Patent classifications
H05H1/4652
Matchless plasma source for semiconductor wafer fabrication
A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.
Heat Management for Inductively Coupled Plasma Systems
A system for cooling an inductively coupled plasma (ICP) instrument includes: the ICP instrument; a pump in fluid communication with the instrument via a first conduit; and a micro-channel heat exchanger in fluid communication with the instrument via a second conduit, and in fluid communication with the pump via a third conduit. The pump is configured to generate a pump outlet pressure of coolant that exceeds a back pressure of the instrument such that a pressure of the coolant traveling through the second conduit and into the heat exchanger is less than or equal to 5 pounds per square inch (psi) above atmospheric pressure, as measured at an inlet to the heat exchanger.
INDUCTION FEED THROUGH SYSTEM
An induction feed through system for treating a flow of material is disclosed, including a high voltage energy source energizing a low-turn coil wrapped about an outer wall of a reaction chamber. The flow of electricity through the low-turn coil in turn energizes a high-turn coil wrapped about an inner wall disposed within the outer wall of the reaction chamber. An electrode assembly disposed within the reaction chamber is electrically coupled to and energized by the high-turn coil, in turn generating plasma in the reaction chamber. The plasma is used to excite a flow of material through the induction feed through system. The electromagnetic properties of the plasma further provide direct feedback to the low-turn and high-turn coils.
Atmospheric pressure linear rf plasma source for surface modification and treatment
An atmospheric pressure linear RF plasma source having an enclosure enclosing a chamber in the form of an extended slot having a width W, a length L, and a thickness T, with W≥20T, the enclosure having a top opening for receiving a flow of a working gas in the direction of the length L and a bottom opening for delivering a flow of plasma, with the bottom opening being open to atmospheric pressure. Then walls of the enclosure comprise a dielectric material. Two mutually opposing pancake coils are positioned on opposite sides of the enclosure and are capable of being driven by an RF power source in an opposing phase relationship. Alternatively, an elongated solenoid coil may surround the enclosure.
METHOD OF AND APPARATUS FOR PLASMA REACTION
An energy amplification agent 6 is supplied into a reactor 1 to generate fine particles of the agent 6 inside of the heated reactor by vaporizing the agent, and, then, the fine particles are ionized by electromagnetic waves to form a plasma space 5 including a combination of atoms of the fine particles, ions and electrons in which the fine particles themselves are decayed in plasma to be separated into protons, neutrons and electrons by electromagnetic waves in shape of standing waves emitted from a wall surface 1a and large-strength electromagnetic waves generated at an uncertain period through amplification functions of the fine particles, so that hydrogen is obtained, and heat is obtained in such a manner that protons and neutrons are mainly reunited with each other in a plasma atmosphere after the plasma decay when gas to be treated is supplied into the plasma space.
Inductive coil structure and inductively coupled plasma generation system
An inductively-coupled plasma (ICP) generation system may include a dielectric tube, a first inductive coil structure to enclose the dielectric tube, an RF power supply, a first main capacitor between a positive output terminal of the RF power supply and one end of the first inductive coil structure, and a second main capacitor between a negative output terminal of the RF power supply and an opposite end of the first inductive coil structure. The first inductive coil structure may include inductive coils connected in series to each other and placed at different layers, the inductive coils having at least one turn at each layer, and auxiliary capacitors, which are respectively provided between adjacent ones of the inductive coils to distribute a voltage applied to the inductive coils.
RADIO-FREQUENCY PLASMA GENERATING SYSTEM AND METHOD FOR ADJUSTING THE SAME
Disclosed is a radio-frequency plasma generating system including a radio-frequency generator and a plasma source, the radio-frequency generator being inductively or capacitively coupled to the plasma source through a resonant electric circuit, the radio-frequency generator being adapted to receive direct current power from a direct current power supply and for generating radio-frequency power at a frequency f, the radio-frequency power including a reactive radio-frequency power oscillating in the resonant electric circuit and an active radio-frequency power absorbed by the plasma. The radio-frequency plasma generating system includes a unit for measuring an efficiency of conversion E of direct-current power to active radio-frequency power absorbed by the plasma and a unit for adjusting the frequency f as a function of the measured efficiency of conversion E to maintain the efficiency of conversion E in a predetermined range within a RF plasma operational range.
INDUCTIVE COIL STRUCTURE AND INDUCTIVELY COUPLED PLASMA GENERATION SYSTEM
An inductively-coupled plasma (ICP) generation system may include a dielectric tube, a first inductive coil structure to enclose the dielectric tube, an RF power supply, a first main capacitor between a positive output terminal of the RF power supply and one end of the first inductive coil structure, and a second main capacitor between a negative output terminal of the RF power supply and an opposite end of the first inductive coil structure. The first inductive coil structure may include inductive coils connected in series to each other and placed at different layers, the inductive coils having at least one turn at each layer, and auxiliary capacitors, which are respectively provided between adjacent ones of the inductive coils to distribute a voltage applied to the inductive coils.
Muscle optimization device and method
A system, device and method are provided for exposing a patient to therapeutic resonant frequency patterns (RFP) for therapy and treatment of a patient, for example, biological tissue such as muscle, tendon, ligament, and nerve tissue. The resonance frequencies originate from many bioactive substances, pharmaceuticals or other compounds, and key frequencies of the RFP of a compound can be replicated and then delivered to a patient using an electromagnetic catalyst to provide therapeutic benefits. RFPs can be imprinted in a separate device using a plasma imprinting device and method. This separate device can be actively excited by a delivery mechanism that uses electromagnetic or mechanical waves to interact with the device. The actively excited device transmits the RFPs or therapeutic resonant frequency patterns to the patient for similar enhancements and therapeutic benefits.
THERMAL EVAPORATION PLASMA DEPOSITION
A deposition system includes comprising an induction crucible apparatus configured to produce a material vapour. When in use, the induction crucible apparatus is configured to inductively heat a crucible to generate two or more thermal zones in the crucible. The deposition system further includes a substrate support configured to support a substrate and a plasma source configured to generate a plasma between the induction crucible apparatus and the substrate support such that transmission of the material vapour at least partly through the plasma generates a deposition material for deposition on the substrate.