A method of making a CIGS/inorganic thin film tandem semiconductor device including the steps of depositing a textured buffer layer on an inexpensive substrate, depositing a metal-inorganic film from a eutectic alloy on the buffer layer, the metal being selected from a group of CIGS elements, and adding the remaining CIGS elements to the metal, thereby growing a CIGS film on the inorganic film for the tandem semiconductor device.

A flexible display includes a plurality of pixel chips, chixels, provided on a flexible substrate. The chixels and the light emitters thereon may be shaped, sized and arranged to minimize chixel, pixel, and sub-pixel gaps and to provide a desired bend radius of the display. The flexible substrate may include light manipulators, such as filters, light converters and the like to manipulate the light emitted from light emitters of the chixels. The light manipulators may be arranged to minimize chixel gaps between adjacent chixels.

Manufacture for an improved stacked-layered thin film solar cell. Solar cell has reduced absorber thickness and an improved back contact for Copper Indium Gallium Selenide solar cells. The back contact provides improved reflectance particularly for infrared wavelengths while still maintaining ohmic contact to the semiconductor absorber. This reflectance is achieved by producing a back contact having a highly reflecting metal separated from an absorbing layer with a dielectric layer.

A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including CuZnSnS(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.

Manufacture of an improved stacked-layered thin film solar cell. The solar cell has reduced absorber thickness and an improved back contact for Copper Indium Gallium Selenide solar cells. The back contact provides improved reflectance particularly for infrared wavelengths while still maintaining ohmic contact to the semiconductor absorber. This reflectance is achieved by producing a back contact having a highly reflecting metal separated from an absorbing layer with a dielectric layer.

Sodium-containing aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points 540 C., thermal expansion coefficient of from 6.5 to 9.5 ppm/ C., as well as liquidus viscosities in excess of 50,000 poise. As such, they are ideally suited for being formed into sheet by the fusion process.

A flexible display includes a plurality of pixel chips, chixels, provided on a flexible substrate. The chixels and the light emitters thereon may be shaped, sized and arranged to minimize chixel, pixel, and sub-pixel gaps and to provide a desired bend radius of the display. The flexible substrate may include light manipulators, such as filters, light converters and the like to manipulate the light emitted from light emitters of the chixels. The light manipulators may be arranged to minimize chixel gaps between adjacent chixels.

A compositional range of high strain point and/or intermediate expansion coefficient alkali metal free aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates or superstrates for photovoltaic devices, for example, thin film photovoltaic devices such as CdTe or CIGS photovoltaic devices or crystalline silicon wafer devices. These glasses can be characterized as having strain points 600 C., thermal expansion coefficient of from 35 to 5010.sup.7/ C.

In order to improve the photoelectric conversion efficiency of a photoelectric conversion device, this photoelectric conversion device is provided with an electrode layer, a first semiconductor layer that is positioned on the electrode layer and contains a polycrystalline semiconductor, and a second semiconductor layer that is positioned on/above the first semiconductor layer and forms a p-n junction with the first semiconductor layer, and an average grain diameter of crystal grains in the first semiconductor layer is larger near the surface on the electrode layer side of the first semiconductor layer than the center of the first semiconductor layer in a thickness direction of the first semiconductor layer. Furthermore, the average grain diameter of the crystal grains in the first semiconductor layer is larger in a surface portion on the second semiconductor layer side of the first semiconductor layer than in the central portion.

A device having a plurality of thin film photovoltaic cells (PV) formed over a passivation layer. The device comprises a plurality of thin film photovoltaic (PV) cells formed over the passivation layer, each PV cell includes at least a lower conducting layer (LCL) and an upper conducting layer (UCL); and a conducting path connecting at least a UCL of a first PV cell to at least a LCL of a second PV cell, wherein at least a first array of PV cells comprised of at least a first portion of the plurality of PV cells is connected by the respective UCL and LCL of each PV cell to provide a first voltage output. In an embodiment the passivation layer is formed over a target integrated circuit (TIC), the TIC having a top surface and a bottom surface.