Apparatuses and methods for temperature and process corner sensitive control of power gated domains are described. An example apparatus includes an internal circuit; a power supply line; and a power gating control circuit which responds, at least in part, to a first change from a first state to a second state of a control signal to initiate supplying a power supply voltage from the power supply line to the internal circuit, and continue supplying the power supply voltage from the power supply line to internal circuit for at least a timeout period from a second change from the second state to the first state of the control signal, in which the timeout period represent temperature dependency.

An integrated circuit includes first and second bus terminals, a pass-gate transistor, first and rising time accelerator (RTA) control circuits, and first and second falling time accelerator (FTA) control circuits. The pass-gate transistor couples between the first and second bus terminals. The first RTA control circuit couples to the first bus terminal, detects a rising edge on the first bus terminal, and accelerates the rising edge on the first bus terminal. The first FTA control circuit couples to the first bus terminal, detects a falling edge on the first bus terminal having a slope below a threshold, and accelerates the falling edge on the first bus terminal. The second RTA and FTA control circuits function similar to the first RTA and FTA control circuits but with respect to the second bus terminal.

A high-voltage tolerant circuit includes a first level shifter responsive to an input signal having a first logic high voltage and a first logic low voltage for providing a first intermediate signal having the first logic high voltage and a second logic low voltage referenced to a second reference voltage higher than the first logic low voltage, a second level shifter responsive to the input signal for providing a second intermediate signal having a second logic high voltage referenced to a first reference voltage lower than the first logic high voltage, and the first logic low voltage, an output stage responsive to the first and second intermediate signals for providing an output signal having the first logic high voltage and the first logic low voltage, and a reference voltage generation circuit providing the second logic high and second logic low voltages without drawing current from the reference voltage generation circuit.

An electronic device may include one or more output buffers each including a pair of final p-channel metal oxide semiconductor (PMOS) and n-channel metal oxide semiconductor (NMOS) transistors, a first pre-buffer to drive the PMOS transistor, and a second pre-buffer to drive the NMOS transistor. Each output buffer receives power from a pre-buffer supply filtering circuit, which may include a supply capacitor for stabilizing supply voltage, a low-pass first pre-buffer supply filter to filter the voltage supplied to the first pre-buffer, and a low-pass second pre-buffer supply filter the voltage supplied to the second pre-buffer.

A buffer circuit includes an input terminal configured to receive an input signal, an output terminal, a buffer, and an RC circuit coupled in series with the buffer between the input terminal and the output terminal. The RC circuit includes a first transistor and an RC network including a resistor and a capacitor, the first transistor is coupled in series with the resistor between a power supply node and a reference node, and the buffer and the RC circuit are configured to generate an output signal based on the input signal.

An integrated circuit includes an output pad, and I/O driver that drives data to the output pad, and a predriver that controls the I/O driver. The integrated circuit includes maximum voltage generator that receives a first supply voltage and a second supply voltage and outputs to the predriver a maximum voltage corresponding to the higher of the first supply voltage and the second supply voltage.

Methods and devices used to cancel non-linear capacitances in high power radio frequency (RF) switches manufactured in bulk complementary metal-oxide-semiconductor (CMOS) processes are disclosed. The methods and devices are also applicable to stacked switches and RF switches fabricated in silicon-on-insulator (SOI) technology.

In examples, a system includes a differential input device having a first input and a second input. The system includes a window generator configured to output, at a first output, a first voltage above a reference voltage and a second voltage, at a second output, below the reference voltage. The system includes a multiplexer coupled to the first output and the second output, the multiplexer configured to receive the first voltage, the second voltage, and an input voltage. The system includes a selector coupled to the multiplexer and configured to select the first voltage, the second voltage, or the input voltage based on a value of the input voltage, where the selector is configured to cause the multiplexer to provide the selected voltage to the first input of the differential input device, where a voltage source provides the reference voltage to the second input of the differential input device.

A system includes a first park circuit having a signal input, an output, and a control input. The system also includes a first signal path having an input and an output, wherein the input of the first signal path is coupled to the output of the first park circuit. The system also includes a second park circuit having a signal input, an output, and a control input, wherein the signal input of the second park circuit is coupled to the output of the first signal path. The system further includes a second signal path having an input and an output, wherein the input of the second signal path is coupled to the output of the second park circuit.

An interface circuit includes: a buffer circuit configured to receive an input signal and to generate an output signal having a delay time, the delay time being determined based on a current level of a bias current and a voltage level of a power supply voltage; and a bias generation circuit configured to vary a voltage level of a bias control voltage so that the delay time is constant by compensating for a change in the voltage level of the power supply voltage, the bias generation circuit being further configured to provide the bias control voltage to the buffer circuit.