B-TRAN bipolar power transistor devices and methods, using a drift region which is much thinner than previously proposed double-base bipolar transistors of comparable voltage. This is implemented in a high-bandgap semiconductor material (preferably silicon carbide). Very high breakdown voltage, and fast turn-off, are achieved with very small on-resistance.

A bi-directional bipolar junction transistor (BJT) structure, comprising: a base region of a first conductivity type, wherein said base region constitutes a drift region of said structure; first and second collector/emitter (CE) regions, each of a second conductivity type adjacent opposite ends of said base region; wherein said base region is lightly doped relative to said collector/emitter regions; the structure further comprising: a base connection to said base region, wherein said base connection is within or adjacent to said first collector/emitter region.

According to one embodiment, a control circuit is connected to an element portion including a first element. The first element includes a first gate, a first collector, and a first emitter. The control circuit performs a first operation and a second operation. In at least a portion of the first operation, the control circuit causes a first current to flow from the first collector toward the first emitter. In at least a portion of the second operation, the control circuit causes a second current to flow from the first emitter toward the first collector. A first time constant of a switching of the first element in the first operation is different from a second time constant of a switching of the first element in the second operation.

An electric power conversion apparatus includes at least one semiconductor module, a capacitor, a pair of positive and negative busbars and an insulator. The positive busbar includes a positive busbar base protruding from the capacitor in a Y direction and at least one positive busbar terminal extending perpendicular to an X direction. The negative busbar includes a negative busbar base protruding from the capacitor in the Y direction and at least one negative busbar terminal extending perpendicular to the X direction. The positive and negative busbar bases are arranged to have their major surfaces facing each other in a Z direction. The positive and negative busbar terminals at least partially overlap each other in the X direction with the insulator interposed therebetween. The at least one semiconductor module has a pair of positive and negative power terminals connected respectively to the positive and negative busbar terminals.

According to one embodiment, a control circuit is connected to an element portion including a first element. The first element includes a first gate, a first collector, and a first emitter. The control circuit performs a first operation and a second operation. In at least a portion of the first operation, the control circuit causes a first current to flow from the first collector toward the first emitter. In at least a portion of the second operation, the control circuit causes a second current to flow from the first emitter toward the first collector. A first time constant of a switching of the first element in the first operation is different from a second time constant of a switching of the first element in the second operation.

Methods and systems for operating a double-base bidirectional power bipolar transistor. Two timing phases are used to transition into turn-off: one where each base is shorted to its nearest emitter/collector region, and a second one where negative drive is applied to the emitter-side base to reduce the minority carrier population in the bulk substrate. A diode prevents reverse turn-on while negative base drive is being applied.

Methods and systems for operating a double-base bidirectional power bipolar transistor. Two timing phases are used to transition into turn-off: one where each base is shorted to its nearest emitter/collector region, and a second one where negative drive is applied to the emitter-side base to reduce the minority carrier population in the bulk substrate. A diode prevents reverse turn-on while negative base drive is being applied.

An electric power conversion apparatus includes at least one semiconductor module, a capacitor, a pair of positive and negative busbars and an insulator. The positive busbar includes a positive busbar base protruding from the capacitor in a Y direction and at least one positive busbar terminal extending perpendicular to an X direction. The negative busbar includes a negative busbar base protruding from the capacitor in the Y direction and at least one negative busbar terminal extending perpendicular to the X direction. The positive and negative busbar bases are arranged to have their major surfaces facing each other in a Z direction. The positive and negative busbar terminals at least partially overlap each other in the X direction with the insulator interposed therebetween. The at least one semiconductor module has a pair of positive and negative power terminals connected respectively to the positive and negative busbar terminals.

Methods and systems for operating a double-base bidirectional power bipolar transistor. Two timing phases are used to transition into turn-off: one where each base is shorted to its nearest emitter/collector region, and a second one where negative drive is applied to the emitter-side base to reduce the minority carrier population in the bulk substrate. A diode prevents reverse turn-on while negative base drive is being applied.

We disclose a bi-directional bipolar junction transistor (BJT) structure, comprising: a base region of a first conductivity type, wherein said base region constitutes a drift region of said structure; first and second collector/emitter (CE) regions, each of a second conductivity type adjacent opposite ends of said base region; wherein said base region is lightly doped relative to said collector/emitter regions; the structure further comprising: a base connection to said base region, wherein said base connection is within or adjacent to said first collector/emitter region.