combined RF signal that is output at an output terminal. The LNA multiplexer includes a plurality of input signal paths, and each input signal path is coupleable to a respective input terminal of the plurality of input terminals and is configured to receive a respective RF signal of the plurality of RF signals. The apparatus further includes an LNA demultiplexer configured to receive the combined RF signal at an input port coupled to the output terminal and to distribute the combined RF signal to a plurality of output ports, each output port of the plurality of output ports configured to output the combined RF signal to a respective downconverter of a plurality of downconverters.

An apparatus includes a low noise amplifier (LNA) multiplexer configured to receive a plurality of radio frequency (RF) signals at a plurality of input terminals and to combine the plurality of RF signals into a combined RF signal that is output at an output terminal. The LNA multiplexer includes a plurality of input signal paths, and each input signal path is coupleable to a respective input terminal of the plurality of input terminals and is configured to receive a respective RF signal of the plurality of RF signals. The apparatus further includes an LNA demultiplexer configured to receive the combined RF signal at an input port coupled to the output terminal and to distribute the combined RF signal to a plurality of output ports, each output port of the plurality of output ports configured to output the combined RF signal to a respective downconverter of a plurality of downconverters.

Dual gate FD-SOI transistors are used as MOSFET capacitors to replace passive well capacitors in analog microcircuits. Use of the dual gate FD-SOI devices helps to reduce unstable oscillations and improve circuit performance. A thick buried oxide layer within the substrate of an FD-SOI transistor forms a capacitive dielectric that can sustain high operating voltages in the range of 1.2 V-3.3 V, above the transistor threshold voltage. A secondary gate in the FD-SOI transistor is used to create a channel from the back side so that even when the bias voltage on the first gate is small, the effective capacitance remains higher. The capacitance of the buried oxide layer is further utilized as a decoupling capacitor between supply and ground. In one example, a dual gate PMOS FD-SOI transistor is coupled to an operational amplifier and a high voltage output driver to produce a precision-controlled voltage reference generator. In another example, two dual gate PMOS and one dual gate NMOS FD-SOI transistor are coupled to a charge pump, a phase frequency detector, and a current-controlled oscillator to produce a high-performance phase locked loop circuit in which the decoupling capacitor footprint is smaller, in comparison to the conventional usage of passive well capacitance.

Dual gate FD-SOI transistors are used as MOSFET capacitors to replace passive well capacitors in analog microcircuits. Use of the dual gate FD-SOI devices helps to reduce unstable oscillations and improve circuit performance. A thick buried oxide layer within the substrate of an FD-SOI transistor forms a capacitive dielectric that can sustain high operating voltages in the range of 1.2 V-3.3 V, above the transistor threshold voltage. A secondary gate in the FD-SOI transistor is used to create a channel from the back side so that even when the bias voltage on the first gate is small, the effective capacitance remains higher. The capacitance of the buried oxide layer is further utilized as a decoupling capacitor between supply and ground. In one example, a dual gate PMOS FD-SOI transistor is coupled to an operational amplifier and a high voltage output driver to produce a precision-controlled voltage reference generator. In another example, two dual gate PMOS and one dual gate NMOS FD-SOI transistor are coupled to a charge pump, a phase frequency detector, and a current-controlled oscillator to produce a high-performance phase locked loop circuit in which the decoupling capacitor footprint is smaller, in comparison to the conventional usage of passive well capacitance.

Various aspects of the present disclosure generally relate to wireless communication. A wireless communication device may have an apparatus that aligns the non-linearity between transmit chains of the wireless communication device that are driven by the same digital port. The apparatus may adjust an amplification power out or an amplification saturated power to adjust a ratio between the amplification saturated power and the amplification power out for one or more transmit chains of the wireless communication device. The apparatus may adjust the ratios of transmit chains to align the ratios of the transmit chains for more consistent management of non-linear characteristics of the chain components. Numerous other aspects are described.

An embodiment of a Doherty amplifier module includes a substrate, an RF signal splitter, a carrier amplifier die, and a peaking amplifier die. The RF signal splitter divides an input RF signal into first and second input RF signals, and conveys the first and second input RF signals to first and second splitter output terminals. The carrier amplifier die includes one or more first power transistors configured to amplify, along a carrier signal path, the first input RF signal to produce an amplified first RF signal. The peaking amplifier die includes one or more second power transistors configured to amplify, along a peaking signal path, the second input RF signal to produce an amplified second RF signal. The carrier and peaking amplifier die are coupled to the substrate so that the RF signal paths through the carrier and peaking amplifier die extend in substantially different (e.g., orthogonal) directions.

An embodiment of a Doherty amplifier module includes a substrate, an RF signal splitter, a carrier amplifier die, and a peaking amplifier die. The RF signal splitter divides an input RF signal into first and second input RF signals, and conveys the first and second input RF signals to first and second splitter output terminals. The carrier amplifier die includes one or more first power transistors configured to amplify, along a carrier signal path, the first input RF signal to produce an amplified first RF signal. The peaking amplifier die includes one or more second power transistors configured to amplify, along a peaking signal path, the second input RF signal to produce an amplified second RF signal. The carrier and peaking amplifier die are coupled to the substrate so that the RF signal paths through the carrier and peaking amplifier die extend in substantially different (e.g., orthogonal) directions.

Circuits, devices and methods related to antenna tuner. In some embodiments, an antenna can be tuned by amplifying a signal for transmission by operating a transistor with a base current, and monitoring the base current. The method can further include adjusting an antenna tuner to thereby adjust an antenna load impedance presented to the amplified signal, with the adjustment being based on a variation of the monitored base current.

An amplification circuit includes: a power supply terminal that is connected to a power supply; a transistor that has a source terminal, a drain terminal, and a gate terminal to which a high-frequency signal is input; a transistor that has a source terminal that is connected to the drain terminal, a drain terminal that outputs a high-frequency signal, and a gate terminal that is grounded; a capacitor that is serially disposed on a second path that connects the gate terminal and the power supply terminal to each other; and a switch that is serially disposed on a first path or the second path. The drain terminal and the gate terminal are connected to each other via the switch and the capacitor.