The present disclosure provides a battery protection device and a chip therein. The chip includes a buffer circuit and a switch circuit. The buffer circuit is configured to generate a gate control signal according to a first logic control signal, a first voltage, a second voltage, and a third voltage. The switch circuit is configured to transmit the second or the third voltage to the buffer circuit. The switch circuit includes an invert circuit and a select circuit. The invert circuit is configured to invert a second logic control signal to a third logic control signal. The select circuit is configured to select the second or third voltage to transmit the same to the buffer circuit according to the second logic control signal and the third logic control signal. The gate control signal is configured to turn off a power transistor when an overcharging or an over-discharging occurs.

An ideal diode circuit is described which uses an NMOS transistor as a low-loss ideal diode. The control circuit for the transistor is referenced to the anode voltage and not to ground, so the control circuitry may be low voltage circuitry, even if the input voltage is very high, referenced to earth ground. A capacitor is clamped to about 10-20 V, referenced to the anode voltage. The clamped voltage powers a differential amplifier for the detecting if the anode voltage is greater than the cathode voltage. The capacitor is charged to the clamped voltage during normal operation of the ideal diode by controlling the conductivity of a second transistor coupled between the cathode and the capacitor, enabling the circuit to be used with a wide range of frequencies and voltages. All voltages applied to the differential amplifier are equal to or less than the clamped voltage.

Pre-conditioning circuitry for pre-conditioning a node of a circuit to support a change in operation of the circuit, wherein the circuit is operative to change a state of the node to effect the change in operation of the circuit, and wherein the pre-conditioning circuitry is configured to apply a voltage, current or charge directly to the node to reduce the magnitude of the change to the state of the node required by the circuit to achieve the change in operation of the circuit.

A selection circuit architecture makes it possible to perform upward and/or downward transitions in sets of sequences of slow and fast phases so as at the same time to solve the problems of inductive switching noise and the problems of currents in the supply rails. This solution has multiple advantages linked to the ease of implementation and flexibility of configurations that are possible for adapting to the specific constraints when designing the circuit.

An electronic chip includes a chip core including an input terminal, an output terminal, an external pad, and an input-output circuit coupled to the chip core and the external pad. The input-output circuit includes an enable terminal coupled to the chip core, a connection terminal coupled to the external pad, a switchable diode device coupled between a supply voltage and a reference voltage, and a levelling circuit. The switchable diode device is coupled to the connection terminal and the enable terminal and is configured to operate as a diode in response to a control signal in a first state applied to the enable terminal and to operate as an open circuit in response to the control signal in a second state applied to the enable terminal. The levelling circuit is coupled to the connection terminal, the input terminal of the chip core, and the output terminal of the chip core.

The present description concerns a method of controlling a bidirectional switch (200), including: first (210 1) and (210 2) field-effect transistors electrically in series between first (262 1) and second (262 2) terminals of the bidirectional switch; third (614) and fourth (612) field-effect transistors electrically in series between said first and second terminals of the bidirectional switch, a first connection node (252) in series with the first and second transistors being common with a second connection node (616) in series with the third and fourth transistors, including steps of: receiving a voltage (V200) between the terminals of the bidirectional switch; detecting, from the received voltage, a first sign of said voltage; at least while the first sign is being detected, coupling the first terminal to said first node (252), potentials of control terminals of the first, second, third, and fourth transistors being referenced to the potential (REF) of the first and second nodes having common sources of the first, second, third, and fourth transistors connected thereto.

A field-effect transistor (FET) based synchronous rectifier for emulating a diode, comprising: a first terminal (20) and a second terminal (30); a first FET (M1) and a second ELT (M2), wherein the second FET (M2) is adapted to control operation of the first FET (M1) to thereby allow unidirectional current flow when the two terminals (20, 30) are connected with an external circuit; and wherein the FET based synchronous rectifier comprises a fully integrated single-chip device (10) adapted to emulate a diode.

The present disclosure provides a switching current source circuit and a method for quickly establishing a switching current source. The switching current source circuit includes a first and a second switching current source branches connected in parallel with one end of a load. When the switching enable signal is switched, due to the charge coupling of the first and second switching current source branches, the bias voltage respectively generates bounce in the same direction as and a direction opposite to the transition direction of the switching enable signal. The two bounces cancel each other to make the current source bias voltage recover quickly when a toggle event happens. The present disclosure accelerates the establishment of current through the coupling of charges, and reduces the decoupling capacitance at the same time, thereby reducing the circuit area and saving the costs.

Embodiments relate to circuit for reversing a threshold voltage shift of a transistor. The circuit includes a current mirror for sensing a transistor current and generating a mirrored current corresponding to the sensed transistor current, a gate biasing module for providing a gate bias to the transistor, and a calibration engine configured to receive the mirrored current from the current mirror and to control the gate biasing module in response to determining whether the mirrored current is outside of a predetermined range indicative of a shift in the threshold voltage of the transistor. The gate biasing module includes a gate biasing circuit configured to operate the transistor in a region where hot carrier injection (HCI) is present, and a gate switch for coupling the gate biasing circuit to a gate terminal of the transistor.

According to one aspect of embodiments, a drive circuit of a normally-ON transistor includes: a normally-OFF transistor that includes a main current path connected in serial to a main current path of the normally-ON transistor; and a buffer circuit that supplies, to a gate of the normally-ON transistor, a control signal for controlling turning ON and OFF of the normally-ON transistor, whose high-voltage side and low-voltage side are biased by a bias voltage supplied from a power source unit.