A method includes pre-charging a parasitic capacitance of a control node that is coupled to a control terminal of first and second transistors that have respective current paths that form a switched current path coupled between a load node and a storage node. Pre-charging the parasitic capacitance includes: making conductive a first auxiliary transistor that has a current path coupled between the storage node and the control node, or making conductive a second auxiliary transistor that has a current path coupled between the load node and the control node. The method further includes, after pre-charging the parasitic capacitance, making the switched current path conductive to couple the load node to the storage node.

An integrated circuit includes a first-voltage power rail and a second-voltage power rail in a first connection layer, and includes a first-voltage underlayer power rail and a second-voltage underlayer power rail below the first connection layer. Each of the first-voltage and second-voltage power rails extends in a second direction that is perpendicular to a first direction. Each of the first-voltage and second-voltage underlayer power rails extends in the first direction. The integrated circuit includes a first via-connector connecting the first-voltage power rail with the first-voltage underlayer power rail, and a second via-connector connecting the second-voltage power rail with the second-voltage underlayer power rail.

There is provided an apparatus and method, the apparatus comprising a power input and a switch isolation circuit to provide isolation between the power input and a protected switch responsive to a timing signal. The switch isolation circuit comprises a switch isolation charge store, and a buffer circuit to receive power from the switch isolation charge store and coupled between the timing signal and the protected switch. The switch isolation circuit is configured to, in response to the timing signal having the first value, operate in a powered mode in which the switch isolation charge store receives power from the power input; and, in response to the timing signal having the second value, operate in an isolation mode in which the switch isolation charge store is isolated from the power input.

An aspect of the disclosure relates to an apparatus including an output driver, including: a first p-channel metal oxide semiconductor field effect transistor (PMOS FET); a second PMOS FET coupled in series with the first PMOS FET between an upper voltage rail and an output; a first n-channel metal oxide semiconductor field effect transistor (NMOS FET); and a second NMOS FET coupled in series with the first NMOS FET between the output and a lower voltage rail; a first predriver coupled to gates of the first and second PMOS FETs and first and second NMOS FETs; and a second predriver coupled to the gates of the first and second PMOS FETs and first and second NMOS FETs.

A solid state relay and a method for controlling a signal path between an AC-signal output and a load in a power amplifier assembly are disclosed. The relay comprises a first and a second MOSFET having a common gate junction, a common source junction and wherein and wherein a drain terminal of a first MOSFET and a drain terminal of a second MOSFET form relay terminals. The solid state relay further comprises a control circuit comprising a positive side comprising a first controlled current generator configured to provide a first control current to the gate junction, and a negative side comprising a current mirror circuit configured to sink a second current from the source junction. Hereby, a generic solid state speaker relay has been disclosed. The relay performs up to the most stringent demands regarding pop/click on high quality products. It can be used to ground wire break, hot wire break and BTL (Bridge Tied Load) break. The design is rather tolerable to different MOSFETs and very competitive in quality and price.

A regeneration circuit includes a first inverting circuit and a second inverting circuit. The regeneration circuit also includes a first transistor coupled to an input of the second inverting circuit, and a second transistor coupled to an input of the first inverting circuit, a third transistor and a fourth transistor. A gate of the first transistor and a gate of the fourth transistor are coupled to a first input, and a gate of the second transistor and a gate of the fourth transistor are coupled to a second input. The regeneration circuit further includes a first switch and a second switch. The first switch and the third transistor are coupled in series between a first rail and the first transistor, and the second switch and the fourth transistor are coupled in series between the first rail and the second transistor.

A device including an inverter circuit, a hysteresis control circuit, and a high-side input level shifter. The inverter circuit having an output and including at least two series connected PMOS transistors connected, at the output, in series to at least two series connected NMOS transistors. The hysteresis control circuit coupled to the output to provide feedback to the at least two series connected PMOS transistors and to the at least two series connected NMOS transistors. The high-side input level shifter connected to gates of the at least two PMOS transistors and configured to shift a low level of an input signal to a higher level and provide the higher level to one or more of the gates of the at least two PMOS transistors.

An aspect relates to an apparatus including a first pair of switching devices configured to selectively couple an application processor to a Universal Serial Bus (USB) differential data transmission lines; a USB host port connector coupled to the USB differential data transmission lines; a second pair of switching devices configured to selectively couple an audio circuit to the USB differential data transmission lines; and an equalizer including differential terminals coupled to the USB differential data transmission lines, respectively.

A driver circuit includes a first deglitcher circuit that delays a rising edge or a falling edge of an input signal according to a mode control signal and supplies a first output signal. A second deglitcher circuit receives the first output signal and delays either a rising edge or a falling edge of the first output signal by a second delay according to the mode control signal and supplies a second output signal. Logic gates combine the first and second output signals to supply gate control signals for output transistors to drive the driver circuit output. A sum of the first delay and the second delay determines the total deglitch time defining a pulse width of pulses that are suppressed by the driver circuit and the second delay determines a non-overlap time. The non-overlap time overlaps in time with the total deglitch time.

Circuits that employ selective solid-state isolation of circuit elements can include solid-state switches, such as back-to-back Field Effect Transistor (FET) pairs, and isolated gate drive electronics adapted to operate the solid-state switches in order to selectively decouple certain circuit elements. The isolated solid-state switches can be placed in series to achieve higher standoff voltages, and can be configured for low on resistance and short switching times. The gate drive electronics can include electrical isolation components adapted to enhance standoff voltages and reduce electrical noise at the selectively isolated circuit elements.