Edge-sensitive, state-based single flux quantum (SFQ) based circuitry and related methods convert return-to-zero (RZ) or non-return-to-zero (NRZ) encoded SFQ-pulse-based signals to bilevel NRZ phase signals that can subsequently be converted to bilevel voltage signals by an output amplifier (OA). The SFQ-based circuitry can be integrated with a current amplification stage of a driver that can be coupled to a stage of the OA. The SFQ-based circuitry can be made to be compatible with RQL-encoded input signals that can be either RZ or NRZ. The SFQ-based circuitry can thus be compatible with both wave-pipelined (WPL) and phase-mode (PML) RQL circuitry. Because the SFQ-based circuitry and related methods are edge-sensitive and state-based, they can function at system clock rates in excess of 1 GHz with reduced glitches and improved bit error rates as compared to other superconducting RZ-NRZ conversion circuitry and methods.

It is provided a driving system, a driving method, a computer system and a computer readable medium. The driving system includes: an input circuit configured to receive an input on-chip voltage and output the on-chip voltage; an adjusting circuit configured to automatically detect a present amplitude of the on-chip voltage output by the input circuit and to output a bias voltage corresponding to the present amplitude of the on-chip voltage to a gate of the driven thin film transistor, wherein a source of the thin film transistor is directly or indirectly coupled to the on-chip voltage, and the bias voltage is lower than the on-chip voltage. The protection of the transistor gate and the adjusting of a receiver threshold voltage for different I/O (input/output) voltages and levels can be completed through automatic detection of the on-chip voltage and automatic adjusting.

An aspect of the disclosure relates to an apparatus including an output driver, including: a first p-channel metal oxide semiconductor field effect transistor (PMOS FET); a second PMOS FET coupled in series with the first PMOS FET between an upper voltage rail and an output; a first n-channel metal oxide semiconductor field effect transistor (NMOS FET); and a second NMOS FET coupled in series with the first NMOS FET between the output and a lower voltage rail; a first predriver coupled to gates of the first and second PMOS FETs and first and second NMOS FETs; and a second predriver coupled to the gates of the first and second PMOS FETs and first and second NMOS FETs.

An input circuit includes an input buffer circuit using a first node as an input and a second node as an output, an N-type transistor having a source coupled to the input terminal, a drain coupled to the first node, and a gate coupled to a power supply, and a pull-up circuit provided between the first node and the power supply. The pull-up circuit is configured to make the power supply and the first node conducive with each other for a predetermined period when the input signal transitions from low to high and not to make the power supply and the first node conductive with each other when the input signal transitions from high to low.

A device is disclosed herein. The device includes a bias generator, an ESD driver, and a logic circuit. The bias generator includes a first transistor. The ESD driver includes a second transistor and a third transistor coupled to each other in series. The logic circuit is configured to generate a logic control signal. A first terminal of the first transistor is configured to receive a reference voltage signal, a control terminal of the first transistor is configured to receive a detection signal in response to an ESD event being detected, a second terminal of the first transistor is coupled to a control terminal of the third transistor, and a control terminal of the second transistor is configured to receive the logic control signal.

A circuit includes a first transistor having first and second current terminals and a first control input, and a second transistor having third and fourth current terminals and a second control input. The third current terminal is connected to the second current terminal at an intermediate node and the fourth current terminal connected to a ground or supply node. In some cases, a third transistor is connected to the intermediate node to bias the intermediate rather than letting the intermediate node float. In other cases, a capacitor is connected to the intermediate node to reduce a negative voltage that might otherwise be present on the intermediate node.

A high-voltage tolerant circuit includes a first level shifter responsive to an input signal having a first logic high voltage and a first logic low voltage for providing a first intermediate signal having the first logic high voltage and a second logic low voltage referenced to a second reference voltage higher than the first logic low voltage, a second level shifter responsive to the input signal for providing a second intermediate signal having a second logic high voltage referenced to a first reference voltage lower than the first logic high voltage, and the first logic low voltage, an output stage responsive to the first and second intermediate signals for providing an output signal having the first logic high voltage and the first logic low voltage, and a reference voltage generation circuit providing the second logic high and second logic low voltages without drawing current from the reference voltage generation circuit.

Embodiments of the disclosure provide a level shift circuit, a chip and a display device. By setting first and second voltage clamping modules, and by adjusting first clamping voltage by controlling bias voltage input to the first voltage clamping module and adjusting second clamping voltage by controlling bias voltage and second bias voltage input to the second voltage clamping module, respective operating and output voltages of the first and the second voltage clamping modules and the shift module are within small range. Therefore, even the level shift circuit is designed by using devices with breakdown voltage lower than the difference between the first and second power supply voltages, the devices in the level shift circuit may be avoid being breakdown. Accordingly, some process platforms that cannot produce high-breakdown voltage devices may produce chips including the level shift circuit in the embodiment, and the restrictions on the process platform are reduced.

A level shifter may include: a discharge circuit configured to receive an input signal on the basis of a first power supply voltage, and discharge an internal node on the basis of the input signal; a charge supply circuit configured to supply charge to an output node from which an output signal is outputted, on the basis of a second power supply voltage; and a voltage adjustment circuit including a first MOS transistor coupled between the internal node and the output node, and configured to adjust the voltage of the output node on the basis of a bias voltage applied to the first MOS transistor, and stop the operation of adjusting the voltage of the output node on the basis of the bias voltage, when the levels of the first and second power supply voltages are equal to each other.

An ESD protection circuit has a driver transistor with a drain that is coupled to an I/O pad of an IC device and a source that is coupled to a first rail of a power supply in the IC device, and a diode that couples the I/O pad to the first rail and that is configured to be reverse-biased when a rated voltage is applied to the I/O pad. The rated voltage lies within a nominal operating range for voltage levels defined for the input/output pad. The ESD protection circuit has a gate pull transistor that couples a gate of the driver transistor to the I/O pad or the first rail. The gate pull transistor may be configured to present a high impedance path between the gate of the driver transistor and the I/O pad or the first rail when the rated voltage is applied to the I/O pad. The gate pull transistor may be configured to provide a low impedance path between the gate of the driver transistor and the I/O pad or the first rail when an overvoltage signal applied to the I/O pad has a magnitude that exceeds the nominal operating range of voltage levels defined for the I/O pad.