A semiconductor substrate, including a back surface having N-type conductive regions and P-type conductive regions. The N-type conductive regions are provided with first non-pyramidal texture structures, and the P-type conductive regions are provided with second non-pyramidal texture structures. A top surface of the first non-pyramidal texture structure is a polygonal plane, and a top surface of the second non-pyramidal texture structure is a polygonal plane. A one-dimensional size of the top surface of the first non-pyramidal texture structure is less than a one-dimensional size of the top surface of the second non-pyramidal texture structure. The one-dimensional size of the top surface of the first non-pyramidal texture structure is in a range of 5 m to 12 m. The one-dimensional size of the top surface of the second non-pyramidal texture structure is in a range of 10 m to 40 m.

The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.

Each solar cell 1 includes: a silicon substrate 2; a diffusion layer 3; a first collection electrode 4 contacting the diffusion layer 3; a first connection electrode 5 contacting the diffusion layer 3 and the first collection electrode 4; an insulation layer 7 having an opening portion extending therethrough; a second collection electrode 8 contacting the insulation layer 7 and connected to the single crystal silicon substrate 2 via the opening portion 70; and a second connection electrode 9 contacting the second collection electrode 8. The first connection electrode 5 and the second connection electrode 9 are separated from each other. The second collection electrode 8 and the single crystal silicon substrate 2 are separated from each other via the insulation layer 7 in almost all or all of an overlapping area of each two adjacent PERC solar cells 1.

Disclosed is solar cell, a photovoltaic module, and a method for manufacturing a photovoltaic module. The solar cell includes a substrate, first busbars and second busbars arranged on the substrate, first fingers connected to the first busbars, and second fingers connected to the second busbars. The first busbars and the second busbars have opposite polarities. The first fingers have a same polarity as the first busbars, and the second fingers have a same polarity as the second busbars. The substrate is provided with busbar pits. At least part of the first and second busbars are located in the busbar pits. Depths of the busbar pits range from 30 m to 50 m. Along a thickness direction of the substrate, ratios of the depths of the busbar pits to heights of the first busbars and/or the second busbars range from 10:3 to 6:5.

A solar cell is provided, including a substrate having a rear surface including P-type regions and N-type regions, first dielectric layers each formed over a N-type region, first doped polysilicon layers each formed on a first dielectric layer and doped with an N-type doping element, second dielectric layers each formed over a P-type region, second doped polysilicon layers each formed on a second dielectric layer and doped with a P-type doping element, a passivation layer formed over surfaces of the first and second doped polysilicon layers, and first and second electrodes penetrating the passivation layer. Each first electrode is electrically connected to a first doped polysilicon layer and each second electrode is electrically connected to a second doped polysilicon layer. A first roughness of a surface of a first doped polysilicon layer is greater than a second roughness of a surface of a second doped polysilicon layer.

The present invention discloses a back contact solar cell. The back contact solar cell includes a semiconductor substrate having a front surface and a rear surface; a first conductive type semiconductor region having a first conductive type and a second conductive type semiconductor region having a second conductive type at an interval on the rear surface of the semiconductor substrate. Furthermore, the rear surface of the semiconductor substrate has a texturing structure at the interval between the first conductive type semiconductor region and the second conductive type semiconductor region.

An ion implantation system having a grid assembly. The system includes a plasma source configured to provide plasma in a plasma region; a first grid plate having a plurality of apertures configured to allow ions from the plasma region to pass therethrough, wherein the first grid plate is configured to be biased by a power supply; a second grid plate having a plurality of apertures configured to allow the ions to pass therethrough subsequent to the ions passing through the first grid plate, wherein the second grid plate is configured to be biased by a power supply; and a substrate holder configured to support a substrate in a position where the substrate is implanted with the ions subsequent to the ions passing through the second grid plate.

The present invention relates to multi-cell devices fabricated on a common substrate that are more desirable than single cell devices, particularly in photovoltaic applications. Multi-cell devices operate with lower currents, higher output voltages, and lower internal power losses. Prior art multi-cell devices use physical isolation to achieve electrical isolation between cells. In order to fabricate a multicell device on a common substrate, the individual cells must be electrically isolated from one another. In the prior art, isolation generally required creating a physical dielectric barrier between the cells, which adds complexity and cost to the fabrication process. The disclosed invention achieves electrical isolation without physical isolation by proper orientation of interdigitated junctions such that the diffusion fields present in the interdigitated region essentially prevent the formation of a significant parasitic current which would be in opposition to the output of the device.

A laser processing system can be utilized to produce high-performance interdigitated back contact (IBC) solar cells. The laser processing system can be utilized to ablate, transfer material, and/or laser-dope or laser fire contacts. Laser ablation can be utilized to remove and pattern openings in a passivated or emitter layer. Laser transferring may then be utilized to transfer dopant and/or contact materials to the patterned openings, thereby forming an interdigitated finger pattern. The laser processing system may also be utilized to plate a conductive material on top of the transferred dopant or contact materials.

A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.