This high-frequency treatment device includes: a heating chamber configured to accommodate a heating target; a high-frequency power generator; a feeder; a detector; a controller; and a storage. The high-frequency power generator generates high-frequency power having a frequency in a predetermined frequency band. The feeder supplies incident microwave power corresponding to the high-frequency power to the heating chamber. The detector detects at least one of the incident microwave power and reflected microwave power that is included in the incident microwave power and returns from the heating chamber to the feeder. The controller controls heating of the heating target by controlling the high-frequency power generator. The storage stores, together with time elapsed from the start of heating, information detected by the detector. The controller causes the high-frequency power generator to repeatedly generate, on a per frequency basis, the high-frequency power having a plurality of frequencies for the heating. The controller properly controls heating of the heating target on the basis of a temporal change in one of the reflected microwave power, a reflection ratio, and a microwave power difference.

The high-frequency treatment device according to one embodiment of the present disclosure includes: a heating chamber that accommodates a heating target; an oscillator; at least one feeder; a detector; and a controller. The oscillator generates high-frequency power having an arbitrary frequency in a predetermined frequency band. At least one feeder supplies incident microwave power based on the high-frequency power to the heating chamber. The detector detects the incident microwave power and reflected microwave power returning from the heating chamber to at least one feeder. The controller causes the oscillator to execute a frequency sweep and measures a reflection characteristic based on the incident microwave power and the reflected microwave power for each heating condition including a frequency. The controller determines, based on a reflection variation range indicating a change in the reflection characteristic for each heating condition, a heating condition to be used next. According to the present aspect, various heating targets can be optimally heated.

The invention relates to method for preparing a foodstuff in a food processing system (100), the system comprising solid state radio frequency cooking means (51) that transmits an electromagnetic wave to a food substrate and a cavity where the food is cooked, the method monitoring the return power losses, which are the difference between the power emitted by the solid state radio frequency cooking means (51) and the reflected power in the cavity, for optimising the delivery of the radio frequency power to the food substrate by controlling and adjusting at least two parameters: the emitted frequency of the solid state radio frequency cooking means (51) and the distance of the cooking means (51) to the food substrate. In the method of the invention, the dielectric properties, the water content and/or the compaction of the food substrate are monitored throughout the preparation method.

The present disclosure provides a microwave cooking apparatus, a control method, and a storage medium. The microwave cooking apparatus comprises: a housing capable of enclosing a heating chamber therein; a solid microwave source disposed on the housing and used for emitting a first variable-power microwave; an antenna connected to the solid microwave source and used for feeding the first variable-power microwave into the heating chamber; and a controller connected to the solid microwave source and used for controlling the solid microwave source to operate and adjusting the first variable-power microwave. According to the technical solution of the present disclosure, on one hand, a better heating effect is able to be achieved for sealed foods, and on the other hand, a better unfreezing effect is also able to be achieved because the power of a solid microwave source is much lower than that of a magnetron so that during an unfreezing operation, foods to be defrosted will not be locally cooked resulting from local overheating caused when the foods to be defrosted locally absorbs too much heat due to excessive power.

An embodiment of a microwave heating apparatus includes a solid state microwave energy source, a chamber, a dielectric resonator antenna with an exciter dielectric resonator and a feed structure, and one or more additional dielectric resonators each positioned within a distance of the exciter resonator to form a dielectric resonator antenna array. The distance is selected so that each additional resonator is closely capacitively coupled with the exciter resonator. The feed structure receives an excitation signal from the microwave energy source. The exciter resonator is configured to produce a first electric field in response to the excitation signal, and the first electric field may directly impinge on the additional resonator(s). Impingement of the first electric field may cause each of the additional resonators to produce a second electric field. The electric fields are directed into the chamber to increase the thermal energy of a load within the chamber.

An embodiment of a microwave heating apparatus includes a solid state microwave energy source, a first dielectric resonator antenna that includes a first exciter dielectric resonator and a first feed structure in proximity to the first exciter dielectric resonator, one or more additional dielectric resonators stacked above the top surface of the first exciter dielectric resonator to form a vertically-stacked dielectric resonator antenna array. The first feed structure is electrically coupled to the microwave energy source to receive a first excitation signal, and the first exciter dielectric resonator is configured to produce a first electric field in response to the excitation signal provided to the first feed structure.

Embodiments disclosed herein include a housing for a source assembly. In an embodiment, the housing comprises a conductive body with a first surface and a second surface opposite from the first surface, and a plurality of openings through a thickness of the conductive body between the first surface and the second surface. In an embodiment, the housing further comprises a channel into the first surface of the conductive body, and a cover over the channel. In an embodiment, a first stem over the cover extends away from the first surface, and a second stem over the cover extends away from the first surface. In an embodiment, the first stem and the second stem open into the channel.

Power amplifier electronics for controlling application of radio frequency (RF) energy generated using solid state electronic components may further be configured to control application of RF energy in cycles between high and low powers. The power amplifier electronics may include a semiconductor die on which one or more RF power transistors are fabricated, an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab, and bonding ribbon bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network. The bonding ribbon may have a width of greater than about five times a thickness of the bonding ribbon.

The invention relates to a system (10) for curing and/or inspecting a pipeline lining (30) positioned in a pipeline (20), the pipeline lining (30) comprising an outer plastics material layer and an inner fiber composite layer, the fiber composite layer comprising a plastics material which is to be cured and/or which is at least partially cured. In accordance with the invention, the system (10) comprises at least one high-frequency unit (40) which comprises at least one microwave-generator unit (41) and at least one microwave-transmitting antenna (42) for curing a plastics material which is to be cured, at least the at least one microwave-transmitting antenna (42) being movable in the pipeline (20) by means of a transporting device (60).

An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. A top enclosure encloses the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the top enclosure engage reference ground metal traces on respective surface of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.