A model-based control method includes: (a) acquiring temperature control data including temperature data of each of a plurality of zones of a temperature control member provided in a processing apparatus, temperature of each of the plurality of zones being individually controllable; (b) for each zone, specifying a temperature of another zone that is weight-averaged by a weighting coefficient determined according to a magnitude of heat transfer with the another zone; (c) for each zone, specifying a parameter of a state-space model of multi-input/single-output using the specified temperature of the another zone and the temperature control data; (d) creating a state-space model of multi-input/multi-output by assigning the specified parameter of the state-space model of multi-input/single-output to each element of the state-space model of multi-input/multi-output; and (e) controlling the temperature of each of the plurality of zones of the temperature control member using the state-space model of multi-input/multi-output.

A control system for controlling an adjustable output voltage provided to a heater includes a controller configured to determine an input parameter based on an electrical characteristic of the heater, where the heater includes a resistive heating element that is operable to emit heat and as a sensor. The controller is further configured to determine an output voltage for the heater based on the input parameter and a desired setpoint, and to transmit a signal to a power converter to generate the output voltage. The desired setpoint is based on an operational state of the heater, and the input parameter includes data indicative of a temperature of the resistive heating element that is determined based on the electrical characteristic.

A lamp for heating is composed of a heat dissipation substrate made of metal, an insulating layer disposed on the heat dissipation substrate, a plurality of wiring patterns disposed on the insulating layer, a plurality of light source elements disposed on the plurality of wiring patterns on a one-to-one basis, a joining material electrically joining each of the plurality of wiring patterns and each of the plurality of light source elements, and a metal wiring electrically connecting each adjacent pair of the plurality of light source elements.

A temperature controlling apparatus includes a platen, a first and a second conduits, and a first and a second outlet thermal sensors. The first conduit includes a first inlet, a first outlet, and a first heater. A first fluid enters the first inlet and exits the first outlet, the first heater heats the first fluid to a first heating temperature, and the first fluid is dispensed on the platen. The second conduit includes a second inlet, a second outlet, and a second heater. A second fluid enters the second inlet and exits the second outlet, the second heater heats the second fluid to a second heating temperature, and the second fluid is dispensed on the platen. The first and the second outlet thermal sensors are respectively disposed at the first and the second outlets to sense temperatures of the first and the second fluid.

Examples disclosed herein relate to a to a pitch gradient in a lamp filament, and a method of making. In one implementation, a lamp has a bulb filled with a gas. A filament is disposed within the bulb. The filament has a plurality of coils that include a first coil having a first point. The plurality of coils includes a second coil having a second point, and a third coil having a third point. The pitch gradient is defined by a first pitch between the second point and the first point, and a second pitch between the third point and the second point. The second pitch is greater than the first pitch. The second point is 360 degrees away from the first point. The third point is 360 degrees from the second point. A terminal coil is electrically coupled to at least the first coil, the second coil, and the third coil.

The present disclosure discloses a heating apparatus for a semiconductor device. The heating apparatus includes a carrier including a first abutting part, a heat collecting plate at least including a working surface, and a heat radiation source disposed on a side of the heat collecting plate opposite to the working surface and separated from the heat collecting plate by a predetermined distance. The heat collecting plate is disposed on the carrier, and the first abutting part abuts against an edge of the heat collecting plate on the side opposite to the working surface. The heat radiation source is and configured to emit heat radiation during working and to heat the heat collecting plate in a non-contact manner. The heat collecting plate receives the heat radiation and the emitted heat and heats a heated object disposed on the working surface in a contact manner.

A method and apparatus for improving film growth uniformity on a semiconductor substrate. The film growth uniformity is improved by adjusting the amount of power provided to the substrate by spot heaters as the substrate is rotated. Therefore, the amount of power provided to the substrate by the spot heaters changes as the portion of the substrate being heated by spot heater changes. The change in power provided by the spot heater is dependent on a temperature correction factor applied by the controller.

An apparatus may provide a component, such as a showerhead, a pipe, a valve manifold, or a vessel, having a printed heater affixed to an outer surface of the component. In addition, a printed temperature sensor may be affixed to the outer surface of the component. The apparatus may further provide a controller to control the power to the printed heater according to data output from the printed temperature sensor.

A plasma processing apparatus includes a stage having a placing surface on which a workpiece is accommodated; a heater provided in the stage and configured to adjust a temperature of the placing surface of the stage; and a controller. The controller is configured to control a supply power to the heater; measure the supply power in a transient state where the supply power to the heater increases and in a second steady state where the supply power to the heater is stable in an extinguished state of plasma; calculate a heat input amount and a heat resistance by performing a fitting on a calculation model that calculates the supply power in the transient state using the heat input amount from the plasma and the heat resistance between the workpiece and the heater as parameters; and calculate a temperature of the workpiece in the first steady state.

A substrate support including a body, a heating element, a first radio frequency filter, and a second radio frequency filter. The body is configured to support a substrate. The heating element is at least partially implemented in a first portion of the body. The first radio frequency filter is connected to an input of the heating element and at least partially implemented in a second portion of the body and connected to the heating element by a first via. The second radio frequency filter is connected to an output of the heating element and at least partially implemented in the second portion or a third portion of the body.