A photoconductive transducer intended to generate or detect waves in the terahertz frequency domain or in the picosecond pulse domain is provided. The transducer comprises a three-dimensional structure that includes, in this order, a first planar electrode, an array of nano-columns embedded in a layer of resist and a second planar electrode parallel to the first planar electrode. The design of the transducer increases the optical-to-terahertz conversion efficiency by means of photonic and plasmonic resonances and by means of high and homogeneous electric fields. The height of the nano-columns as well as the thickness of the resist range between 100 nanometres and 400 nanometres. The width of the nano-columns is between 100 nanometres and 400 nanometres, the distance between two adjacent nano-columns is between 300 nanometres and 500 nanometres, the nano-columns are made of a III-V semiconductor. The second electrode is transparent, so as to allow the transmission of a laser source towards the photo-absorbing nano-columns.

A photoconductive transducer intended to generate or detect waves in the terahertz frequency domain or in the picosecond pulse domain is provided. The transducer comprises a three-dimensional structure that includes, in this order, a first planar electrode, an array of nano-columns embedded in a layer of resist and a second planar electrode parallel to the first planar electrode. The design of the transducer increases the optical-to-terahertz conversion efficiency by means of photonic and plasmonic resonances and by means of high and homogeneous electric fields. The height of the nano-columns as well as the thickness of the resist range between 100 nanometres and 400 nanometres. The width of the nano-columns is between 100 nanometres and 400 nanometres, the distance between two adjacent nano-columns is between 300 nanometres and 500 nanometres, the nano-columns are made of a III-V semiconductor. The second electrode is transparent, so as to allow the transmission of a laser source towards the photo-absorbing nano-columns.

The invention relates to an infrared photodetector (1), comprising an electron transport layer (4) and an infrared photon absorption layer (5) for generating an electrical signal, characterized in that the electron transport layer (4) comprises nanocrystals of a compound selected from SnO.sub.2, ZnO, CdS, CdSe, aluminium-doped zinc oxide, Cr.sub.2O.sub.3, CuO, CuO.sub.2, Cu.sub.2O.sub.3, ZrO.sub.2, and mixture thereof and heterostructure thereof and alloy thereof, and in that the infrared photon absorption layer (5) comprises nanocrystals of a compound selected from HgS, HgSe, HgTe, PbS, PbSe, PbTe, Ag.sub.2S, Ag.sub.2Se, Ag.sub.2Te, InAs, InGaAs, and InSb, and mixture thereof, and heterostructure thereof and alloy thereof.

A method for passivating the surface of crystalline iron disulfide (FeS.sub.2) by encapsulating it within an epitaxial zinc sulfide (ZnS) matrix. Also disclosed is the related product comprising FeS.sub.2 encapsulated by a ZnS matrix in which the sulfur atoms at the FeS.sub.2 surfaces are passivated. Additionally disclosed is a photovoltaic (PV) device incorporating FeS.sub.2 encapsulated by a ZnS matrix.

A passivated iron disulfide (FeS.sub.2) surface encapsulated by an epitaxial zinc sulfide (ZnS) capping layer or matrix is provided. Also disclosed are methods for passivating the surface of crystalline iron disulfide by encapsulating it with an epitaxial zinc sulfide capping layer or matrix. Additionally disclosed is a photovoltaic (PV) device incorporating FeS.sub.2 encapsulated by ZnS.

A method of forming a wavelength detector that includes forming a first transparent material layer having a uniform thickness on a first mirror structure, and forming an active element layer including a plurality of nanomaterial sections and electrodes in an alternating sequence atop the first transparent material layer. A second transparent material layer is formed having a plurality of different thickness portions atop the active element layer, wherein each thickness portion correlates to at least one of the plurality of nanomaterials. A second mirror structure is formed on the second transparent material layer.

A method for passivating the surface of crystalline iron disulfide (FeS.sub.2) by encapsulating it within an epitaxial zinc sulfide (ZnS) matrix. Also disclosed is the related product comprising FeS.sub.2 encapsulated by a ZnS matrix in which the sulfur atoms at the FeS.sub.2 surfaces are passivated. Additionally disclosed is a photovoltaic (PV) device incorporating FeS.sub.2 encapsulated by a ZnS matrix.

A passivated iron disulfide (FeS.sub.2) surface encapsulated by an epitaxial zinc sulfide (ZnS) capping layer or matrix is provided. Also disclosed are methods for passivating the surface of crystalline iron disulfide by encapsulating it with an epitaxial zinc sulfide capping layer or matrix. Additionally disclosed is a photovoltaic (PV) device incorporating FeS.sub.2 encapsulated by ZnS.

There is provided a quantum dot solar cell having a high optical absorption coefficient. The quantum dot solar cell includes a quantum dot layer 3 including a plurality of quantum dots 1, wherein the quantum dot layer 3 includes a first quantum dot layer 3A having an index /x of 5% or more, wherein x is an average particle size, and is a standard deviation. The quantum dot layer 3 also includes a second quantum dot layer 3B that is provided on the light entrance surface 3b and/or the light exit surface 3c of the first quantum dot layer 3A and has an average particle size and an index /x smaller than those of the first quantum dot layer 3A.

Disclosed are a solar cell and a method of manufacturing the same. The solar cell with a graphene-silicon quantum dot hybrid structure according to an embodiment of the present disclosure includes a hybrid structure including a silicon quantum dot layer, in which a silicon oxide layer includes a plurality of silicon quantum dots; a doped graphene layer formed on the silicon quantum dot layer, and an encapsulation layer formed on the doped graphene layer; and electrodes formed on upper and lower parts of the hybrid structure.