The invention relates to a detection apparatus (12) for detecting photons. The detection apparatus comprises a pile-up determining unit (15) for determining whether detection signal pulses being indicative of detected photons are caused by a pile-up event or by a non-pile-up event, wherein a detection values generating unit (16) generates detection values depending on the detection signal pulses and depending on the determination whether the respective detection signal pulse is caused by a pile-up event or by a non-pile-up event. In particular, the detection values generating unit can be adapted to reject the detection signal pulses caused by pile-up events while generating the detection values. This allows for an improved quality of the generated detection values.

A circuit and a method for detecting a current zero-crossing point, and a circuit and method for detecting a load voltage are disclosed. The circuit for detecting current zero-crossing point includes: a load power supply circuit (14), a voltage-dividing resistor (16), a transistor switch (15), a zero-crossing detection circuit (19); the load power supply circuit (14) includes: a load (11), a diode (13), and an inductor (12); one end of the load power supply circuit (14) is connected with the operating voltage input terminal, the other end of the load power supply circuit (14) is connected with a first end of the transistor switch (15) and a first end of the voltage-dividing resistor (16), a second end of the voltage-dividing resistor (16) and a second end of the transistor switch (15) are connected with the ground, the load voltage is controlled by the transistor switch (15), the voltage-dividing terminal of the voltage-dividing resistor (16) is connected to a signal input terminal of the zero-crossing detection circuit (19), the zero-crossing detection circuit (19) is used to determine whether the current of the diode (13) crosses zero to obtain the on time of the diode (13), and the circuit for detecting load voltage uses the on time of the diode (13) and the on time of the transistor switch (15) to obtain the load voltage. The circuits are simple, but with high detection efficiency and low cost.

Non-ideal diodes have a non-zero resistance across a PN junction when the junction is forward biased. When a diode comprising a power supply has a voltage drop across the junction that exceeds a predetermined threshold, the threshold-exceeding voltage drop trips a comparator, the output of which controls a switch between a power supply and a load.

Artificial neuromorphic circuit includes synapse circuit and post-neuron circuit. Synapse circuit includes phase change element, first switch, and second switch. Phase change element includes first terminal and second terminal. First switch includes first terminal and second terminal. Second switch includes first terminal, second terminal, and control terminal. First switch is configured to receive first pulse signal. Second switch is coupled to phase change element and first switch. Second switch is configured to receive second pulse signal. Post-neuron circuit includes capacitor and input terminal. Input terminal of post-neuron circuit charges capacitor in response to first pulse signal. Post-neuron circuit generates firing signal based on voltage level of capacitor and threshold voltage. Post-neuron circuit generates control signal based on firing signal. Control signal controls turning on of second switch. Second pulse signal flows through second switch to control state of phase change element to determine weight of artificial neuromorphic circuit.

Artificial neuromorphic circuit includes synapse circuit and post-neuron circuit. Synapse circuit includes phase change element, first switch, and second switch. Phase change element includes first terminal and second terminal. First switch includes first terminal and second terminal. Second switch includes first terminal, second terminal, and control terminal. First switch is configured to receive first pulse signal. Second switch is coupled to phase change element and first switch. Second switch is configured to receive second pulse signal. Post-neuron circuit includes capacitor and input terminal. Input terminal of post-neuron circuit charges capacitor in response to first pulse signal. Post-neuron circuit generates firing signal based on voltage level of capacitor and threshold voltage. Post-neuron circuit generates control signal based on firing signal. Control signal controls turning on of second switch. Second pulse signal flows through second switch to control state of phase change element to determine weight of artificial neuromorphic circuit.

The present application relates generally to silicon photomultiplier (SiPM) detector arrays. In one aspect, there is a system including an array of cells each including a single-photon avalanche diode (SPAD) reverse-biased above a breakdown voltage of the SPAD. The system may further include a trigger network configured to generate pulses on a trigger line in response to SPADs of the array undergoing breakdown. The system may still further include a pulse-width filter configured to block pulses on the trigger line whose pulse width is less than a threshold width.

A circuit and a method for detecting a current zero-crossing point, and a circuit and method for detecting a load voltage are disclosed. The circuit for detecting current zero-crossing point includes: a load power supply circuit, a voltage-dividing resistor, a transistor switch, a zero-crossing detection circuit; the load power supply circuit includes: a load, a diode, and a transformer; one end of a primary winding of the transformer is connected with the operating voltage input terminal, the other end of the primary winding of the transformer is connected with a first end of the transistor switch and a first end of the voltage-dividing resistor, a second end of the voltage-dividing resistor and a second end of the transistor switch are connected with the ground, the load voltage is controlled by the transistor switch.

The present application relates generally to silicon photomultiplier (SiPM) detector arrays. In one aspect, there is a system including an array of cells each including a single-photon avalanche diode (SPAD) reverse-biased above a breakdown voltage of the SPAD. The system may further include a trigger network configured to generate pulses on a trigger line in response to SPADs of the array undergoing breakdown. The system may still further include a pulse-width filter configured to block pulses on the trigger line whose pulse width is less than a threshold width.

A circuit and a method for detecting a current zero-crossing point, and a circuit and method for detecting a load voltage are disclosed. The circuit for detecting current zero-crossing point includes: a load power supply circuit, a voltage-dividing resistor, a transistor switch, a zero-crossing detection circuit; the load power supply circuit includes: a load, a diode, and a transformer; one end of a primary winding of the transformer is connected with the operating voltage input terminal, the other end of the primary winding of the transformer is connected with a first end of the transistor switch and a first end of the voltage-dividing resistor, a second end of the voltage-dividing resistor and a second end of the transistor switch are connected with the ground, the load voltage is controlled by the transistor switch.

The present application relates generally to silicon photomultiplier (SiPM) detector arrays. In one aspect, there is a system including an array of cells each including a single-photon avalanche diode (SPAD) reverse-biased above a breakdown voltage of the SPAD. The system may further include a trigger network configured to generate pulses on a trigger line in response to SPADs of the array undergoing breakdown. The system may still further include a pulse-width filter configured to block pulses on the trigger line whose pulse width is less than a threshold width.