An anisotropic conductive film, capable of connecting a terminal formed on a substrate having a wavy surface such as a ceramic module substrate with conduction characteristics stably maintained, includes an insulating adhesive layer, and conductive particles regularly arranged in the insulating adhesive layer as viewed in a plan view. The conductive particle diameter is 10 μm or more, and the thickness of the film is 1 or more times and 3.5 or less times the conductive particle diameter. The variation range of the conductive particles in the film thickness direction is less than 10% of the conductive particle diameter.

The present invention provides a high thermal conductive silicon nitride sintered body having a thermal conductivity of 50 W/m.Math.K or more and a three-point bending strength of 600 MPa or more, wherein when an arbitrary cross section of the silicon nitride sintered body is subjected to XRD analysis and highest peak intensities detected at diffraction angles of 29.3±0.2°, 29.7±0.2°, 27.0±0.2°, and 36.1±0.2° are expressed as I.sub.29.3°, I.sub.29.7°, I.sub.27.0°, and I.sub.36.1°, a peak ratio (I.sub.29.3°)/(I.sub.27.0°+I.sub.36.1°) satisfies a range of 0.01 to 0.08, and a peak ratio (I.sub.29.7°)/(I.sub.27.0°+I.sub.36.1°) satisfies a range of 0.02 to 0.16. Due to above configuration, there can be provided a silicon nitride sintered body having a high thermal conductivity of 50 W/m.Math.K or more, and excellence in insulating properties and strength.

The present invention relates to an improved electronic circuit, as well as an improved substrate with electronic circuits, with an identification pattern. The invention makes it possible to make them identifiable and amongst other things to retrace the circuit(s) in this way through the production process. Furthermore, the invention relates to an improved production method for circuits and substrates according to the invention.

The present application relates to a conductive structure body and a manufacturing method thereof. The method for manufacturing the conductive structure body according to an exemplary embodiment of the present application includes forming a metal layer on a substrate and forming a darkening layer on the metal layer, in which the forming of the darkening layer is performed by reactive sputtering using CO.sub.2.

Provided is a transparent conductive film-equipped substrate that makes it difficult for an insulating film provided on a portion from which a transparent conductive film has been removed to peel off. The transparent conductive film-equipped substrate 10 includes a substrate 1 and a transparent conductive film 2 provided on the substrate 1 and subjected to patterning, wherein the transparent conductive film-equipped substrate is made up so that: a removal region A1 where the transparent conductive film 2 has been removed by patterning, a non-removal region A2 where the transparent conductive film is left unremoved, and a boundary region A3 provided between the removal region A1 and the non-removal region A2 are formed on the substrate 1; and the boundary region A3 is formed with insular portions 2b in which the transparent conductive film 2 is formed in insular shapes.

To improve a TCT characteristic of a circuit substrate. The circuit substrate comprises a ceramic substrate including a first and second surfaces, and first and second metal plates respectively bonded to the first and second surfaces via first and second bonding layers. A three-point bending strength of the ceramic substrate is 500 MPa or more. At least one of L1/H1 of a first protruding portion of the first bonding layer and L2/H2 of a second protruding portion of the second bonding layer is 0.5 or more and 3.0 or less. At least one of an average value of first Vickers hardnesses of 10 places of the first protruding portion and an average value of second Vickers hardnesses of 10 places of the second protruding portion is 250 or less.

A method includes forming one or more vias in a first layer, forming one or more vias in at least a second layer different than the first layer, aligning at least a first via in the first layer with at least a second via in the second layer, and bonding the first layer to the second layer by filling the first via and the second via with solder material using injection molded soldering.

A method for manufacturing a ceramic substrate containing glass includes a firing step in which an unfired silver-based conductor material is disposed on an unfired ceramic layer and is fired. The unfired silver-based conductor material contains at least one of a metal boride and a metal silicide.

A glass substrate for a high-frequency device, which contains SiO.sub.2 as a main component, the glass substrate having a total content of alkali metal oxides in the range of 0.001-5% in terms of mole percent on the basis of oxides, the alkali metal oxides having a molar ratio represented by Na.sub.2O/(Na.sub.2O+K.sub.2O) in the range of 0.01-0.99, and the glass substrate having a total content of alkaline earth metal oxides in the range of 0.1-13% in terms of mole percent on the basis of oxides, wherein at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

An embedded power module includes a substrate, first and second semiconducting dies, first and second gates, and first and second vias. The first semiconducting die is embedded in the substrate and spaced between opposite first and second surfaces of the substrate. The second semiconducting die is embedded in the substrate, is spaced between the first and second surfaces, and is spaced from the first semiconducting die. The first gate is located on the first surface. The second gate is located on the second surface. The first via is electrically engaged to the first gate and the second semiconducting die, and the second via is electrically engaged to the second gate and the first semiconducting die.