Aspects of the invention relate to a high-power switching module for the direct pulse energy feeding of a consumer with a plurality of switching stages connected in series. A coupling element and an energy buffer store are provided, the coupling element coupling a primary circuit comprising a balancing capacitance and a semiconductor switch to a secondary circuit comprising the energy buffer store, the coupling element being provided and embodied for obtaining energy of the balancing capacitance and delivering this energy to the energy buffer store during the on phase of the semiconductor switch, and the energy buffer store being provided and embodied for delivering the obtained energy to an energy store of the driver assembly when the semiconductor switch is in the switched-off state.

System and method for driving a bipolar junction transistor for a power converter. The system includes a current generator configured to output a drive current signal to a bipolar junction transistor to adjust a primary current flowing through a primary winding of a power converter. The current generator is further configured to output the drive current signal to turn on the bipolar junction transistor during a first time period, a second time period, and a third time period, the second time period separating the first time period from the third time period, drive the bipolar junction transistor to operate in a hard-saturation region during the first time period and the second time period, and drive the bipolar junction transistor to operate in a quasi-saturation region during the third time period.

System and method for driving a bipolar junction transistor for a power converter. The system includes a current generator configured to output a drive current signal to a bipolar junction transistor to adjust a primary current flowing through a primary winding of a power converter. The current generator is further configured to output the drive current signal to turn on the bipolar junction transistor during a first time period, a second time period, and a third time period, the second time period separating the first time period from the third time period, drive the bipolar junction transistor to operate in a hard-saturation region during the first time period and the second time period, and drive the bipolar junction transistor to operate in a quasi-saturation region during the third time period.

A circuit for improving the switching speed of a power electronic switching chip and application thereof are provided. The design method of improving the switching speed of the power electronic switching chip is to switch its state in the saturated conductive state to the simulated saturated-high-on-voltage state which is much higher than the traditional low-saturated-on-voltage state. In this way, the carrier density in the base region and the trailing time constant are greatly reduced and the total power consumption of trailing in the cut-off period can be greatly reduced, and the design limit of switching speed can be improved and the service reliability can be achieved. Therefrom, a design method for power supply of high frequency power electronic transformer (converter) is further disclosed.

Aspects of the invention relate to a high-power switching module for the direct pulse energy feeding of a consumer with a plurality of switching stages connected in series. A coupling element and an energy buffer store are provided, the coupling element coupling a primary circuit comprising a balancing capacitance and a semiconductor switch to a secondary circuit comprising the energy buffer store, the coupling element being provided and embodied for obtaining energy of the balancing capacitance and delivering this energy to the energy buffer store during the on phase of the semiconductor switch, and the energy buffer store being provided and embodied for delivering the obtained energy to an energy store of the driver assembly when the semiconductor switch is in the switched-off state.

A control device for driving a bipolar switchable power semiconductor component is designed to apply an electrical voltage to a gate terminal of the power semiconductor component and to reduce the electrical voltage for turning off the power semiconductor component from a first voltage value to a second voltage value. The control device is designed, for turning off the power semiconductor component, firstly to reduce the electrical voltage from the first voltage value to a desaturation value and then to reduce the electrical voltage from the desaturation value to the second voltage value. The desaturation value is greater than a pinch-off voltage of the power semiconductor component.

A control device for driving a bipolar switchable power semiconductor component is designed to apply an electrical voltage to a gate terminal of the power semiconductor component and to reduce the electrical voltage for turning off the power semiconductor component from a first voltage value to a second voltage value. The control device is designed, for turning off the power semiconductor component, firstly to reduce the electrical voltage from the first voltage value to a desaturation value and then to reduce the electrical voltage from the desaturation value to the second voltage value. The desaturation value is greater than a pinch-off voltage of the power semiconductor component.

System and method for driving a bipolar junction transistor for a power converter. The system includes a current generator configured to output a drive current signal to a bipolar junction transistor to adjust a primary current flowing through a primary winding of a power converter. The current generator is further configured to output the drive current signal to turn on the bipolar junction transistor during a first time period, a second time period, and a third time period, the second time period separating the first time period from the third time period, drive the bipolar junction transistor to operate in a hard-saturation region during the first time period and the second time period, and drive the bipolar junction transistor to operate in a quasi-saturation region during the third time period.

System and method for driving a bipolar junction transistor for a power converter. The system includes a current generator configured to output a drive current signal to a bipolar junction transistor to adjust a primary current flowing through a primary winding of a power converter. The current generator is further configured to output the drive current signal to turn on the bipolar junction transistor during a first time period, a second time period, and a third time period, the second time period separating the first time period from the third time period, drive the bipolar junction transistor to operate in a hard-saturation region during the first time period and the second time period, and drive the bipolar junction transistor to operate in a quasi-saturation region during the third time period.

A control device for driving a bipolar switchable power semiconductor component is designed to apply an electrical voltage to a gate terminal of the power semiconductor component and to reduce the electrical voltage for turning off the power semiconductor component from a first voltage value to a second voltage value. The control device is designed, for turning off the power semiconductor component, firstly to reduce the electrical voltage from the first voltage value to a desaturation value and then to reduce the electrical voltage from the desaturation value to the second voltage value. The desaturation value is greater than a pinch-off voltage of the power semiconductor component.