A multiplexer selects one of a first to a fourth data signal in response to a first to a fourth pulse. The first to fourth pulses respectively correspond to the first to fourth data signals and sequentially toggle. The multiplexer includes: (1) a NAND gate that receives the first data signal, a fourth complementary data signal that is a complementary signal of the fourth data signal, and the first pulse and outputs a first gate signal and (2) a NOR gate that receives the first data signal, the fourth complementary data signal, and a first complementary pulse that is complementary to the first pulse and outputs a second gate signal. The first data signal corresponds to a rising edge of the first pulse, and the fourth complementary data signal corresponds to a rising edge of the fourth pulse.

An IC includes a first and second active areas (AA) with a second conductivity type, a source and drain region, and an LDD extension to the source and drain in the first AA having a first conductivity type. A first bent-gate transistor includes a first gate electrode over the first AA extending over the corresponding LDD. The first gate electrode includes an angled portion that crosses the first AA at an angle of 45° to 80°. A second transistor includes a second gate electrode over the second AA extending over the corresponding LDD including a second gate electrode that can cross an edge of the second AA at an angle of about 90°. A first pocket distribution of the second conductivity type provides a pocket region under the first gate electrode. A threshold voltage of the first bent-gate transistor is ≥30 mV lower as compared to the second transistor.

An IC includes a first and second active areas (AA) with a second conductivity type, a source and drain region, and an LDD extension to the source and drain in the first AA having a first conductivity type. A first bent-gate transistor includes a first gate electrode over the first AA extending over the corresponding LDD. The first gate electrode includes an angled portion that crosses the first AA at an angle of 45° to 80°. A second transistor includes a second gate electrode over the second AA extending over the corresponding LDD including a second gate electrode that can cross an edge of the second AA at an angle of about 90°. A first pocket distribution of the second conductivity type provides a pocket region under the first gate electrode. A threshold voltage of the first bent-gate transistor is ≥30 mV lower as compared to the second transistor.

Techniques and systems for determining an output waveform at an output of a complementary metal-oxide-semiconductor (CMOS) logic gate are described. Some embodiments can identify at least one set of inputs of the CMOS logic gate that, when switched together, causes multiple transistors coupled in parallel to simultaneously turn-on and drive the output of the CMOS logic gate. Next, the embodiments can determine a set of current source models that are coupled in parallel to model the CMOS logic gate when the set of inputs of the CMOS logic gate are switched together. The embodiments can then simulate the set of current source models together to determine the output waveform at the output of the CMOS logic gate when the set of inputs of the CMOS logic gate are switched together.

Techniques and systems for determining an output waveform at an output of a complementary metal-oxide-semiconductor (CMOS) logic gate are described. Some embodiments can identify at least one set of inputs of the CMOS logic gate that, when switched together, causes multiple transistors coupled in parallel to simultaneously turn-on and drive the output of the CMOS logic gate. Next, the embodiments can determine a set of current source models that are coupled in parallel to model the CMOS logic gate when the set of inputs of the CMOS logic gate are switched together. The embodiments can then simulate the set of current source models together to determine the output waveform at the output of the CMOS logic gate when the set of inputs of the CMOS logic gate are switched together.

Provided is a Complementary Metal Oxide Semiconductor (CMOS) logic element. The CMOS logic element includes a substrate including a PMOS area, a circuit wiring structure including an insulating layer and a wiring layer alternately stacked on the substrate, wherein the circuit wiring structure includes an NMOS area vertically spaced apart from the PMOS area, a first transistor disposed on the PMOS area, and a second transistor disposed on the NMOS area and complementarily connected to the first transistor, wherein the first transistor includes a first gate electrode, source/drain areas formed on the PMOS area on both sides of the first gate electrode, and a first channel connecting the source and drain areas to each other, wherein the second transistor includes a second gate electrode and a second channel vertically overlapping the second gate electrode, wherein the first channel includes silicon, wherein the second channel includes an oxide semiconductor.

Provided is a Complementary Metal Oxide Semiconductor (CMOS) logic element. The CMOS logic element includes a substrate including a PMOS area, a circuit wiring structure including an insulating layer and a wiring layer alternately stacked on the substrate, wherein the circuit wiring structure includes an NMOS area vertically spaced apart from the PMOS area, a first transistor disposed on the PMOS area, and a second transistor disposed on the NMOS area and complementarily connected to the first transistor, wherein the first transistor includes a first gate electrode, source/drain areas formed on the PMOS area on both sides of the first gate electrode, and a first channel connecting the source and drain areas to each other, wherein the second transistor includes a second gate electrode and a second channel vertically overlapping the second gate electrode, wherein the first channel includes silicon, wherein the second channel includes an oxide semiconductor.

Described is a level-shifter that can save area between voltage domains with limited voltage differential, and further save power by steering current between two power supply rails. The level-shifter comprises: an input to receive a first signal between a first reference rail and a second reference rail; an output to provide a second signal the first reference rail and a third reference rail, wherein in a voltage level of the third reference rail is higher than a voltage level of the second reference rail, and wherein a voltage level of the first reference is lower than the voltage level of the second reference rail and the third reference rail; and a circuitry coupled to the input and the output, wherein the circuitry is to steer current from the third reference rail to the second reference rail.

Described is a level-shifter that can save area between voltage domains with limited voltage differential, and further save power by steering current between two power supply rails. The level-shifter comprises: an input to receive a first signal between a first reference rail and a second reference rail; an output to provide a second signal the first reference rail and a third reference rail, wherein in a voltage level of the third reference rail is higher than a voltage level of the second reference rail, and wherein a voltage level of the first reference is lower than the voltage level of the second reference rail and the third reference rail; and a circuitry coupled to the input and the output, wherein the circuitry is to steer current from the third reference rail to the second reference rail.

Disclosed is a circuit for converting a temperature change amount into a voltage change amount in a motor drive system, including a positive temperature change rate voltage generation module, a circuit bias module, and a temperature detection module that are integrated on a same substrate. An external power supply voltage is processed by the positive temperature change rate voltage generation module and the circuit bias module, and then inputted to the temperature detection module. The temperature detection module detects in real time the temperature change amount in the motor drive system, convert the temperature change amount into the voltage change amount, and transfer the voltage change amount to the circuit bias module, to allow the circuit bias module to output the voltage change amount. In this way, the conversion from the temperature change amount into the voltage change amount is realized.