Patent classifications
H03K3/356
INPUT SUPPLY CIRCUIT AND METHOD FOR OPERATING AN INPUT SUPPLY CIRCUIT
Embodiments of input supply circuits and methods for operating an input supply circuit are described. In one embodiment, an input supply circuit includes a bias circuit configured to define a voltage threshold in response to an input signal, and an input buffer configured to generate an output signal in response to the voltage threshold. Other embodiments are also described.
Level shifter
A level shifter includes a control circuit and a bias circuit. The control circuit receives a bias voltage, a first signal associated with a first voltage domain, and supply voltages associated with a second voltage domain, and outputs a second signal that is associated with the second voltage domain. The bias circuit generates the bias voltage that is indicative of the duty cycle of the second signal, and provides the bias voltage to the control circuit to control the duty cycle of the second signal. The duty cycle of the second signal is controlled such that a difference between a duty cycle of the first signal and an inverse of the duty cycle of the second signal is less than a tolerance limit.
CLOCK ENABLER CIRCUIT
An unnecessary circuit operation in a clock enabler circuit accompanying toggling of a clock signal is suppressed. A state holding unit performs a holding operation of a state as to whether or not to output an output clock signal according to an internal clock signal. A clock signal output unit controls output of the output clock signal according to the state held in the state holding unit. A control unit supplies, to the state holding unit, the internal clock signal and a value of the state that are necessary for the holding operation in the state holding unit on a basis of a clock signal and a clock enable signal from an outside.
HIGH VOLTAGE SWITCHING CIRCUITRY FOR A CROSS-POINT ARRAY
A system includes a cross-point memory array and a decoder circuit coupled to the cross-point memory array. The decoder circuit includes a predecoder having predecode logic to generate a control signal and a level shifter circuit to generate a voltage signal. The decoder circuit further includes a post-decoder coupled to the predecoder, the post-decoder including a first stage and a second stage coupled to the first stage, the control signal to control the first stage and the second stage to route the voltage signal through the first stage and the second stage to a selected conductive array line of a plurality of conductive array lines coupled to a memory array.
BIASED TRANSISTOR MODULE
A biased-transistor-module comprising: a module-input-terminal; a module-output-terminal; a reference-terminal; a module-supply-terminal configured to receive a supply voltage; a module-reference-voltage-terminal configured to receive a module reference voltage; a main-transistor having a main-control-terminal, a main-first-conduction-channel-terminal and a main-second-conduction-channel-terminal, wherein the main-first-conduction-channel-terminal is connected to the module-output-terminal, and the main-second-conduction-channel-terminal is connected to the reference-terminal, and the main-control-terminal is connected to an input-signal-node, wherein the input-signal-node is connected to the module-input-terminal; and a bias-circuit. The bias-circuit comprises: a first-bias-transistor; a first-bias-resistor; a second-bias-transistor; and a second-bias-resistor.
BIASED TRANSISTOR MODULE
A biased-transistor-module comprising: a module-input-terminal; a module-output-terminal; a reference-terminal; a module-supply-terminal configured to receive a supply voltage; a module-reference-voltage-terminal configured to receive a module reference voltage; a main-transistor having a main-control-terminal, a main-first-conduction-channel-terminal and a main-second-conduction-channel-terminal, wherein the main-first-conduction-channel-terminal is connected to the module-output-terminal, and the main-second-conduction-channel-terminal is connected to the reference-terminal, and the main-control-terminal is connected to an input-signal-node, wherein the input-signal-node is connected to the module-input-terminal; and a bias-circuit. The bias-circuit comprises: a first-bias-transistor; a first-bias-resistor; a second-bias-transistor; and a second-bias-resistor.
SIGNAL TRANSMISSION DEVICE
This invention, is concerning a signal voltage device, in which transformers 22a, 22b and a reception circuit 24 are formed on the same chip, and accordingly, no ESD protective element connected to a transformer connection terminal of the reception circuit 24 is required, and negative pulses generated in reception-side inductors 11 can be used in signal transmission. Signal transmission using both positive pulses and negative pulses is made possible as a result, and a stable signal transmission operation can be carried out even in a case where delay time varies in a signal detection circuit. Further, a reception circuit of low power consumption can be configured by using a single-ended Schmitt trigger circuit 14 in the signal detection circuit.
CES-BASED LATCHING CIRCUITS
According to one embodiment of the present disclosure, a device comprises a latching circuitry, where the latching circuitry comprises at least one correlated electron random access memory (CeRAM) element. The latching circuitry further comprises a control circuit coupled to the at least one CeRAM element. The control circuit is configured to receive at least one control signal. Based on the at least one control signal, perform at least one of storing data into the latching circuitry and outputting data from the latching circuitry.
Semiconductor device
A semiconductor device includes: a first latch circuit that includes a first inverting circuit, a second inverting circuit, a third inverting circuit, and a fourth inverting circuit; a first first-type well region; a second first-type well region; and a second-type well region. In a plan view, a distance between a drain of a first-type MOS transistor in the first inverting circuit and a drain of a first-type MOS transistor in the third inverting circuit is longer than a distance between the drain of the first-type MOS transistor in the first inverting circuit and a drain of a first-type MOS transistor in the fourth inverting circuit.
A DYNAMIC D FLIP-FLOP WITH AN INVERTED OUTPUT
A dynamic D flip-flop with an inverted output involves an input end (101) used for receiving input data; an output end (102) used for providing output data to respond to the input data; a clock signal end (103) used for receiving a clock signal; a first latch (104) used for latching the input data from the input end (101) and performing inverting transmission on the input data under the control of the clock signal; a second latch (105) used for latching data from the first latch (104) and performing inverting transmission on the data latched by the first latch (104) under the control of the clock signal; and an inverter (106) used for performing inverting output on the data received from the second latch (105), the first latch (104), the second latch (105), and the inverter (106) being sequentially connected in series between the input end and the output end.