The present invention discloses an image sensor, an image readout method, and an electronic device. The image sensor comprises: a pixel array and a plurality of readout conversion circuits, the readout conversion circuit comprises: a comparison circuit for comparing an output signal of the column pixel with a ramp signal to obtain a first output signal and a second output signal; a selection module for selecting the first output signal during a first sampling count, and selecting the second output signal during a second sampling count; a counter for counting according to the first output signal and the second output signal to obtain total quantization value of the first sampling count and the second sampling count, so as to obtain actual signal quantization result according to the total quantization value. The image readout speed of the image sensor is improved.

Embodiments of the present disclosure provide a cone-rod dual-modality neuromorphic vision sensor, including: a first preset quantity of voltage-mode active pixel sensor (APS) circuits and a second preset quantity of current-mode APS circuits, where each of the voltage-mode APS circuits includes a first-type photosensitive device, and each of the current-mode APS circuits includes a second-type photosensitive device. The voltage-mode APS can output a target voltage signal representing light intensity information in a target light signal. The obtained target voltage signal represents the light intensity information with a higher precision, and therefore an image with higher quality can be obtained, that is, the image has a higher signal-noise ratio. The voltage-mode APS can output a specified digital signal representing light intensity gradient information in the target light signal, to ensure performance indicators such as an image dynamic range and a shooting speed of the neuromorphic vision sensor, thereby making the neuromorphic vision sensor more stable and robust.

A solid-state imaging device, a method for driving a solid-state imaging device, and an electronic apparatus are provided that are capable of reducing memory circuits of a column reading system, so that the column reading system can achieve a reduced layout area and eventually a reduced size. A column reading circuit includes an AD converting part and a calculating part. The AD converting part is configured to analog-to-digital convert a read-out reset signal and a read-out signal of a pixel signal read to a vertical signal line into an n-bit digital pixel signal. The calculating part includes an n-bit asynchronous counter including a retention circuit with a control logic function, which is configured to obtain a difference between an n-bit read-out reset signal and an n-bit read-out signal produced by the AD conversion performed by the AD converting part.

Imaging devices are disclosed. In one example, an imaging device includes a photoelectric conversion unit with plural photoelectric conversion elements, a detector that outputs a detection signal indicating whether or not an amount of change in the electric signal of each of the photoelectric conversion elements exceeds a predetermined threshold value, a pixel signal generation unit that generates a pixel signal on the basis of the electric signal, a transfer controller that controls transfer of the electric signal to the pixel signal generation unit, and an analog-to-digital converter that converts the pixel signal into a digital signal. The low-potential-side reference potentials of the photoelectric conversion unit, the detector, the pixel signal generation unit, and the analog-to-digital converter, and the off-potential of the transfer controller include three or more potentials having different potential levels.

An image sensor may include a pixel array a pixel array including an active pixel and an optical black pixel, the active pixel configured to generate a first pixel signal, and the optical black pixel configured to generate a second pixel signal, a first biasing circuit configured to bias the first pixel signal based on a first bias voltage, a first analog-to-digital converter configured to convert the biased first pixel signal into a first digital signal, a second biasing circuit configured to bias the second pixel signal based on a second bias voltage, and a second analog-to-digital converter configured to convert the biased second pixel signal into a second digital signal, the second digital signal configured to generate smaller random noise than the first analog-to-digital converter.

To suppress voltage variations due to transistor switching noise in a solid-state image sensor including a transistor that initializes a differentiating circuit. A capacitance supplies a charge corresponding to an amount of variation in a predetermined pixel voltage to a predetermined input terminal. A voltage output unit outputs, as an output voltage, a voltage corresponding to an input voltage at the input terminal from a predetermined output terminal. A reset transistor supplies one of a positive charge or a negative charge during a predetermined period to control the output voltage to an initial value in a case where initialization is instructed. A charge supply unit supplies the other of the positive charge or the negative charge when the predetermined period elapses.

An imaging device according to an embodiment includes: a plurality of pixels (110) each including a photoelectric conversion element (20) and arranged in an array of matrix; a control line group (16) including a plurality of control lines for controlling each of pixels aligned in a row direction, each arranged in each of rows of the array; and a plurality of reading lines (VSL) arranged in each of columns for transferring a pixel signal read from each of pixels aligned in a column direction of the array, wherein the plurality of pixels includes: a first pixel (110GS) controlled by a control signal supplied from a first control line group including control lines in a first number among a plurality of control lines included in the control line group in each of pixels aligned in the row direction in at least one of rows of the array; and a second pixel (110RS) controlled by a control signal supplied from a second control line group including a control line in a second number smaller than the first number among a plurality of control lines included in the control line group.

Provided are an image sensor and a detection system using same, which belong to the field of semiconductor image sensors. The image sensor includes: a first substrate, wherein the first substrate at least includes a photoelectric unit for photoelectric conversion, and N signal transmission channels which are connected to the photoelectric unit, with N being greater than or equal to 1; and a second substrate, which includes N second charge storage units which correspond to the N transmission channels. The transmission channels receive control signals, electrically communicate the photoelectric unit and the second charge storage units, and transfer at least some photo-induced electrons, which are generated in the photoelectric unit, to the second charge storage units. The effect of miniaturization and high integration design of pixels is ensured by means of stacking two substrates; and by means of further providing charge storage units on both of the two substrates, the area of the peripheral region of the pixels can be used, the effect of a higher charge storage amount can be achieved, and the effects such as measurement accuracy can be ensured.

Provided are an image sensor and a detection system using same, which belong to the field of semiconductor image sensors. The image sensor includes: a first substrate, wherein the first substrate at least includes a photoelectric unit for photoelectric conversion, and N signal transmission channels which are connected to the photoelectric unit, with N being greater than or equal to 1; and a second substrate, which includes N second charge storage units which correspond to the N transmission channels. The transmission channels receive control signals, electrically communicate the photoelectric unit and the second charge storage units, and transfer at least some photo-induced electrons, which are generated in the photoelectric unit, to the second charge storage units. The effect of miniaturization and high integration design of pixels is ensured by means of stacking two substrates; and by means of further providing charge storage units on both of the two substrates, the area of the peripheral region of the pixels can be used, the effect of a higher charge storage amount can be achieved, and the effects such as measurement accuracy can be ensured.

A radiation detector includes control and data lines extending respectively in mutually-orthogonal first and second directions, photoelectric conversion parts respectively in regions defined by the control and data lines, noise detecting parts outside a region including the photoelectric conversion parts, a control circuit inputting control signals to first and second thin film transistors located respectively in the photoelectric conversion and noise detecting parts, a signal detection circuit reading image data and noise signals respectively from the photoelectric conversion and noise detecting parts, and an image configuration circuit configuring a radiation image based on the signals that are read. The signals from the photoelectric conversion parts adjacent to the noise detecting parts are not read and/or are not used by the image configuration circuit when configuring the radiation image, and/or the photoelectric conversion parts adjacent to the noise detecting parts are not electrically connected with the control and/or signal detection circuits.