Patent classifications
H10F77/164
LARGE-GRAIN CRYSTALLIZED METAL CHALCOGENIDE FILM, COLLOIDAL SOLUTION OF AMORPHOUS PARTICLES, AND PREPARATION METHODS
The present invention relates to a method for preparing an aqueous or hydro-alcoholic colloidal solution of metal chalcogenide amorphous nanoparticles notably of the Cu.sub.2ZnSnS.sub.4 (CZTS) type and to the obtained colloidal solution.
The present invention also relates to a method for manufacturing a film of large-grain crystallized semi-conducting metal chalcogenide film notably of CZTS obtained from an aqueous or hydro-alcoholic colloidal solution according to the invention, said film being useful as an absorption layer deposited on a substrate applied in a solid photovoltaic device.
Method of passivating an iron disulfide surface via encapsulation in a zinc sulfide matrix
A method for passivating the surface of crystalline iron disulfide (FeS.sub.2) by encapsulating it within an epitaxial zinc sulfide (ZnS) matrix. Also disclosed is the related product comprising FeS.sub.2 encapsulated by a ZnS matrix in which the sulfur atoms at the FeS.sub.2 surfaces are passivated. Additionally disclosed is a photovoltaic (PV) device incorporating FeS.sub.2 encapsulated by a ZnS matrix.
Passivated iron disulfide surface encapsulated in zinc sulfide
A passivated iron disulfide (FeS.sub.2) surface encapsulated by an epitaxial zinc sulfide (ZnS) capping layer or matrix is provided. Also disclosed are methods for passivating the surface of crystalline iron disulfide by encapsulating it with an epitaxial zinc sulfide capping layer or matrix. Additionally disclosed is a photovoltaic (PV) device incorporating FeS.sub.2 encapsulated by ZnS.
METHOD OF PASSIVATING AN IRON DISULFIDE SURFACE VIA ENCAPSULATION IN A ZINC SULFIDE MATRIX
A method for passivating the surface of crystalline iron disulfide (FeS.sub.2) by encapsulating it within an epitaxial zinc sulfide (ZnS) matrix. Also disclosed is the related product comprising FeS.sub.2 encapsulated by a ZnS matrix in which the sulfur atoms at the FeS.sub.2 surfaces are passivated. Additionally disclosed is a photovoltaic (PV) device incorporating FeS.sub.2 encapsulated by a ZnS matrix.
PASSIVATED IRON DISULFIDE SURFACE ENCAPSULATED IN ZINC SULFIDE
A passivated iron disulfide (FeS.sub.2) surface encapsulated by an epitaxial zinc sulfide (ZnS) capping layer or matrix is provided. Also disclosed are methods for passivating the surface of crystalline iron disulfide by encapsulating it with an epitaxial zinc sulfide capping layer or matrix. Additionally disclosed is a photovoltaic (PV) device incorporating FeS.sub.2 encapsulated by ZnS.
BANDGAP GRADING OF CZTS SOLAR CELL
A method for fabricating a photovoltaic device includes forming a polycrystalline absorber layer including CuZnSnS(Se) (CZTSSe) over a substrate. The absorber layer is rapid thermal annealed in a sealed chamber having elemental sulfur within the chamber. A sulfur content profile is graded in the absorber layer in accordance with a size of the elemental sulfur and an anneal temperature to provide a graduated bandgap profile for the absorber layer. Additional layers are formed on the absorber layer to complete the photovoltaic device.
Bandgap grading of CZTS solar cell
A method for fabricating a photovoltaic device includes forming a polycrystalline absorber layer including CuZnSnS(Se) (CZTSSe) over a substrate. The absorber layer is rapid thermal annealed in a sealed chamber having elemental sulfur within the chamber. A sulfur content profile is graded in the absorber layer in accordance with a size of the elemental sulfur and an anneal temperature to provide a graduated bandgap profile for the absorber layer. Additional layers are formed on the absorber layer to complete the photovoltaic device.
SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
Disclosed is a solar cell including a semiconductor substrate, a protective-film layer formed over one surface of the semiconductor substrate, a first conductive area disposed over the protective-film layer, the first conductive area being of a first conductive type and including a crystalline semiconductor, and a first electrode electrically connected to the first conductive area. The first conductive area includes a first portion disposed over the protective-film layer and having a first crystal grain size, and a second portion disposed over the first portion and having a second crystal grain size, which is greater than the first crystal grain size.
Method of forming electrode, electrode manufactured therefrom and solar cell
A method of forming an electrode, an electrode for a solar cell manufactured, and a solar cell, the method including forming a pattern of a finger electrode by: coating a composition for forming a first electrode that includes a conductive powder, an organic vehicle, and a first glass frit that is free of silver and phosphorus, and drying the coated composition for forming a first electrode; forming a pattern of a bus electrode by: coating a composition for forming a second electrode that includes a conductive powder, an organic vehicle, and a second glass fit that includes silver and phosphorus, and drying the coated composition for forming a second electrode; and firing the resultant patterns.
Method of passivating an iron disulfide surface via encapsulation in zinc sulfide
A method for passivating the surface of crystalline iron disulfide (FeS.sub.2) by encapsulating it in crystalline zinc sulfide (ZnS). Also disclosed is the related product comprising FeS.sub.2 encapsulated by ZnS in which the sulfur atoms at the FeS.sub.2 surfaces are passivated. Additionally disclosed is a photovoltaic (PV) device incorporating FeS.sub.2 encapsulated by ZnS.