Patent classifications
H03K19/0966
COMPOSITIONS AND METHODS FOR PREPARING OLIGONUCLEOTIDE SOLUTIONS
The present invention is directed to methods and compositions for generating a pool of oligonucleotides. The invention finds use in preparing a population or subpopulations of oligonucleotides in solution. The pool of oligonucleotides finds use in a variety of nucleic acid detection and/or amplification assays.
Compositions and methods for preparing oligonucleotide solutions
The present invention is directed to methods and compositions for generating a pool of oligonucleotides. The invention finds use in preparing a population or subpopulations of oligonucleotides in solution. The pool of oligonucleotides finds use in a variety of nucleic acid detection and/or amplification assays.
Logic circuit, semiconductor device, electronic component, and electronic device
A drive capability of a dynamic logic circuit is improved. A logic circuit includes a dynamic logic circuit, a first output node, a first transistor that is diode-connected, and a capacitor. The dynamic logic circuit includes a second output node. The first transistor and transistors in the dynamic logic circuit have an n-type conductivity or a p-type conductivity. The first output node is electrically connected to a first terminal of the capacitor, and the second output node is electrically connected to a second terminal of the capacitor. A first terminal of the first transistor is electrically connected to the first output node, and a first voltage is input to a second terminal of the first transistor.
FAULT RESILIENT FLIP-FLOP WITH BALANCED TOPOLOGY AND NEGATIVE FEEDBACK
The disclosure relates to a latch including a first inverter with a first pair of field effect transistors (FETs) configured with a first channel width to length ratio (W/L), and a second inverter with a second pair of FETs configured with a second W/L different than the first W/L. Another latch includes first and second inverters; a first negative feedback circuit including first and second FETs coupled between first and second voltage rails, the input of the first inverter coupled between the first and second FETs, and the first and second FETs including gates coupled to an output of the first inverter; and a second negative feedback circuit including third and fourth FETs coupled between the first and second voltage rails, the input of the second inverter coupled between the third and fourth FETs, and the third and fourth FETs including gates coupled to an output of the second inverter.
REDUCED-POWER DYNAMIC DATA CIRCUITS WITH WIDE-BAND ENERGY RECOVERY
Reduced-power dynamic data circuits with wide-band energy recovery are described herein. In one embodiment, a circuit system comprises at least one sub-circuit in which at least one of the sub-circuits includes a capacitive output node that is driven between low and high states in a random manner for a time period and an inductive circuit path coupled to the capacitive output node. The inductive circuit path includes a transistor switch and an inductor connected in series to discharge and recharge the output node to a bias supply. A pulse generator circuit generates a pulse width that corresponds to a timing for driving the output node.
Reduced-power dynamic data circuits with wide-band energy recovery
Reduced-power dynamic data circuits with wide-band energy recovery are described herein. In one embodiment, a circuit system comprises at least one sub-circuit in which at least one of the sub-circuits includes a capacitive output node that is driven between low and high states in a random manner for a time period and an inductive circuit path coupled to the capacitive output node. The inductive circuit path includes a transistor switch and an inductor connected in series to discharge and recharge the output node to a bias supply. A pulse generator circuit generates a pulse width that corresponds to a timing for driving the output node.
Three-dimensional logic circuit
Apparatus and associated methods related to a three-dimensional integrated logic circuit that includes a columnar active region. Within the columnar active region resides an interdigitated plurality of semiconductor columns and conductive columns. A plurality of transistors is vertically arranged along each semiconductor column, which extends from a bottom surface of the columnar logic region to a top surface of the columnar logic region. Each of the plurality of transistors of each semiconductor column have source, body, and drain regions horizontally aligned, such that source, drain, and body regions of each of the plurality of transistors are vertically aligned with one another along the semiconductor column. Each of the plurality of conductive columns is adjacent to at least one of the plurality of semiconductor columns and extends along a columnar axis to one or more interconnection layers at the top and/or bottom surfaces of the columnar active layer.
Fault resilient flip-flop with balanced topology and negative feedback
The disclosure relates to a latch including a first inverter with a first pair of field effect transistors (FETs) configured with a first channel width to length ratio (W/L), and a second inverter with a second pair of FETs configured with a second W/L different than the first W/L. Another latch includes first and second inverters; a first negative feedback circuit including first and second FETs coupled between first and second voltage rails, the input of the first inverter coupled between the first and second FETs, and the first and second FETs including gates coupled to an output of the first inverter; and a second negative feedback circuit including third and fourth FETs coupled between the first and second voltage rails, the input of the second inverter coupled between the third and fourth FETs, and the third and fourth FETs including gates coupled to an output of the second inverter.
THREE-DIMENSIONAL LOGIC CIRCUIT
Apparatus and associated methods related to a three-dimensional integrated logic circuit that includes a columnar active region. Within the columnar active region resides an interdigitated plurality of semiconductor columns and conductive columns. A plurality of transistors is vertically arranged along each semiconductor column, which extends from a bottom surface of the columnar logic region to a top surface of the columnar logic region. Each of the plurality of transistors of each semiconductor column have source, body, and drain regions horizontally aligned, such that source, drain, and body regions of each of the plurality of transistors are vertically aligned with one another along the semiconductor column. Each of the plurality of conductive columns is adjacent to at least one of the plurality of semiconductor columns and extends along a columnar axis to one or more interconnection layers at the top and/or bottom surfaces of the columnar active layer.
Computer product for making a semiconductor device
A computer program product, including a non-transitory, computer-readable medium containing instructions therein which, when executed by at least one processor, cause the at least one processor to perform a performance analysis of a network of interconnected nodes, the nodes configured to perform corresponding logic functions. The performance analysis includes, for a pipeline node in the network, calculating a pre-charging finish time of the pipeline node based on an evaluation finish time of a fanout node of the pipeline node and an acknowledge output time parameter of the fanout node. The performance analysis further includes, for the pipeline node in the network, calculating a cycle time of the pipeline node based on the calculated pre-charging finish time and an evaluation finish time of a fanin node of the pipeline node.