Provided is an imaging device that includes a plurality of pixels, each of the plurality of pixels including a photoelectric conversion unit configured to accumulate charges generated by an incident light, a first holding unit and a second holding unit configured to hold the charges, an amplification unit configured to output a signal based on the charges, a first transfer switch provided between the photoelectric conversion unit and the first holding unit, a second transfer switch provided between the photoelectric conversion unit and the second holding unit, a third transfer switch provided between the first holding unit and the amplification unit, and a fourth transfer switch provided between the second holding unit and the amplification unit, and outputs a signal including a signal based on actual signal charges and a signal including a signal based on false signal charges.

The present disclosure provides a bidirectional TDI line image sensor. The bidirectional TDI line image sensor according to one embodiment of the present invention comprises: a pixel unit, which has N line sensors having M CCDs arranged in a line and being arranged in a scan direction, moves, in the scan direction, charges accumulated in the respective columns of the line sensors, and accumulates the same; and an output unit for parallelly receiving as inputs the charges accumulated in the pixel unit from the respective columns, performing analog-to-digital conversion on and storing the charges, and then sequentially outputting same.

The present disclosure provides a bidirectional TDI line image sensor. The bidirectional TDI line image sensor according to one embodiment of the present invention comprises: a pixel unit, which has N line sensors having M CCDs arranged in a line and being arranged in a scan direction, moves, in the scan direction, charges accumulated in the respective columns of the line sensors, and accumulates the same; and an output unit for parallelly receiving as inputs the charges accumulated in the pixel unit from the respective columns, performing analog-to-digital conversion on and storing the charges, and then sequentially outputting same.

Image sensors with precharge boost are disclosed herein. An example image sensor may include pixels that each include a photodiode to receive image light and produce image charge in response, a floating diffusion to receive the image charge, a transfer gate to couple the photodiode to the floating diffusion in response to a transfer control signal, a reset gate to couple a reset voltage to the floating diffusion in response to a reset control signal, and a boost capacitor coupled between the floating diffusion and a boost voltage source, wherein, during a precharge operation, the boost voltage is provided to the boost capacitor for a portion of time the transfer gate is enabled and while the reset gate is disabled.

Image sensors with precharge boost are disclosed herein. An example image sensor may include pixels that each include a photodiode to receive image light and produce image charge in response, a floating diffusion to receive the image charge, a transfer gate to couple the photodiode to the floating diffusion in response to a transfer control signal, a reset gate to couple a reset voltage to the floating diffusion in response to a reset control signal, and a boost capacitor coupled between the floating diffusion and a boost voltage source, wherein, during a precharge operation, the boost voltage is provided to the boost capacitor for a portion of time the transfer gate is enabled and while the reset gate is disabled.

Provided is an imaging device that includes a plurality of pixels, each of the plurality of pixels including a photoelectric conversion unit configured to accumulate charges generated by an incident light, a first holding unit and a second holding unit configured to hold the charges, an amplification unit configured to output a signal based on the charges, a first transfer switch provided between the photoelectric conversion unit and the first holding unit, a second transfer switch provided between the photoelectric conversion unit and the second holding unit, a third transfer switch provided between the first holding unit and the amplification unit, and a fourth transfer switch provided between the second holding unit and the amplification unit, and outputs a signal including a signal based on actual signal charges and a signal including a signal based on false signal charges.

The present invention relates to technical field of analog integrated circuit design. TDI function is better realized by CMOS image sensor and it improves scanning frequency of the CMOS-TDI image sensor and extends application range of TDI technique. To this end, the present invention proposes a technical solution of a current accumulative pixel structure for CMOS-TDI image sensor which comprises a photodiode, four MOS transistors M1, M2, M3, M4, four switches S1, S2, S3, S4, and two capacitors C1, C2; the connection relationship thereof is denoted below: the anode of the photodiode D1 is connected to a ground wire, while the cathode thereof is connected to an input end; the drain and gate of the transistor M1 are both connected with the input end, while the source thereof is connected with a power source VDD. The current invention mainly finds its application in analog integration circuit design.

The present invention relates to technical field of analog integrated circuit design. TDI function is better realized by CMOS image sensor and it improves scanning frequency of the CMOS-TDI image sensor and extends application range of TDI technique. To this end, the present invention proposes a technical solution of a current accumulative pixel structure for CMOS-TDI image sensor which comprises a photodiode, four MOS transistors M1, M2, M3, M4, four switches S1, S2, S3, S4, and two capacitors C1, C2; the connection relationship thereof is denoted below: the anode of the photodiode D1 is connected to a ground wire, while the cathode thereof is connected to an input end; the drain and gate of the transistor M1 are both connected with the input end, while the source thereof is connected with a power source VDD. The current invention mainly finds its application in analog integration circuit design.