A solid state image sensor includes a pixel array, as well as charge-to-voltage converters, reset gates, and amplifiers each shared by a plurality of pixels in the array. The voltage level of the reset gate power supply is set higher than the voltage level of the amplifier power supply. Additionally, charge overflowing from photodetectors in the pixels may be discarded into the charge-to-voltage converters. The image sensor may also include a row scanner configured such that, while scanning a row in the pixel array to read out signals therefrom, the row scanner resets the charge in the photodetectors of the pixels sharing a charge-to-voltage converter with pixels on the readout row. The charge reset is conducted simultaneously with or prior to reading out the signals from the pixels on the readout row.

A solid-state imaging device comprises a first pixel group includes a first photoelectric conversion unit that converts into electric charges reflection light pulses from an object irradiated with an irradiation light pulse, a first electric charge accumulation unit accumulating the electric charges in synchrony with turning on the irradiation light pulses, and a first reset unit resetting the electric charges; and a second pixel group includes a second photoelectric conversion unit that converts the reflection light into electric charges, a second electric charge accumulation unit that accumulates the electric charges synchronously with a switching the irradiation light pulses from on to off, and a second reset unit that releases a reset of the electric charges converted by the second photoelectric conversion unit.

A multifunctional sky camera system and techniques for the use thereof for total sky imaging and spectral irradiance/radiance measurement are provided. In one aspect, a sky camera system is provided. The sky camera system includes an objective lens having a field of view of greater than about 170 degrees; a spatial light modulator at an image plane of the objective lens, wherein the spatial light modulator is configured to attenuate light from objects in images captured by the objective lens; a semiconductor image sensor; and one or more relay lens configured to project the images from the spatial light modulator to the semiconductor image sensor. Techniques for use of the one or more of the sky camera systems for optical flow based cloud tracking and three-dimensional cloud analysis are also provided.

An image sensor includes a plurality of pixels, each pixel including a light sensing structure including first, second and third light sensing elements sequentially stacked on a substrate, the light sensing structure having a first surface adjacent to a readout circuit and a second surface including a light receiving portion between first and second circumferential portions, a first through via on the first circumferential portion, extending from the first surface to connect with the first light sensing element, and configured to transfer charges of the first light sensing element to the readout circuit, and a vertical transfer gate on a second circumferential portion and configured to transfer charges of the second light sensing element to the readout circuit, the first through via and the vertical transfer gate of each pixel being arranged in a 1-shaped or L-shaped pattern in the first and second circumferential portions.

A light-detecting device includes a photoelectric conversion film configured to generate a hole as a photoelectric charge and a readout circuit. The readout circuit includes a first node configured to hold the photoelectric charge generated by the photoelectric conversion film and a first P-type metal oxide semiconductor (MOS) transistor connected to the first node and a constant voltage source.

An image sensor includes a function layer including a photoelectric conversion region containing a plurality of semiconductor-type carbon nanotubes; a transparent electrode that collects first electric charges that are positive electric charges or negative electric charges, the positive electric charges or the negative electric charges being generated in the photoelectric conversion region upon entry of light; a first collection electrode that collects second electric charges having a polarity opposite to the first electric charges among the positive electric charges and the negative electric charges; a second collection electrode that collects the second electric charges; a first control electrode that controls movement of the second electric charges toward the first collection electrode; a second control electrode that controls movement of the second electric charges toward the second collection electrode; and an electric charge accumulator in which the second electric charges collected by the first collection electrode are accumulated.

An imaging pixel (2) to mitigate cross-talk effects comprises a voltage supply node (VN) to receive a supply voltage (VDD), and an output node (ON) to provide a pixel output signal. The imaging pixel (2) further comprises a photosensitive element (10), and a source follower transistor (31) having a control node coupled to the photosensitive element (10). The source follower transistor (31) is interposed between the voltage supply node (VN) and the output node (ON). The imaging pixel (2) comprises a clamping circuit (20) being interposed between the voltage supply node (VN) and the output node (ON).

An image sensor includes a pixel array including a plurality of pixels; a row driver configured to control the plurality of pixels; and an analog-to-digital converter configured to digitize a result sensed by the pixel array to generate a first image, wherein the pixel array includes: first pixel groups, wherein each first pixel group of the first pixel groups includes first white pixels and first color pixels among the plurality of pixels; and second pixel groups, wherein each second pixel group of the second pixel groups includes second white pixels and second color pixels among the plurality of pixels, and wherein first pixel data of the first image are generated based on the first white pixels and the first color pixels, and second pixel data of the first image are generated based on the second color pixels.

A back-illuminated semiconductor light detecting device includes a light detecting substrate having pixels, and a circuit substrate having signal processing units. For each of the pixels, the light detecting substrate includes avalanche photodiodes respectively having light receiving regions provided in a first main surface side of the semiconductor substrate. In the semiconductor substrate, for each pixel, a trench surrounds at least one region including the light receiving region when viewed from a direction perpendicular to the first main surface. The number of signal processing units is larger than the number of light receiving regions in each pixel, and the number of regions surrounded by the trench in each pixel is equal to or less than the number of light receiving regions in the pixel.

An overlight amount detection circuit (1) according to the present disclosure includes a MOS transistor and a high-impedance element (Ca). A source of the MOS transistor (Mn1) is connected to a vertical signal line (VSL) of an image sensor. The high-impedance element (Ca) is connected to a drain of the MOS transistor (Mn1). The overlight amount detection circuit (1) detects a potential fluctuation of the vertical signal line (VSL) based on a potential defined by a gate potential of the MOS transistor (Mn1), and outputs a potential of a contact point between the drain of the MOS transistor (Mn1) and the high-impedance element (Ca) as a signal indicating an overlight amount detection result.