An electro-optic modulator may include a radio frequency (RF) modulation region including a first optical waveguide, a second optical waveguide, a first set of electrode segments, a second set of electrode segments, and a conductive strap. The first optical waveguide may propagate a first optical signal. The second optical waveguide may propagate a second optical signal. The first set of electrode segments may apply a first RF signal to the first optical waveguide. The second set of electrode segments may apply a second RF signal to the second optical waveguide. The conductive strap may enable photocurrent generated in the first optical waveguide and the second optical waveguide and flowing through a doped layer below the first optical waveguide and the second optical waveguide to be extracted from the electro-optic modulator. The conductive strap may be ohmically contacted with the doped layer.

A sensor package includes an encapsulation body formed from a mold compound having a front side and a back side opposite the front side, an optical sensor die embedded within the encapsulation body on the front side such that an active surface of the optical sensor die is uncovered by the encapsulation body, and a conductive via that extends from the front side to the back side through the encapsulation body. The sensor package also includes a topside redistribution layer arranged on the front side, the topside redistribution layer electrically connecting the optical sensor die to the conductive via, a connection element arranged on the back side for electrically connecting the sensor package to an integrated circuit device, and a backside redistribution layer arranged on the back side. The backside redistribution layer electrically connects the connection element to the conductive via.

A manufacturing method for an integrated structure of a waveguide and an active component is proposed. The manufacturing method includes providing a substrate including a dielectric layer and a semiconductor layer, and the semiconductor layer includes a waveguide region, a transition region and an active component region; etching the semiconductor layer to form a plurality of waveguide trenches; depositing a waveguide material on the semiconductor layer to form a deposition layer, and the waveguide trenches are filled with the waveguide material; performing an ion implantation process on the semiconductor layer to form a first doped portion and a second doped portion; etching the waveguide region, the transition region and the active component region to form a waveguide structure, a transition structure and an active component structure; depositing a cover layer on the dielectric layer; forming two via holes and two contact pads in the cover layer.

A wiring base includes a base having a first surface, at least one metal layer positioned on the first surface, at least one lead terminal positioned on the metal layer, and a joining member that is positioned on the metal layer and joins the lead terminal to the metal layer. The lead terminal has a first portion to be in contact with the joining member and also has a second portion being continuous with the first portion. In a cross section of the lead terminal orthogonal to a longitudinal direction of the lead terminal, the first portion has two concave surfaces that are formed near the metal layer so as to be disposed opposite to each other across a center in a transverse direction of the lead terminal.

An optical semiconductor package includes a first chip, a second chip, a first resin portion formed to cover a side surface of the first chip, a second resin portion formed to cover a side surface of the second chip, a first terminal provided on a first inner surface of the first chip, a second terminal provided on a second inner surface of the second chip, and a first wiring electrically connected to the first terminal, passing through an inside of the first resin portion, and extending from a first inner surface side to a first outer surface side of the first chip in a facing direction in which the first inner surface and the second inner surface face each other. The second chip is an optical element. The first resin portion and the second resin portion are integrally provided or continuously provided via another member.

An isolation system and isolation device are disclosed. An illustrative isolation device is disclosed to include a transmitter circuit to generate a first current in accordance with a first signal, a first elongated conducting element to generate a magnetic field when the first current flows through the first elongated conducting element, a second elongated conducting element adjacent to the first elongated conducting element so as to receive the magnetic field. The second elongated conducting element is configured to generate an induced current when the magnetic field is received. The receiver circuit is configured to receive the induced current as an input, and configured to generate a reproduced first signal as an output of the receiver circuit.

A dielectric substrate has a first surface including a first terminal connector and a second terminal connector located along a first side surface. A recess is between the first terminal connector and the second terminal connector. The recess has a first inner surface continuous with the first terminal connector, a second inner surface continuous with the second terminal connector, and a bottom surface between the first inner surface and the second inner surface. The first terminal connector has first wettability with a bond on its surface, and a first region has second wettability with the bond on its surface lower than the first wettability.

To improve the measurement accuracy. The present technology provides a light receiving device (1) including: a light transmitting part (11) that transmits emitted light emitted from a light emitting device; a light receiver (12) that receives incident light from outside; and a semiconductor substrate (13), in which a non-sensitive region (14) that does not sense light is formed between the light transmitting part (11) and the light receiver (12). Moreover, the present technology provides a manufacturing method for a light receiving device (1) including: stacking a light receiver (12) on one surface of a semiconductor substrate (13); etching a side on which the light receiver (12) is disposed into a ring shape; fixing the semiconductor substrate (13) to a permanent fixing substrate; etching an outer periphery and substantially a center portion of the light receiver (12); and removing the semiconductor substrate (13) from the permanent fixing substrate by laser lift off.

A semiconductor device includes a first semiconductor layer; an insulation member layer formed on the first semiconductor layer; a transistor disposed in an upper portion of the insulation member layer; a first interlayer insulation film covering the transistor; a layered member including a wiring layer formed on the first interlayer insulation film and a second interlayer insulation film; and a first penetrating electrode penetrating through the insulation member layer, the first interlayer insulation film, and the layered member. The first penetrating electrode is electrically connected only to the first semiconductor layer.

The semiconductor device comprises a semiconductor substrate (1), a photosensor (2) integrated in the substrate (1) at a main surface (10), an emitter (12) of radiation mounted above the main surface (10), and a cover (6), which is at least partially transmissive for the radiation, arranged above the main surface (10). The cover (6) comprises a cavity (7), and the emitter (12) is arranged in the cavity (7). A radiation barrier (9) can be provided on a lateral surface of the cavity (7) to inhibit cross-talk between the emitter (12) and the photosensor (2).