A method of forming a wavelength detector that includes forming a first transparent material layer having a uniform thickness on a first mirror structure, and forming an active element layer including a plurality of nanomaterial sections and electrodes in an alternating sequence atop the first transparent material layer. A second transparent material layer is formed having a plurality of different thickness portions atop the active element layer, wherein each thickness portion correlates to at least one of the plurality of nanomaterials. A second mirror structure is formed on the second transparent material layer.

Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.

Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.

Methods of fabricating solar cell emitter regions using silicon nano-particles and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a region of doped silicon nano-particles above a dielectric layer disposed above a surface of a substrate of the solar cell. A layer of silicon is formed on the region of doped silicon nano-particles. At least a portion of the layer of silicon is mixed with at least a portion of the region of doped silicon nano-particles to form a doped polycrystalline silicon layer disposed on the dielectric layer.

An electrical device that includes an electrically-conductive substrate having a flexible structure; and wherein the flexible structure is formed by coating, encapsulating, and entangling it with porous silicon nano-particles, and wherein the porous silicon nano-particles are produced according to steps of: (I) alloying a raw silicon material with at least one distillable alloying metal selected from zinc and magnesium to form an alloy; (II) milling the alloy to form alloy nano-particles of 100 nm-150 nm in diameter, and doing the milling in an inert environment to alleviate oxidation of the alloy; (III) distilling the alloying metal from the alloy nano-particles so that a porous silicon structure is produced, the distilling being performed in a vacuum furnace; and (IV) milling the porous silicon structure in an inert environment to break the porous silicon structure apart, thereby to produce the porous silicon nano-particles.

The present disclosure relates to a method for fabricating an array of nanoprojections, where the nanoprojections may include nanopillars, nanowires, nanoneedles or nanocones. The present disclosure also relates to an array of the nanoprojections, and to uses of such arrays.

The present disclosure concerns a light field detector for converting a vector of an 5 electromagnetic radiation into a chromatic output, comprising at least one azimuth detector on a transparent substrate and the at least one azimuth detector comprising at least two luminescent nanocrystal pixels having different emission wavelengths relative to each other. The present disclosure also concerns a light field sensor comprising the light field detector thereof and methods of fabricating the light field 10 detector.

A sensor assembly for determining one or more features of a local area is presented herein. The sensor assembly includes a plurality of stacked sensor layers. A first sensor layer of the plurality of stacked sensor layers located on top of the sensor assembly includes an array of pixels. The top sensor layer can be configured to capture one or more images of light reflected from one or more objects in the local area. The sensor assembly further includes one or more sensor layers located beneath the top sensor layer. The one or more sensor layers can be configured to process data related to the captured one or more images. A plurality of sensor assemblies can be integrated into an artificial reality system, e.g., a head-mounted display.