A display device manufacturing method includes annealing a display substrate by irradiating a laser to the display substrate in different energy values, measuring a transmittance of the annealed display substrate, and determining an optimal crystallization value of the display substrate based on the transmittance, wherein the determining of the optimal crystallization value includes calculating an absorbance of the display substrate for each energy value of the laser based on the transmittance, calculating a band gap energy of the annealed display substrate for each energy value of the laser based on the absorbance, and determining an energy value of the laser corresponding to a minimum value of the band gap energy as the optimal crystallization value. Also provided is a display device manufacturing apparatus that may implement the manufacturing method.

To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In.sub.1+Ga.sub.1O.sub.3(ZnO).sub.m (0<<1 and m=1 to 3 are satisfied), and the composition of the entire oxide semiconductor film including the c-axis-aligned crystalline region is represented by In.sub.xGa.sub.yO.sub.3(ZnO).sub.m (0<x<2, 0<y<2, and m=1 to 3 are satisfied).

By controlling the luminance of light emitting element not by means of a voltage to be impressed to the TFT but by means of controlling a current that flows to the TFT in a signal line drive circuit, the current that flows to the light emitting element is held to a desired value without depending on the characteristics of the TFT. Further, a voltage of inverted bias is impressed to the light emitting element every predetermined period. Since a multiplier effect is given by the two configurations described above, it is possible to prevent the luminance from deteriorating due to a deterioration of the organic luminescent layer, and further, it is possible to maintain the current that flows to the light emitting element to a desired value without depending on the characteristics of the TFT.

A method of manufacturing a low temperature polycrystalline silicon thin film and a thin film transistor, a thin film transistor, a display panel and a display device are provided. The method includes: forming an amorphous silicon thin film (01) on a substrate (1); forming a pattern of a silicon oxide thin film (02) covering the amorphous silicon thin film (01), a thickness of the silicon oxide thin film (02) located at a preset region being larger than that of the silicon oxide thin film (02) located at other regions; and irradiating the silicon oxide thin film (02) by using excimer laser to allow the amorphous silicon thin film (01) forming an initial polycrystalline silicon thin film (04), the initial polycrystalline silicon thin film (04) located at the preset region being a target low temperature polycrystalline silicon thin film (05). The polycrystalline silicon thin film has more uniform crystal size.

An organic light-emitting diode display is disclosed. In one aspect, the display includes a substrate, a scan line formed over the substrate and configured to provide a scan signal, and a data line crossing the scan line and configured to provide a data voltage. A driving voltage line crosses the scan line and is configured to provide a driving voltage. The display also includes a switching transistor electrically connected to the scan line and the data line and a driving transistor electrically connected to the switching transistor and including a driving gate electrode, a driving source electrode, and a driving drain electrode. The display further includes a storage capacitor including a first storage electrode formed over the driving transistor and the driving gate electrode as a second storage electrode. The second storage electrode overlaps the first storage electrode in the depth dimension and extends from the driving voltage line.

A display device includes: a plurality of pixels connected to gate lines and data lines; a gate driver to supply a gate signal to the gate lines; and a data driver to supply a data signal to the data lines. The gate driver includes: a first transistor including a first active layer at a first layer; and a second transistor including a second active layer at a second layer on the first layer.

A laser annealing apparatus includes a substrate supporter that receives a substrate having an amorphous silicon layer, a laser beam irradiation unit that irradiates a line laser beam onto the substrate disposed on the substrate supporter, and a substrate transport unit that moves the substrate supporter in the first direction and in a second direction crossing the first direction and rotates the substrate supporter within a first plane defined by the first direction and the second direction. The substrate transport unit rotates the substrate supporter by an angle less than about 90 degrees within the first plane and moves the substrate supporter both in the first direction and in the second direction at substantially the same time. The laser beam irradiation unit irradiates the line laser beam multiple times onto the substrate disposed on the substrate supporter while the substrate transport unit moves the substrate supporter.

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

The present invention provides a display device and a manufacturing method thereof that can simplify manufacturing steps and enhance efficiency in the use of materials, and further, a manufacturing method that can enhance adhesiveness of a pattern. One feature of the invention is that at least one or more patterns needed for manufacturing a display panel, such as a conductive layer forming a wiring or an electrode or a mask for forming a desired pattern is/are formed by a method capable of selectively forming a pattern, thereby manufacturing a display panel.

The present application discloses a method of fabricating a polycrystalline semiconductor layer, comprising forming a heat storage layer; forming a buffer layer on the heat storage layer; forming a first amorphous semiconductor layer on a side of the buffer layer distal to the heat storage layer; and crystallizing the first amorphous semiconductor layer to form a first polycrystalline semiconductor layer.