Disclosed is a manufacturing method of a solar cell, including forming a photoelectric converter including an amorphous semiconductor layer, forming an electrode connected to the photoelectric converter, and performing a post-treatment by providing light to the photoelectric converter and the electrode.

A temperature-controlled photodetector sub-system is described. The temperature control element allows the operation of the photodetector at a desired temperature. The temperature control element can be a heater or a cooler. In some cases, the photodetector is a germanium photodetector. In some cases a temperature measuring device is provided. In some cases, a control circuit is used to control the temperature of the germanium photodetector within a temperature range, or at a temperature of interest. An advantage provided by the apparatus described is the operation of the photodetector so that the responsivity of the germanium detector can be held at essentially a constant value.

A photovoltaic device and method include a doped germanium-containing substrate, an emitter contact coupled to the substrate on a first side and a back contact coupled to the substrate on a side opposite the first side. The emitter includes at least one doped layer of an opposite conductivity type as that of the substrate and the back contact includes at least one doped layer of the same conductivity type as that of the substrate. The at least one doped layer of the emitter contact or the at least one doped layer of the back contact is in direct contact with the substrate, and the at least one doped layer of the emitter contact or the back contact includes an n-type material having an electron affinity smaller than that of the substrate, or a p-type material having a hole affinity larger than that of the substrate.

The invention relates to a photoactive semiconductor component, especially a photovoltaic solar cell, having a semiconductor substrate, a carbon-containing SiC layer disposed indirectly upon a surface of the semiconductor substrate, and a passivating intermediate layer disposed indirectly or directly between the SiC layer and semiconductor substrate, and a metallic contact connection disposed indirectly or directly upon a side of the SiC layer facing away from the passivating intermediate layer and in electrically conductive connection with the SiC layer, where the SiC layer has p-type or n-type doping, which is characterized in that the SiC layer partly has a partly amorphous structure and partly has a crystalline structure.

A thin film transistor array panel includes a substrate, an insulation layer, a first semiconductor, and a second semiconductor. The insulation layer is disposed on the substrate and includes a stepped portion. The first semiconductor is disposed on the insulation layer. The second semiconductor is disposed on the insulation layer and includes a semiconductor material different than the first semiconductor. The stepped portion is spaced apart from an edge of the first semiconductor.

A method for preparing TOPCon battery substrate and double-sided electroplated TOPcon battery prepared therefrom are provided. The method includes: providing a double-sided grooved silicon matrix of a TOPCon battery; carrying out thermal repair treatment on the silicon matrix; respectively carrying out light injection treatment on the front side and the back side of the silicon matrix after thermal repair treatment, thereby the TOPCon battery substrate is obtained. Thermal repair treatment can greatly increase the overall lattice thermal motion of the silicon substrate, and light is injected into the front side and the back side in the directions of two different light incidence surfaces, so that both the front side and the back side can absorb light, thereby repairing the defects at the interface between the amorphous silicon and the silicon wafer and improving the quality of the PN junctions.

An apparatus and system, including a chip including a photodetector, wherein the photodetector includes a semiconductor photodiode and a heater proximate to the photodiode; wherein the heater is enabled to increase a temperature of the photodiode and a temperature sensing device to determine the temperature of the photodiode.

The present application provides a silicon-based heterojunction solar cell and a manufacturing method thereof. The silicon-based heterojunction solar cell includes: a silicon substrate, as well as a first passivation layer, an N-type doped layer, a first transparent conductive oxide layer and a first electrode. The first passivation layer, the N-type doped layer, the first transparent conductive oxide layer and the first electrode are sequentially stacked on the front side of the silicon substrate along a first direction. The first passivation layer includes a first sub-passivation layer, a carbon-doped amorphous silicon layer and a second sub-passivation layer which are sequentially stacked along the first direction.

The present application provides a silicon-based heterojunction solar cell and a manufacturing method thereof. The silicon-based heterojunction solar cell includes: a silicon substrate, as well as a first passivation layer, an N-type doped layer, a first transparent conductive oxide layer and a first electrode. The first passivation layer, the N-type doped layer, the first transparent conductive oxide layer and the first electrode are sequentially stacked on the front side of the silicon substrate along a first direction. The first passivation layer includes a first sub-passivation layer, a carbon-doped amorphous silicon layer and a second sub-passivation layer which are sequentially stacked along the first direction.