The electronic circuit for multiphase clock skew calibration of at least one example embodiment provides a novel low power solution to detect clock skew errors with very high accuracy, of the order of a few femto seconds, and corrects clock skew errors and decreases and/or minimizes high frequency jitter in a data path of the electronic circuit.

A delay circuit includes: a plurality of delay units that are serially coupled with each other in a form of loop and sequentially delay an input signal of the delay circuit; an input control unit that selects a delay unit to receive the input signal of the delay circuit among the plurality of the delay units; and an output control unit that controls an output signal of a predetermined delay unit among the plurality of the delay units to be outputted as an output signal of the delay circuit, when the output signal of the predetermined delay unit is enabled N times, where N is an integer equal to or greater than 0.

A voltage controlled oscillator (VCO) in a frequency synthesizer generates an output signal having a target frequency by being coarse tuned in accordance with a channel code derived through a binary tree search. Thereafter, the output signal of the VCO may be further tuned using a phase lock loop (PLL) circuit. Each stage of the binary tree search includes a comparison step that determines a channel code bit, and another step that confirms that the channel code converges to a final channel code within an established stage range value.

A first circuit includes a first chain of identical stages defining first and second delay lines. A second circuit includes a second chain of identical stages defining third and fourth delay lines. The stages of the second chain are identical to the stages of the first chain. A third circuit selectively couples one of the third delay line, the fourth delay line, or a first input of the third circuit to an input of the first circuit.

The present description concerns a random number generation circuit (2) of correlated sampling ring oscillator type comprising: two identical ring oscillators (RO1, R02) implemented in CMOS-on-FDSOI technology; a circuit (104) sampling and storing an output (O1) of one of the two oscillators (RO1) at a frequency of the other one of the two oscillators (R02) and delivering a corresponding binary signal (Beat); and a circuit (200) controlling back gates of PMOS and NMOS transistors of at least one delay element of at least one of the two oscillators (RO1, R02) based on a period difference between the two oscillators (RO1, R02).

A timing adjustment method for a drive circuit, including: a rise detector for a rise start when a voltage-driven semiconductor element is turned off; a timing signal output unit outputting a speed change timing signal after a set delay time has elapsed from the rise start; and a conduction controller for a conduction control terminal of the semiconductor element using the timing signal, comprises: defining an estimated terminal voltage of the conduction control terminal when a rise completion time elapses; increasing a delay time by a predetermined unit time, and changing the drive signal to a turning off level again, when the conduction control terminal doesn't fall below the estimated terminal voltage after the drive signal is changed to a turning off level before the level is inverted; and determining a delay time, when the conduction control terminal falls below the estimated terminal voltage initially, as a set value.

A delay circuit includes: a plurality of delay units that are serially coupled with each other in a form of loop and sequentially delay an input signal of the delay circuit; an input control unit that selects a delay unit to receive the input signal of the delay circuit among the plurality of the delay units; and an output control unit that controls an output signal of a predetermined delay unit among the plurality of the delay units to be outputted as an output signal of the delay circuit, when the output signal of the predetermined delay unit is enabled N times, where N is an integer equal to or greater than 0.

A timing adjustment method for a drive circuit, including: a rise detector for a rise start when a voltage-driven semiconductor element is turned off; a timing signal output unit outputting a speed change timing signal after a set delay time has elapsed from the rise start; and a conduction controller for a conduction control terminal of the semiconductor element using the timing signal, comprises: defining an estimated terminal voltage of the conduction control terminal when a rise completion time elapses; increasing a delay time by a predetermined unit time, and changing the drive signal to a turning off level again, when the conduction control terminal doesn't fall below the estimated terminal voltage after the drive signal is changed to a turning off level before the level is inverted; and determining a delay time, when the conduction control terminal falls below the estimated terminal voltage initially, as a set value.

The present description concerns a random number generation circuit (2) of correlated sampling ring oscillator type comprising: two identical ring oscillators (RO1, R02) implemented in CMOS-on-FDSOI technology; a circuit (104) sampling and storing an output (O1) of one of the two oscillators (RO1) at a frequency of the other one of the two oscillators (RO2) and delivering a corresponding binary signal (Beat); and a circuit (200) controlling back gates of PMOS and NMOS transistors of at least one delay element of at least one of the two oscillators (RO1, RO2) based on a period difference between the two oscillators (RO1, RO2).