The invention relates to a photoactive semiconductor component, especially a photovoltaic solar cell, having a semiconductor substrate, a carbon-containing SiC layer disposed indirectly upon a surface of the semiconductor substrate, and a passivating intermediate layer disposed indirectly or directly between the SiC layer and semiconductor substrate, and a metallic contact connection disposed indirectly or directly upon a side of the SiC layer facing away from the passivating intermediate layer and in electrically conductive connection with the SiC layer, where the SiC layer has p-type or n-type doping, which is characterized in that the SiC layer partly has a partly amorphous structure and partly has a crystalline structure.

A thin film transistor array panel includes a substrate, an insulation layer, a first semiconductor, and a second semiconductor. The insulation layer is disposed on the substrate and includes a stepped portion. The first semiconductor is disposed on the insulation layer. The second semiconductor is disposed on the insulation layer and includes a semiconductor material different than the first semiconductor. The stepped portion is spaced apart from an edge of the first semiconductor.

The present application provides a silicon-based heterojunction solar cell and a manufacturing method thereof. The silicon-based heterojunction solar cell includes: a silicon substrate, as well as a first passivation layer, an N-type doped layer, a first transparent conductive oxide layer and a first electrode. The first passivation layer, the N-type doped layer, the first transparent conductive oxide layer and the first electrode are sequentially stacked on the front side of the silicon substrate along a first direction. The first passivation layer includes a first sub-passivation layer, a carbon-doped amorphous silicon layer and a second sub-passivation layer which are sequentially stacked along the first direction.

The present application provides a silicon-based heterojunction solar cell and a manufacturing method thereof. The silicon-based heterojunction solar cell includes: a silicon substrate, as well as a first passivation layer, an N-type doped layer, a first transparent conductive oxide layer and a first electrode. The first passivation layer, the N-type doped layer, the first transparent conductive oxide layer and the first electrode are sequentially stacked on the front side of the silicon substrate along a first direction. The first passivation layer includes a first sub-passivation layer, a carbon-doped amorphous silicon layer and a second sub-passivation layer which are sequentially stacked along the first direction.