An image sensor including a pixel array section in which a plurality of pixels including photoelectric conversion units is disposed, and a comparator that compares an analog pixel signal output from the pixels to a predetermined reference signal, and outputs a comparison result according to a signal level of the pixel signal. The comparator includes differential pair transistors, a first load transistor connected in series with a first transistor of the differential pair, and a second load transistor connected in series with a second transistor of the differential pair. The first transistor of the differential pair accepts a signal obtained by combining the pixel signal and the predetermined reference signal as a gate input, the second transistor of the differential pair accepts a predetermined voltage as a gate input. In addition, a capacitance unit is connected between a common connection node of the first transistor of the differential pair and the first load transistor, and a node of the predetermined voltage.

A semiconductor device that restores degraded data is provided. The semiconductor device includes a first circuit, a storage portion, and an arithmetic portion. The first circuit includes a current source and a first switch. The storage portion includes a first transistor and a first capacitor. The arithmetic portion includes a second transistor. A first terminal of the first transistor is electrically connected to a control terminal of the first switch, a first terminal of the first switch is electrically connected to an output terminal of the current source, and a second terminal of the first switch is electrically connected to a first terminal of the second transistor. When data retained in the arithmetic portion is restored, the first transistor is turned on, and the data retained in the storage portion is supplied to the control terminal of the first switch through the first transistor. The first switch is brought into an on state or an off state in accordance with the data and supplies current from the current source to the arithmetic portion through the second transistor to supply electric charge to a retention portion of the arithmetic portion.

An image sensor including a pixel array section in which a plurality of pixels including photoelectric conversion units is disposed, and a comparator that compares an analog pixel signal output from the pixels to a predetermined reference signal, and outputs a comparison result according to a signal level of the pixel signal. The comparator includes differential pair transistors, a first load transistor connected in series with a first transistor of the differential pair, and a second load transistor connected in series with a second transistor of the differential pair. The first transistor of the differential pair accepts a signal obtained by combining the pixel signal and the predetermined reference signal as a gate input, the second transistor of the differential pair accepts a predetermined voltage as a gate input. In addition, a capacitance unit is connected between a common connection node of the first transistor of the differential pair and the first load transistor, and a node of the predetermined voltage.

A multiply-accumulate operation device, circuit and method are disclosed. In on example, a multiply-accumulate operation device includes input lines, multiplication units, an accumulation unit, a charging unit, and an output unit. Pulse signals having pulse widths corresponding to input values are input to the input lines. The multiplication units generate, based on the pulse signals, charges corresponding to multiplication values obtained by multiplying the input values by weight values. The accumulation unit accumulates a sum of the charges corresponding to the multiplication values. The charging unit charges the accumulation unit at a charging speed associated with its accumulation state. The output unit outputs a multiply-accumulate signal representing a sum of the multiplication values by executing threshold determination using a threshold value associated with the accumulation state of the accumulation unit on a voltage held by the accumulation unit after the charging by the charging unit is started.

A multiply-accumulate operation device, circuit and method are disclosed. In on example, a multiply-accumulate operation device includes input lines, multiplication units, an accumulation unit, a charging unit, and an output unit. Pulse signals having pulse widths corresponding to input values are input to the input lines. The multiplication units generate, based on the pulse signals, charges corresponding to multiplication values obtained by multiplying the input values by weight values. The accumulation unit accumulates a sum of the charges corresponding to the multiplication values. The charging unit charges the accumulation unit at a charging speed associated with its accumulation state. The output unit outputs a multiply-accumulate signal representing a sum of the multiplication values by executing threshold determination using a threshold value associated with the accumulation state of the accumulation unit on a voltage held by the accumulation unit after the charging by the charging unit is started.

A semiconductor device that restores degraded data is provided. The semiconductor device includes a first circuit, a storage portion, and an arithmetic portion. The first circuit includes a current source and a first switch. The storage portion includes a first transistor and a first capacitor. The arithmetic portion includes a second transistor. A first terminal of the first transistor is electrically connected to a control terminal of the first switch, a first terminal of the first switch is electrically connected to an output terminal of the current source, and a second terminal of the first switch is electrically connected to a first terminal of the second transistor. When data retained in the arithmetic portion is restored, the first transistor is turned on, and the data retained in the storage portion is supplied to the control terminal of the first switch through the first transistor. The first switch is brought into an on state or an off state in accordance with the data and supplies current from the current source to the arithmetic portion through the second transistor to supply electric charge to a retention portion of the arithmetic portion.

Embodiments herein describe single event upset (SEU) tolerant flip-flop that includes master latch circuitry, slave latch circuitry, and a tristate driver having an input coupled to an output of the master latch circuitry and an output coupled to a first data input of the slave latch circuitry, where the first tristate driver is configured to inhibit charge transfer from the first data input of the slave latch circuitry to the output of the master latch circuitry.