A bulk acoustic resonator architecture is fabricated by epitaxially forming a piezoelectric film on a top surface of post formed from an underlying substrate. In some cases, the acoustic resonator is fabricated to filter multiple frequencies. In some such cases, the resonator device includes two different resonator structures on a single substrate, each resonator structure configured to filter a desired frequency. Including two different acoustic resonators in a single RF acoustic resonator device enables that single device to filter two different frequencies in a relatively small footprint.

An acoustic wave device including: a POI structure including: a material layer where a high acoustic velocity layer and a low acoustic velocity layer are alternate, a substrate is a lowermost high acoustic velocity layer; a first piezoelectric layer located above the material layer, wherein a layer adjacent to the first piezoelectric layer is referred to as a surface low acoustic velocity layer; wherein an acoustic velocity of a bulk wave propagated in the high acoustic velocity layer and the low high acoustic velocity layer is higher than and lower than an acoustic velocity of a bulk wave of the first piezoelectric layer, respectively. The POI structure includes at least two regions, a first device having a resonance of a first vibration mode is manufactured in the first region, and a second device having a resonance of a second vibration mode is manufactured in a second region.

A combined acoustic wave device package is provided comprising: a first substrate having a bulk acoustic wave (BAW) resonator formed thereon; a second substrate having a surface acoustic wave (SAW) resonator formed thereon; and at least one bonding element connecting the first substrate and second substrate. A method for forming such a combined acoustic wave device package is also provided. A radio frequency (RF) device comprising such a combined acoustic wave device package, and a wireless device comprising an antenna and a such a combined acoustic wave device package are also provided.

Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a fixed electrode with a plurality of fingers on the piezoelectric substrate. The method further includes forming a moveable electrode with a plurality of fingers over the piezoelectric substrate. The method further includes forming actuators aligned with one or more of the plurality of fingers of the moveable electrode.

A surface acoustic wave device assembly includes a collective board, first circuit portions provided on the collective board and respectively including first hot terminals and first ground terminals, a second circuit portion provided on the collective board and including second hot terminals and second ground terminals, and a power supply wiring provided on the collective board so as to surround the periphery of the first circuit portions and the second circuit portion. The first circuit portions include surface acoustic wave devices defining band pass filters. The second circuit portion defines a band pass filter. The first ground terminals and first hot terminals, and the second ground terminal are connected to the power supply wiring, the second hot terminals are not connected to the power supply wiring, and pass bands of the surface acoustic wave devices and a pass band of the band pass filter defined by the second circuit portion are the same or substantially the same.

The invention relates to a covering (1) for an electronic component (e.g. of the MEMS, BAW, or SAW type). The covering comprises at least one layer (5, 6, 7) having a structure (19, 20, 21) with a number of prominences (8, 9, 15) and/or depressions (10, 11, 16). The invention furthermore relates to a method for producing a covering (1) of this type.

The invention relates to a covering (1) for an electronic component (e.g. of the MEMS, BAW, or SAW type). The covering comprises at least one layer (5, 6, 7) having a structure (19, 20, 21) with a number of prominences (8, 9, 15) and/or depressions (10, 11, 16). The invention furthermore relates to a method for producing a covering (1) of this type.

A stacked filter package is disclosed. The stacked filter package can include a first acoustic wave device having a first device type. The first acoustic wave device includes a first substrate having a first coefficient of thermal expansion. The stacked filter package can include a second acoustic wave device having a second device type different from the first device type. The second acoustic wave device includes a second substrate having a second coefficient of thermal expansion. The second coefficient of thermal expansion is at least double the first coefficient of thermal expansion. The stacked filter package can include a bonding structure between the first and second substrates. The bonding structure couples the first and second substrate.

The present disclosure provides an integration method and integration structure for a control circuit and an acoustic wave filter. The method includes: providing a base, the base being provided with a control circuit; forming a first cavity and a second cavity on the base; providing a Surface Acoustic Wave (SAW) resonating plate and a Bulk Acoustic Wave (BAW) resonating structure, a first input electrode and a first output electrode being arranged on a surface of the SAW resonating plate, a second input electrode and a second output electrode being arranged on a surface of the BAW resonating structure, and the BAW resonating structure including a third cavity; facing the surface of the SAW resonating plate towards the base, such that the SAW resonating plate is bonded to the base and seals the first cavity, and facing the surface of the BAW resonating structure towards the base, such that the BAW resonating structure is bonded to the base and seals the second cavity; and electrically connecting the control circuit to the first input electrode, the first output electrode, the second input electrode and the second output electrode. The present disclosure may control the acoustic filters through the control circuit provided on the base, and may avoid the problems of the complex electrical connection process, large insertion loss and the like due to a fact that the existing acoustic filters are integrated to the Printed Circuit Board (PCB) as discrete devices.

A substrate that includes an encapsulation layer, a first acoustic resonator, a second acoustic resonator, at least one first dielectric layer, a plurality of first interconnects, at least one second dielectric layer, and a plurality of second interconnects. The first acoustic resonator is located in the encapsulation layer. The first acoustic resonator includes a first piezoelectric substrate comprising a first thickness. The second acoustic is located in the encapsulation layer. The second acoustic resonator includes a second piezoelectric substrate comprising a second thickness that is different than the first thickness. The at least one first dielectric layer is coupled to a first surface of the encapsulation layer. The plurality of first interconnects is coupled to the first surface of the encapsulation layer. The plurality of first interconnects is located at least in the at least one first dielectric layer.