The invention relates to a method for manufacturing an electroacoustic resonator comprising the steps of: Providing a first substrate having a first side and an opposite second side; depositing a diamond layer having a first side and an opposite second side on said first substrate, wherein the second side of the diamond layer is in contact with said first side of the first substrate; removing the first substrate; forming a piezoelectric layer on the second side of the diamond layer; applying a second substrate to the first side of the diamond layer.

A surface acoustic wave device has a piezoelectric substrate having a cut angle (e.g., the piezoelectric angle is cut so as to have a crystal orientation) that allows the surface acoustic wave device to operate as a longitudinally leaky surface acoustic wave device that confines the acoustic wave energy within the piezoelectric substrate and that has less propagation attenuation and a higher electromechanical coupling coefficient k.sup.2.

A surface acoustic wave (SAW) device having a high electromechanical coupling coefficient based on double-layer electrodes and a preparation method thereof. A structure of the SAW device includes a Cu electrode, a piezoelectric film and an Al electrode on a substrate in sequence. A signal terminal of the Cu electrode is opposite to a ground terminal of the Al electrode. A ground terminal of the Cu electrode is opposite to a signal terminal of the Al electrode. Since Sezawa wave mode that is adopted is formed by coupling film thickness vibration and transverse vibration, a longitudinal electric field (in a direction of thickness of a film) and a transverse electric field (in a propagation direction of SAW) are excited through the double-layer electrodes so that the electromechanical coupling coefficient of the SAW device is improved by changing a coupling pattern between the electric fields and the piezoelectric film.

An acoustic wave device includes a piezoelectric layer, an IDT electrode, a high-acoustic-velocity support substrate, and a low-acoustic-velocity film. The high-acoustic-velocity support substrate is located on an opposite side of the piezoelectric layer from the IDT electrode in the thickness direction of the piezoelectric layer. The low-acoustic-velocity film is disposed between the high-acoustic-velocity support substrate and the piezoelectric layer in the thickness direction. The high-acoustic-velocity support substrate includes a base region and a surface region disposed nearer to the low-acoustic-velocity film than the base region in the thickness direction and whose crystal quality is worse than that of the base region. The surface region includes first and second layers disposed nearer to the base region than the first layer in the thickness direction and whose crystal quality is better than that of the first layer.

Embodiments described herein provide systems and methods for acoustically driving spin rotations of diamond nitrogen-vacancy (NV) centers using acoustic transducers. The acoustic transducers may comprise devices such as bulk acoustic resonators or surface acoustic resonators. The systems and methods may allow driving of m.sub.s=0 to m.sub.s=−1, m.sub.s=0 to m.sub.s=+1, m.sub.s=−1 to m.sub.s=0, and m.sub.s=+1 to m.sub.s=0 single-quantum (SQ) spin transitions without the need to apply magnetic field pulses. This may substantially reduce the size and power requirements of NV center-based sensors. The systems and methods may be used to conduct a variety of measurements, such as measurements of magnetic field, electric field, orientation, strain, or temperature.

A surface acoustic wave (SAW) device and methods of making the same are disclosed. The surface acoustic wave device includes a piezoelectric layer coupled to a high acoustic velocity layer at a first surface of the piezoelectric layer. At least one transducer is provided over a second surface of the piezoelectric layer. The at least one transducer comprises a plurality of IDT electrodes that are formed from a substantially two-dimensional (2D) conductive material and configured to propagate a surface acoustic wave having an operating wavelength along the piezoelectric layer.

A surface acoustic wave (SAW) device includes a first interdigital transducer (IDT) and a second IDT each including interdigital electrodes disposed on a first surface of a substrate of piezoelectric material. The SAW device includes a diamond bridge enclosing an air cavity over a wave propagation region on the first surface of the substrate. The diamond bridge has a reduced height and provides improved thermal conductivity to avoid a reduction in performance and/or life span caused by heat generated in the SAW device. A process of fabricating a SAW device includes forming the first IDT and the second IDT in a metal layer on a first surface of a substrate comprising a piezoelectric material, the first IDT and the second IDT disposed in a wave propagation region of the first surface of the substrate, and forming a diamond bridge disposed above the wave propagation region.

An elastic wave device includes a support substrate, a polycrystalline nanodiamond layer provided directly or indirectly on the support substrate, at least one inorganic material layer provided on the polycrystalline nanodiamond layer, a piezoelectric body provided directly or indirectly on the at least one inorganic material layer, and an IDT electrode provided directly or indirectly on the piezoelectric body. The piezoelectric body propagates an elastic wave at a higher velocity than the polycrystalline nanodiamond layer propagates a bulk wave, and at a lower velocity than the at least one inorganic material layer propagates a bulk wave. The polycrystalline nanodiamond layer has a percentage of sp3 bonds of about 50% or more.

A surface acoustic wave resonator (100) comprises a layered substrate including a carrier substrate (110) and a dielectric layer (112) having a low acoustic velocity. Another dielectric layer (122) is disposed on a piezoelectric layer (113) and interdigitated electrodes (131, 132) having an acoustic velocity lower than the acoustic velocity of the carrier substrate (110) and a positive temperature coefficient of frequency.

A method of manufacturing a surface acoustic wave resonator includes forming or providing a support substrate layer, forming or providing piezoelectric layer of lithium niobate over the support substrate layer, and forming or providing an interdigital transducer electrode including a plurality of fingers over the piezoelectric layer. The piezoelectric layer formed or provided having a cut angle (e.g., the piezoelectric angle is cut so as to have a crystal orientation) that allows the surface acoustic wave device to operate as a longitudinally leaky surface acoustic wave device that confines the acoustic wave energy within the piezoelectric substrate and that has less propagation attenuation and a higher electromechanical coupling coefficient k.sup.2.