According to one embodiment, a semiconductor device includes a first switch element including a first end to which a first voltage is applied, and a second end and a gate electrically coupled to a first node, a second switch element including a first end to which a second voltage is applied, and a second end and a gate electrically coupled to the first node, a third switch element including a first end to which the second voltage is applied, a second end electrically coupled to a second node, and a gate coupled to the first node, a fourth switch element including a gate coupled to the second node, and a first terminal electrically coupled to a first end of the fourth switch element and outputting a signal based on a voltage of the second node.

A comparator including: first and second input transistors connected to control signals at first and second nodes of the comparator; latch circuitry; at least one controllable offset-correction component having an input terminal and connected to control the signal at one of the first and second nodes based on an offset-correction signal provided at its input terminal; for each controllable offset-correction component, an offset correction circuit configured to provide the offset-correction signal provided at its input terminal; and control circuitry. The control circuitry controls the at least one offset-correction circuit to: control an amount by which the offset-correction signal is adjusted; and/or in a bypass operation, connect the input terminal of the at least one controllable offset-correction component to a bypass-operation reference voltage supply; and/or in a maintenance operation, control the charging-operation voltage supply and/or the bypass-operation voltage supply to control leakage of the charge stored on the holding capacitor.

Receiver circuitry for a communication system includes signal processing circuitry, voltage digital-to-analog converter (DAC) circuitry, and slicer circuitry. The signal processing circuitry receives a data signal and generate a processed data signal. The voltage DAC circuitry generates a first threshold reference voltage. The slicer circuitry is coupled to an output of the signal processing circuitry. The slicer circuitry includes a capture flip-flop (CapFF) circuit that receives the processed data signal and the first threshold reference voltage. The CapFF circuit further generates a first data signal. The first CapFF circuit includes a first offset compensation circuit that adjusts a parasitic capacitance of the first CapFF circuit.

A multi-phase voltage converter has a plurality of integrated circuits (ICs), and a controller. Each IC has a control pin to receive a control signal, a monitoring pin and a temperature sensing circuit, the controller has a monitoring pin connected to the monitoring pin of each of the plurality of ICs to receive a monitoring signal. The temperature sensing circuit is connected to or disconnected from the monitoring pin of the corresponding one of the plurality of ICs in response to the control signal and the monitoring signal.

A multi-phase voltage converter has a plurality of integrated circuits (ICs), and a controller. Each IC has a control pin to receive a control signal, a monitoring pin and a temperature sensing circuit, the controller has a monitoring pin connected to the monitoring pin of each of the plurality of ICs to receive a monitoring signal. The temperature sensing circuit is connected to or disconnected from the monitoring pin of the corresponding one of the plurality of ICs in response to the control signal and the monitoring signal.

A method for temperature detection and an electronic circuit for temperature detection are described. The method comprises providing a first temperature-dependent signal (Vctat) having a first temperature coefficient; providing a second temperature-dependent signal (Iptat) having a second temperature coefficient; generating a plurality of comparison signals (Vptat(1)-Vptat(n)) on the basis of the second temperature-dependent signal (Iptat), wherein each of the plurality of comparison signals Vptat(i)) represents a respective temperature (T(1)-T(n)); comparing the first temperature-dependent signal (Vctat) with at least one of the plurality of comparison signals (Vptat(1)-Vptat(n)); and outputting temperature information (TEMP) on the basis of the comparing.

A method for temperature detection and an electronic circuit for temperature detection are described. The method comprises providing a first temperature-dependent signal (Vctat) having a first temperature coefficient; providing a second temperature-dependent signal (Iptat) having a second temperature coefficient; generating a plurality of comparison signals (Vptat(1)-Vptat(n)) on the basis of the second temperature-dependent signal (Iptat), wherein each of the plurality of comparison signals Vptat(i)) represents a respective temperature (T(1)-T(n)); comparing the first temperature-dependent signal (Vctat) with at least one of the plurality of comparison signals (Vptat(1)-Vptat(n)); and outputting temperature information (TEMP) on the basis of the comparing.

A semiconductor integrated circuit includes: one input terminal; multiple output terminals; multiple first current control elements connected between the input terminal and the respective output terminals; a control circuit that controls the first current control elements; a fault detection circuit that includes multiple voltage comparator circuits each of which compares a voltage proportional to a voltage of one of the output terminals with a predetermined threshold voltage and that detects an open-circuit state or a short-circuit state of the output terminals; an external terminal connected to an external resistor; a voltage convertor circuit that generates the threshold voltage according to a voltage of the external terminal that is generated by flowing a current through the external resistor, the threshold voltage being applied to an input terminal of each of the voltage comparator circuits; and a detection result output terminal for outputting a detection result by the fault detection circuit.

A semiconductor integrated circuit includes: one input terminal; multiple output terminals; multiple first current control elements connected between the input terminal and the respective output terminals; a control circuit that controls the first current control elements; a fault detection circuit that includes multiple voltage comparator circuits each of which compares a voltage proportional to a voltage of one of the output terminals with a predetermined threshold voltage and that detects an open-circuit state or a short-circuit state of the output terminals; an external terminal connected to an external resistor; a voltage convertor circuit that generates the threshold voltage according to a voltage of the external terminal that is generated by flowing a current through the external resistor, the threshold voltage being applied to an input terminal of each of the voltage comparator circuits; and a detection result output terminal for outputting a detection result by the fault detection circuit.

A comparison control circuit is adapted to analog-to-digital converters and low-dropout regulators. The comparison control circuit includes a comparator, a Schmitt trigger, a capacitor set and a logic circuit. The comparator is configured to output a comparison signal according to a first input signal and a second input signal, wherein the comparison signal is a first high voltage potential or a first low voltage potential. The Schmitt trigger is configured to output a trigger signal according to the comparison signal and a voltage potential range, wherein the voltage potential range is in a range from the first low voltage potential to the first high voltage potential. The capacitor set is configured to adjust the second input signal when being controlled. The logic circuit is configured to control the capacitor set according to the trigger signal to correspondingly adjust the second input signal.