Provided is a semiconductor integrated circuit including an oscillation circuit configured to output an oscillation signal, a heater configured to heat the oscillation circuit, a temperature sensor configured to detect a temperature of the oscillation circuit, and a nonvolatile memory configured to store temperature correction data. The oscillation circuit controls a frequency of the oscillation signal based on an output signal of the temperature sensor and the temperature correction data.

Provided is a semiconductor integrated circuit including an oscillation circuit configured to output an oscillation signal, a heater configured to heat the oscillation circuit, a temperature sensor configured to detect a temperature of the oscillation circuit, and a nonvolatile memory configured to store temperature correction data. The oscillation circuit controls a frequency of the oscillation signal based on an output signal of the temperature sensor and the temperature correction data.

An oven-controlled crystal oscillator according to one or more embodiments includes a core section having at least an oscillation IC, a crystal resonator, and a heater IC. The core section is hermetically encapsulated in a heat-insulating package. The core section is supported by the package via a core substrate. The core substrate is connected to the package outside a region where the core section is provided in plan view.

An oven-controlled crystal oscillator according to one or more embodiments includes a core section having at least an oscillation IC, a crystal resonator, and a heater IC. The core section is hermetically encapsulated in a heat-insulating package. The core section is supported by the package via a core substrate. The core substrate is connected to the package outside a region where the core section is provided in plan view.

A thin-film heater according to one or more embodiments may include an insulated substrate and metal wiring patterned thereon to extend between both terminals of the metal wiring. The metal wiring has a resistance of 10Ω or less between the terminals. The metal wiring includes a heat-generating layer made of a material that recrystallizes at a temperature of 200° C. or lower.

An oven-controlled crystal oscillator according to one or more embodiments may include a core section having a crystal resonator, an oscillator IC and a heating IC, wherein the core section is supported by a package via an interposer, and furthermore the core section is hermetically encapsulated in the package.

The present disclosure provides a real-time correction method for an Oven Controlled Crystal (Xtal) Oscillator (OCXO) and an electromagnetic receiver. The real-time correction method for an OCXO includes: performing frequency multiplication on a reference clock signal to generate a first measurement signal and a second measurement signal; identifying a rising edge of each pulse per second on the basis of the first measurement signal to obtain a gate time T; obtaining a frequency of the second measurement signal according to the gate time T; and adjusting a frequency of the reference clock signal at least on the basis that an absolute value of a difference between two adjacent frequencies obtained of the second measurement signal is greater than a standard frequency difference.

The present disclosure provides a real-time correction method for an Oven Controlled Crystal (Xtal) Oscillator (OCXO) and an electromagnetic receiver. The real-time correction method for an OCXO includes: performing frequency multiplication on a reference clock signal to generate a first measurement signal and a second measurement signal; identifying a rising edge of each pulse per second on the basis of the first measurement signal to obtain a gate time T; obtaining a frequency of the second measurement signal according to the gate time T; and adjusting a frequency of the reference clock signal at least on the basis that an absolute value of a difference between two adjacent frequencies obtained of the second measurement signal is greater than a standard frequency difference.

A vibrator device includes a vibration element including a vibration portion and a fixed portion, a supporting member to which the fixed portion is attached to support the vibration element, and a first substrate to which the supporting member is attached, the supporting member includes a attaching portion attached to the first substrate, and A1≥A2 is satisfied in a case where an area of a rectangular region including the fixed portion is A1 and an area of a rectangular region including the attaching portion is A2 in a plan view seen from a thickness direction of the vibration element.

A vibrator device includes a vibration element including a vibration portion and a fixed portion, a supporting member to which the fixed portion is attached to support the vibration element, and a first substrate to which the supporting member is attached, the supporting member includes a attaching portion attached to the first substrate, and A1≥A2 is satisfied in a case where an area of a rectangular region including the fixed portion is A1 and an area of a rectangular region including the attaching portion is A2 in a plan view seen from a thickness direction of the vibration element.