An image sensor includes a pixel array including a first pixel and a second pixel which are connected to a first column line, and a row driver configured to control a read operation of the second pixel. A voltage of the first column line is determined based on a higher voltage among a voltage of a floating diffusion node of the first pixel and a voltage of a floating diffusion node of the second pixel during the read operation of the second pixel.

An imaging pixel (2) to mitigate cross-talk effects comprises a voltage supply node (VN) to receive a supply voltage (VDD), and an output node (ON) to provide a pixel output signal. The imaging pixel (2) further comprises a photosensitive element (10), and a source follower transistor (31) having a control node coupled to the photosensitive element (10). The source follower transistor (31) is interposed between the voltage supply node (VN) and the output node (ON). The imaging pixel (2) comprises a clamping circuit (20) being interposed between the voltage supply node (VN) and the output node (ON).

The present disclosure relates to a read-out circuit comprising N inputs configured to be connected to N respective outputs of a pixel array of an image sensor, with N being an integer strictly greater than 1; and N analog-to-digital converters organized in K groups, with K being an integer strictly greater than 1 and strictly less than N, and each having a first input coupled to a respective one of the N inputs and a second input. In each group, the second inputs of the analog-to-digital converters of the group are connected together, electrically decoupled from the second inputs of the analog-to-digital converters of the other groups, and configured to receive a first reference signal that is identical for all the analog-to-digital converters of the group.

An image sensing device includes a pixel array including a plurality of unit pixels coupled to a plurality of row lines, wherein at least one of the unit pixels includes a photo-diode for generating photo charges corresponding to an incident light and a transfer transistor for transferring the photo charges to a floating diffusion (FD) node in response to a transfer control signal transferred through a corresponding row line; a row control circuit disposed at a first side of the pixel array and suitable for providing, to the respective row lines, the transfer control signal having a voltage level between a first voltage and a second voltage; and a bias compensation circuit disposed at a second side of the pixel array and suitable for driving the transfer control signal to the second voltage during a reset read-out section of each of the row lines.

A photoelectric conversion device includes a pixel array including pixels arranged in rows and columns, each of the pixels being configured to output a pixel signal, and including an optical filter and a photoelectric conversion unit, wherein the optical filters of different colors are arranged for each rows and each columns, a holding circuit including first holding units for each of the columns, the first holding units being configured to respectively hold the pixel signals read out from the pixels including the optical filters of different colors in one column of the pixel array in parallel, an output signal line, and a readout circuit configured to successively read out the pixel signals of pixels including the optical filters of the same color from the first holding units for each of the columns to the output signal line.

An image sensor comprises a pixel array including a plurality of pixels where a plurality of columns and a plurality of rows are arranged, a read-out circuit generating image data using pixel signals output from pixels corresponding to a row selected from among the plurality of rows, and a plurality of gain adjustment lines provided for every plurality of columns and adjusting gains of pixels of their respective corresponding columns.

To reduce the number of ADCs in a solid-state image sensor that converts an analog pixel signal into a digital signal. An effective pixel generates an analog signal according to an amount of received light as an effective pixel signal using a power supply from a power supply line. A correction signal generation unit generates an analog signal including a noise component generated in the power supply line as a correction signal. A selection unit sequentially selects and outputs the effective pixel signal and the correction signal. An analog-digital converter performs processing of converting the output effective pixel signal into a digital signal and outputting the digital signal as effective pixel data and processing of converting the output correction signal into a digital signal and outputting the digital signal into correction data. A signal processing unit corrects the effective pixel data on the basis of the correction data.

An image sensor and an operation method of the image sensor are disclosed. The image sensor includes a pixel array and a row driver. The pixel array includes a first pixel and a second pixel. Each of the first pixel and the second pixel includes at least one photosensitive element and a switching element configured to transfer charges generated by the at least one photosensitive element to a floating diffusion node. The first pixel and the second pixel are connected to a same column line. The row driver is configured to provide a clamping control signal to the switching element in the first pixel. The clamping control signal transits from a first level to a second level that is less than the first level, during a read period of the second pixel.

An image sensor includes a pixel array including a pixel array comprising a first pixel and a second pixel which are electrically connected to a first column line, a row driver configured to receive a clamp voltage and a selection voltage, select the first pixel based on the clamp voltage and select the second pixel based on the selection voltage. A voltage of the first column line is determined based on a higher voltage among a first output voltage of the first pixel and a second output voltage of the second pixel during a read operation of the second pixel.

An imaging device includes: a semiconductor substrate; pixels arranged two-dimensionally along row and column directions on the substrate; and one or more interconnection layers located on the semiconductor substrate, including a first signal line extending along the column direction and a second signal line to which a multi-level signal is applied. A first pixel includes: a photoelectric converter; a charge storage region; a first interconnection electrically connected to the charge storage region; and a first transistor that includes a first diffusion layer electrically connected to the first signal line and a second diffusion layer electrically connected to the second signal line and that outputs a signal to the first signal line. The first and second signal lines and the first interconnection are arranged in a first interconnection layer. The second signal line is located between the first interconnection and the first signal line, viewed perpendicularly to the substrate.