A multi-chip package comprising an interconnection substrate; a first semiconductor IC chip over the interconnection substrate, wherein the first semiconductor IC chip comprises a first silicon substrate, a plurality of first metal vias passing through the first silicon substrate, a plurality of first transistors on a top surface of the first silicon substrate and a first interconnection scheme over the first silicon substrate, wherein the first interconnection scheme comprises a first interconnection metal layer over the first silicon substrate, a second interconnection metal layer over the first interconnection layer and the first silicon substrate and a first insulating dielectric layer over the first silicon substrate and between the first and second interconnection metal layers; a second semiconductor IC chip over and bonded to the first semiconductor IC chip; and a plurality of second metal vias over and coupling to the interconnection substrate, wherein the plurality of second metal vias are in a space extending from a sidewall of the first semiconductor IC chip.

Provided is a FPGA-based design method for equally dividing an interval, including the following steps: dividing the oscillation periods of a second pulse signal of a crystal oscillator clock of a FPGA board by the number of equally divided sampling pulses, and obtaining the remainder thereof; dividing the remainder by the number of the equally divided sampling pulses to serve as an error within each sampling interval; using a counter to count from the second pulse, and stopping the counting of the counter once whenever the error within the sampling interval, which is accumulated within the second pulse interval, is greater than or equal to the vibration period. Further provided is a FPGA-based design device for equally dividing an interval. The present application makes full use of the feature of interval equal division calculation, has high precision, and is easy to implement.

A semiconductor device, able to be selectively configured to perform one or more user defined logic functions, includes a semiconductor die and a selectable power regulator. The semiconductor die, in one aspect, includes a first region and a second region. The first region is operatable to perform a first set of logic functions based on a first power domain having a first voltage. The second region is configured to perform a second set of logic functions based on a second power domain having a second voltage. The selectable power regulator, in one embodiment, provides the second voltage for facilitating the second power domain in the second region of the semiconductor die in response to at least one enabling input from the first region of the semiconductor die.

A multi-chip package comprising an interconnection substrate; a first semiconductor IC chip over the interconnection substrate, wherein the first semiconductor IC chip comprises a first silicon substrate, a plurality of first metal vias passing through the first silicon substrate, a plurality of first transistors on a top surface of the first silicon substrate and a first interconnection scheme over the first silicon substrate, wherein the first interconnection scheme comprises a first interconnection metal layer over the first silicon substrate, a second interconnection metal layer over the first interconnection layer and the first silicon substrate and a first insulating dielectric layer over the first silicon substrate and between the first and second interconnection metal layers; a second semiconductor IC chip over and bonded to the first semiconductor IC chip; and a plurality of second metal vias over and coupling to the interconnection substrate, wherein the plurality of second metal vias are in a space extending from a sidewall of the first semiconductor IC chip.

A semiconductor device, able to be selectively configured to perform one or more user defined logic functions, includes a semiconductor die and a selectable power regulator. The semiconductor die, in one aspect, includes a first region and a second region. The first region is operatable to perform a first set of logic functions based on a first power domain having a first voltage. The second region is configured to perform a second set of logic functions based on a second power domain having a second voltage. The selectable power regulator, in one embodiment, provides the second voltage for facilitating the second power domain in the second region of the semiconductor die in response to at least one enabling input from the first region of the semiconductor die.

At least one example embodiment provides a programmable logic device comprising: a plurality of reconfigurable slots programmed to execute functions requested by a plurality of users, the plurality of reconfigurable slots allocated among the plurality of users; a memory divided into a plurality of memory segments, the plurality of memory segments allocated among the plurality of reconfigurable slots; and a memory management circuit configured to dynamically adjust the plurality of memory segments based on at least one of activity or memory requirements of the plurality of reconfigurable slots.

Systems or methods of the present disclosure may include a programmable logic device having a first portion of programmable elements configured to implement a user logic. The programmable logic device also includes a second portion of the programmable elements. The second portion is configured to implement an infrastructure processing unit (IPU) to enable the first portion of programmable elements to interface with a plurality of accelerator engines. The IPU is to receive a chained command to cause two or more accelerator engines of the plurality of accelerator engines to perform sequential operations on a data packet in response to the chained command.

A bit line (BL) may be coupled at a first end to a BL driver (BLD) and at a second end to a BL receiver (BLR). The BL include a plurality of sections and each BL section may be coupled to at least one corresponding sectional configuration memory latch controlled by: at least one sectional word line write (WLW-k) signal, which when asserted enables data to be written into the at least one corresponding sectional configuration memory latch when a corresponding tri-stateable sectional driver (SD-k) is activated, and at least one sectional word line read (WLR-k) signal, which when asserted enables data to be from the at least one corresponding sectional configuration memory latch when the corresponding sectional pull-up (PU-k) is activated.

A 3D field programmable gate array (FPGA) system, and method of manufacture therefor, includes: a field programmable gate array (FPGA) die having a configurable power on reset (POR) unit; a heterogeneous integrated circuit die coupled to the FPGA die; and a 3D power on reset (POR) output configured by the configurable POR unit for initializing the FPGA die and the heterogeneous integrated circuit die.

A field-programmable gate array (FPGA) architecture capable of performing immutable hardware Root-of-Trust updates and patches. In embodiments, the architecture utilizes the dielectric breakdown mechanism of magneto tunnel junctions (MTJ) to operate both as: 1) multi-time programmable (MTP) configuration memory for reconfigurable FPGA designs, and 2) one-time programmable (OTP) memory for FPGA Root-of-Trust sections.