Aspects of the disclosure relate to a radio frequency phase shifter. An example includes an amplification stage to produce an amplified voltage, the amplification stage having a first amplifier with a first input coupled to a first output of a hybrid coupler and a second amplifier with a complementary second input coupled to a complementary second output of the hybrid coupler. A vector modulation stage coupled to the amplification stage receives the amplified voltage and produces a modulated vector, the vector modulation stage has an in-phase section and a quadrature section to control the phase of the modulated vector in response to a phase control signal. A varactor coupled across the first input and the second input of the amplification stage adjusts the capacitance between the first input and the second input in response to a capacitance control signal.

Disclosed are a receiver control circuit and a terminal. The receiver control circuit includes: a smart power amplifier module, a coder-decoder, and a receiver. The smart power amplifier module is electrically connected to the receiver by a first switch module. The first switch module includes a first switch component unit that is formed by a metal oxide semiconductor field-effect transistor (MOSFET). The first switch module further includes a first follower unit, where the first follower unit is configured to keep an unchanged voltage difference between a gate electrode of the MOSFET of the first switch component unit and a drain electrode thereof, and a gate electrode voltage of the MOSFET of the first switch component unit is greater than a drain electrode voltage thereof. The coder-decoder is electrically connected to the receiver by the second switch module. The second switch module includes a second switch component unit.

Disclosed are a receiver control circuit and a terminal. The receiver control circuit includes: a smart power amplifier module, a coder-decoder, and a receiver. The smart power amplifier module is electrically connected to the receiver by a first switch module. The first switch module includes a first switch component unit that is formed by a metal oxide semiconductor field-effect transistor (MOSFET). The first switch module further includes a first follower unit, where the first follower unit is configured to keep an unchanged voltage difference between a gate electrode of the MOSFET of the first switch component unit and a drain electrode thereof, and a gate electrode voltage of the MOSFET of the first switch component unit is greater than a drain electrode voltage thereof. The coder-decoder is electrically connected to the receiver by the second switch module. The second switch module includes a second switch component unit.

An outphasing amplifier includes a first class-E power amplifier having an output coupled to a first conductor and an input receiving a first RF drive signal. A first reactive element is coupled between the first conductor and a second conductor. A second reactive element is coupled between the second conductor and a third conductor. A second class-E power amplifier includes an output coupled to a fourth conductor and an input coupled to a second RF drive signal, a third reactive element coupled between the second and fourth conductors. Outputs of the first and second power amplifiers are combined by the first, second and third reactive elements to produce an output current in a load. An efficiency enhancement circuit is coupled between the first and fourth conductors to improve power efficiency at back-off power levels. Power enhancement circuits are coupled to the first and fourth conductors, respectively.

An outphasing amplifier includes a first class-E power amplifier having an output coupled to a first conductor and an input receiving a first RF drive signal. A first reactive element is coupled between the first conductor and a second conductor. A second reactive element is coupled between the second conductor and a third conductor. A second class-E power amplifier includes an output coupled to a fourth conductor and an input coupled to a second RF drive signal, a third reactive element coupled between the second and fourth conductors. Outputs of the first and second power amplifiers are combined by the first, second and third reactive elements to produce an output current in a load. An efficiency enhancement circuit is coupled between the first and fourth conductors to improve power efficiency at back-off power levels. Power enhancement circuits are coupled to the first and fourth conductors, respectively.

Systems and method for improving operation of a radio frequency system are provided. One embodiment includes a switching power amplifier that outputs an amplified analog electrical signal based on an input electrical signal and voltage of an envelope voltage supply rail. The switching power amplifier includes a first transistor with a gate that receives the input electrical signal, a source electrically coupled to the envelope voltage supply rail, and a drain electrically coupled to an output of the switching power amplifier; a second transistor with a gate that receives the input electrical signal, a source electrically coupled to ground, and a drain electrically coupled to the output; and a third transistor with a gate that receives the input electrical signal, a drain electrically coupled to the envelope voltage supply rail, and a source electrically coupled to an output of another switching power amplifier.

Systems and method for improving operation of a radio frequency system are provided. One embodiment includes a switching power amplifier that outputs an amplified analog electrical signal based on an input electrical signal and voltage of an envelope voltage supply rail. The switching power amplifier includes a first transistor with a gate that receives the input electrical signal, a source electrically coupled to the envelope voltage supply rail, and a drain electrically coupled to an output of the switching power amplifier; a second transistor with a gate that receives the input electrical signal, a source electrically coupled to ground, and a drain electrically coupled to the output; and a third transistor with a gate that receives the input electrical signal, a drain electrically coupled to the envelope voltage supply rail, and a source electrically coupled to an output of another switching power amplifier.

Circuits and operating methods thereof for correcting phase errors introduced by amplifiers employing gallium nitride (GaN) transistors are described. The phase errors are caused by trapping effects exhibited by the GaN transistors. The circuits described herein pre-distort the phase of the input signal to compensate for the phase error introduced by the amplifier. Thereby, the phase of the output signal of the amplifier has a reduced phase error. For example, the output signal may have a near zero (or zero) phase error.

Circuits and operating methods thereof for correcting phase errors introduced by amplifiers employing gallium nitride (GaN) transistors are described. The phase errors are caused by trapping effects exhibited by the GaN transistors. The circuits described herein pre-distort the phase of the input signal to compensate for the phase error introduced by the amplifier. Thereby, the phase of the output signal of the amplifier has a reduced phase error. For example, the output signal may have a near zero (or zero) phase error.

Provided is a bias circuit that supplies a first bias current or voltage to an amplifier that amplifies a radio frequency signal. The bias circuit includes: an FET that has a power supply voltage supplied to a drain thereof and that outputs the first bias current or voltage from a source thereof; a first bipolar transistor that has a collector thereof connected to a gate of the FET, that has a base thereof connected to the source of the FET, that has a common emitter and that has a constant current supplied to the collector thereof; and a first capacitor that has one end thereof connected to the collector of the first bipolar transistor and that suppresses variations in a collector voltage of the first bipolar transistor.