The present invention discloses an image sensor, an image readout method, and an electronic device. The image sensor comprises: a pixel array and a plurality of readout conversion circuits, the readout conversion circuit comprises: a comparison circuit for comparing an output signal of the column pixel with a ramp signal to obtain a first output signal and a second output signal; a selection module for selecting the first output signal during a first sampling count, and selecting the second output signal during a second sampling count; a counter for counting according to the first output signal and the second output signal to obtain total quantization value of the first sampling count and the second sampling count, so as to obtain actual signal quantization result according to the total quantization value. The image readout speed of the image sensor is improved.

To improve a frame rate in a solid-state imaging element that compares a reference signal and a pixel signal.

The solid-state imaging element includes a differential amplifier circuit, a transfer transistor, and a source follower circuit. The differential amplifier circuit amplifies a difference between the potentials of a pair of input nodes and outputs the difference from an output node. The transfer transistor transfers charge from a photoelectric conversion element to a floating diffusion layer. The auto-zero transistor short-circuits the floating diffusion layer and the output node in a predetermined period. The source follower circuit supplies a potential to one of the pair of input nodes according to a potential of the floating diffusion layer.

To improve a frame rate in a solid-state imaging element that compares a reference signal and a pixel signal.

The solid-state imaging element includes a differential amplifier circuit, a transfer transistor, and a source follower circuit. The differential amplifier circuit amplifies a difference between the potentials of a pair of input nodes and outputs the difference from an output node. The transfer transistor transfers charge from a photoelectric conversion element to a floating diffusion layer. The auto-zero transistor short-circuits the floating diffusion layer and the output node in a predetermined period. The source follower circuit supplies a potential to one of the pair of input nodes according to a potential of the floating diffusion layer.

An event sensing system includes a pixel array including a plurality of event driven pixel circuits configured to be illuminated by incident light. The event driven pixel circuits are configured to generate an event current in response to a detection of an event in the incident light. Output signals of a row of the pixel array are configured to be read out from the row of the pixel array to a line buffer in response to the detection of the event in the incident light. A random number generator is configured to randomly generate a filtering mask. A mask circuit is the output signals of the row of the pixel array from the line buffer and the filtering mask from the random number generator to filter the output signals of the row of the pixel array in response to the filtering mask.

Embodiments of the present disclosure provide a cone-rod dual-modality neuromorphic vision sensor, including: a first preset quantity of voltage-mode active pixel sensor (APS) circuits and a second preset quantity of current-mode APS circuits, where each of the voltage-mode APS circuits includes a first-type photosensitive device, and each of the current-mode APS circuits includes a second-type photosensitive device. The voltage-mode APS can output a target voltage signal representing light intensity information in a target light signal. The obtained target voltage signal represents the light intensity information with a higher precision, and therefore an image with higher quality can be obtained, that is, the image has a higher signal-noise ratio. The voltage-mode APS can output a specified digital signal representing light intensity gradient information in the target light signal, to ensure performance indicators such as an image dynamic range and a shooting speed of the neuromorphic vision sensor, thereby making the neuromorphic vision sensor more stable and robust.

A control method, a camera assembly, and a mobile terminal are provided. The control method includes: obtaining original image data by controlling exposure of the 2D pixel array, where the original image data includes color original image data generated by exposure of the color pixels and panchromatic original image data generated by exposure of the panchromatic pixels; and outputting target image data according to the original image data.

An imaging device capable of reducing a useless region on a substrate is provided. An imaging device including a plurality of substrates to be stacked includes a readout-only circuit disposed on a substrate different from a substrate having a pixel array unit including a plurality of photoelectric conversion elements disposed thereon, and performing an operation of reading out electrical signals obtained through photoelectric conversion in the plurality of photoelectric conversion elements, and a circuit disposed on a substrate different from the substrate having the readout-only circuit disposed thereon and performing an operation other than an operation of the readout-only circuit on the basis of the electrical signals.

An imaging device capable of reducing a useless region on a substrate is provided. An imaging device including a plurality of substrates to be stacked includes a readout-only circuit disposed on a substrate different from a substrate having a pixel array unit including a plurality of photoelectric conversion elements disposed thereon, and performing an operation of reading out electrical signals obtained through photoelectric conversion in the plurality of photoelectric conversion elements, and a circuit disposed on a substrate different from the substrate having the readout-only circuit disposed thereon and performing an operation other than an operation of the readout-only circuit on the basis of the electrical signals.

A photosensitive sensor is capable of operating in a global shutter mode and in a rolling shutter mode. The sensor includes at least one pixel with a photosensitive region configured to photogenerate charges. A first transfer gate is configured to transfer photogenerated charges from the photosensitive region to a transfer node. A source-follower transistor is configured to transmit a reading signal to a read node, in the global shutter mode, in a manner controlled by a potential of the photogenerated charges on the transfer node. A second transfer gate is configured to transfer the photogenerated charges from the photosensitive region to the read node in the rolling shutter mode.

In an embodiment a pixel arrangement includes a photodetector configured to accumulate charge carriers by converting electromagnetic radiation, a transfer transistor electrically coupled to the photodetector, a diffusion node electrically coupled to the transfer transistor, a reset transistor electrically coupled to the diffusion node and to a pixel supply voltage and a sample-and-hold stage including at least a first capacitor and a second capacitor, an input of the sample-and-hold stage being electrically coupled to the diffusion node via an amplifier, wherein the transfer transistor is configured to be pulsed to different voltage levels for transferring parts of the accumulated charge carriers to the diffusion node, wherein at least the second capacitor is configured to store a low conversion gain signal representing a first part of the accumulated charge carriers, and wherein the first capacitor is configured to store a high conversion gain signal representing a remaining part of the accumulated charge carriers.