Disclosed is a film bulk acoustic resonator (FBAR) type filter including a substrate including two or more cavities on a top surface thereof, a lower electrode formed above the substrate, a piezoelectric layer formed above the lower electrode, two or more upper electrodes formed above the piezoelectric layer, and a package layer including a wall vertically extending while surrounding a periphery of certain areas in which the cavities and the lower electrode are formed and a roof disposed above the wall while being spaced apart from the upper electrodes to seal the certain areas.

An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.

A bulk acoustic wave filter, a manufacturing method thereof, and a communication device are disclosed. The bulk acoustic wave filter includes a first filter substrate and a second filter substrate; the first filter substrate includes a first base substrate and a first resonator, a first electrode pad and a first auxiliary pad arranged on the first base substrate; the second filter substrate includes a second base substrate and a second resonator, a second electrode pad and a second auxiliary pad arranged on the second base substrate, the first filter substrate is arranged opposite to the second filter substrate, the first electrode pad and the second auxiliary pad are in contact with each other, and the second electrode pad and the first auxiliary pad are in contact with each other.

An acoustic resonator package includes: a substrate; an acoustic resonator disposed on the substrate; a cap disposed on the substrate and the acoustic resonator; and a bonding portion bonding the substrate and the cap to each other. The cap includes a central portion accommodating the acoustic resonator, and an outer portion disposed outside of the central portion and having a bonding surface. The outer portion includes protrusions in contact with the bonding portion, and at least one trench disposed between the protrusions. The acoustic resonator package further includes a first protective layer and a second protective layer, the first protective layer and the second protective layer being disposed on a region of the bonding surface formed on each of the protrusions.

A MEMS component having increased integration density and a method for manufacturing such a component are specified. The component comprises a base wafer and a cover wafer arranged over this. A first cavity is arranged between the base wafer and the cover wafer. A second cavity is arranged over the cover wafer, below a thin-layer covering. The cavities contain component structures.

A bulk acoustic resonator package is provided. The bulk acoustic resonator package includes a substrate; a cap; a resonance portion including a first electrode, a piezoelectric layer, and a second electrode, stacked in a first direction in which the substrate and the cap face each other, and disposed between the substrate and the cap; and a cap melting member disposed to surround the resonance portion, and disposed to be in contact with a portion of a surface of the cap facing the substrate, when viewed in the first direction, and including a material or a structure that is based on a melting of the portion of the surface of the cap.

A resonator circuit device. The present invention provides for improved resonator shapes using egg-shaped, partial egg-shaped, and asymmetrical partial egg-shaped resonator structures. These resonator shapes are configured to give less spurious mode/noise below the resonant frequency (F.sub.s) than rectangular, circular, and elliptical resonator shapes. These improved resonator shapes also provide filter layout flexibility, which allows for more compact resonator devices compared to resonator devices using conventionally shaped resonators.

In a described example, an apparatus includes: a first semiconductor die with a component on a first surface; a second semiconductor die mounted on a package substrate and having a third surface facing away from the package substrate; a solder seal bonded to and extending from the first surface of the first semiconductor die flip chip mounted to the third surface of the second semiconductor die, the solder seal at least partially surrounding the stress sensitive component; a first solder joint formed between the solder seal and the third surface of the second semiconductor die; a second solder joint formed between solder at an end of the post connect and the third surface of the second semiconductor die; and a mold compound covering the second surface of the first semiconductor die, a portion of the second semiconductor die, and an outside periphery of the solder seal.

An elastic wave device includes a supporting substrate including an upper surface including a recessed portion, a piezoelectric thin film on the supporting substrate to cover the recessed portion of the supporting substrate, an IDT electrode on a main surface of the piezoelectric thin film, the main surface being adjacent to the supporting substrate, and an intermediate layer on a main surface of the piezoelectric thin film, the main surface being remote from the supporting substrate. A space is defined by the supporting substrate and the piezoelectric thin film. The IDT electrode faces the space. Through holes are provided in the piezoelectric thin film and the intermediate layer to extend from a main surface of the intermediate layer to the space, the main surface being remote from the piezoelectric thin film. The elastic wave device further includes a cover member on the intermediate layer and covering opening ends of the through holes.

Aspects of this disclosure relate to methods of manufacturing bulk acoustic wave components. Such methods include plasma dicing to singulate individual bulk acoustic wave components. A buffer layer can be formed over a substrate of bulk acoustic wave components such that streets are exposed. The bulk acoustic wave components can be plasma diced along the exposed streets to thereby singulate the bulk acoustic wave components