A display device includes an array substrate, light emitting elements and light shielding units. The light emitting elements are disposed on the array substrate and electrically connected to the array substrate, where each of the light emitting elements has a first surface and a second surface opposite to the first surface. The second surfaces face the array substrate. The light shielding units are disposed on the array substrate and arranged alternately with the light emitting elements, where the light shielding units expose the first surfaces, and each of the light shielding units has a top and a bottom opposite to the top. The bottoms face the array substrate, and a cavity is existed between the bottoms and the array substrate.

Disclosed are an antioxidant, a backlight module and a manufacturing method thereof. The antioxidant includes a film-forming component and a volatilization-suppressing additive. The film-forming component includes at least one of a substituted or unsubstituted acrylic resin, isopropanolamine, and imidazoline, and a boiling point of the volatilization-suppressing additive is greater than that of the film-forming component.

A method for manufacturing an LED structure includes forming a first semiconductor layer on a first substrate; performing a first implantation operation to form a first implanted region and a first non-implanted region in a second doping semiconductor layer of the first semiconductor layer; forming a second semiconductor layer on the first semiconductor layer; performing a second implantation operation to form a second implanted region and a second non-implanted region in a fourth doping semiconductor layer of the second semiconductor layer; performing a first etch operation to remove a portion of the second semiconductor layer and expose at least the first non-implanted region; performing a second etch operation to expose a plurality of contacts of a driving circuit formed in the first substrate; and electrically connecting the first non-implanted region and the second non-implanted region with the plurality of contacts.

Disclosed is a Light-Emitting Device-Thin Film Transistor (LED-TFT) integration structure, comprising a substrate comprising a light emitting area and a driving area; a metal reflective film formed on the substrate; a buffer layer formed on the metal reflective film; LED disposed in the light emitting area; a protective layer formed on the LED; a thin film transistor disposed in the driving area and configured to drive the LED; and an ohmic contact metal for electrically connecting a cathode of the LED with the metal reflective film, wherein the LED and the thin film transistor are integrally formed on the substrate.

A wiring substrate, a manufacturing method thereof, a light-emitting panel, and a display device are disclosed. The wiring substrate includes: a base substrate (11); and a plurality of metal traces (50) and an organic insulating layer (13), which are located at one side of the base substrate. The metal traces (50) each comprise a first metal layer (141) and a second metal layer (151), which are stacked; the first metal layer (141) is located between the second metal layer (151) and the base substrate (11); an angle between a side wall of the second metal layer (151) and the base substrate (11) is greater than or equal to 90; the area of a contact face between each of the metal traces (50) and the base substrate (11) is greater than or equal to the area of the surface of the second metal layer (151) opposite the first metal layer (141).

A method for manufacturing a light-emitting device includes providing a layered body including a wavelength conversion layer, a light-transmissive layer disposed above the wavelength conversion layer, and a semiconductor layer disposed above the light-transmissive layer, separating the semiconductor layer into a plurality of semiconductor portions above the wavelength conversion layer by removing a part of the semiconductor layer; and singulating the layered body into a plurality of light-emitting devices by cleaving the wavelength conversion layer along a portion where the part of the semiconductor layer is removed.

An optical projection device and a method of producing the optical projection device are described. The optical projection device includes: a plurality of LEDs (light-emitting diodes), the LEDs each including a semiconductor mesa laterally spaced apart from one another by a grid structure. Each of the semiconductor mesas includes an n-type material and a p-type material adjoining at least partly the n-type material. The grid structure at least partly laterally surrounds at least the n-type material of each of the semiconductor mesas. The grid structure includes a conductive material that electrically interconnects the n-type material of the semiconductor mesas. The grid structure is configured to block optical crosstalk between light emitted by the LEDs.

A method for manufacturing an electronic device includes following steps: providing a substrate structure having a plurality of recesses, wherein each of the plurality of recesses has a first portion and a second portion connected to the first portion, and an area of the first portion is greater than an area of the second portion; providing a plurality of electronic units to the plurality of recesses; detecting a location of at least one of the plurality of electronic units, so as to determine whether the at least one of the plurality of electronic units is disposed in one of the second portions of the plurality of recesses; and positioning the at least one of the plurality of electronic units in the one of the second portions of the plurality of recesses when the at least one of the plurality of electronic units is disposed in a defective location.

A process for manufacturing an electroluminescent device, comprising: (a) using a stack comprising, successively: a substrate having a surface; matrix arrays of pixels formed on the surface of the substrate, of columnar shape; an encapsulating layer arranged to cover the matrix arrays of pixels; a dielectric layer formed on the encapsulating layer; (b) performing a directional etch along the normal to the surface of the substrate, of a portion of the dielectric layer extending between the pixels of the matrix arrays of pixels; the dielectric layer having a portion remaining at the end of step (b); and (c) performing a selective chemical etch of the remaining portion of the dielectric layer with a chemical etchant that permits selective etching of the remaining portion of the dielectric layer with respect to the encapsulating layer.

In an embodiment, an optoelectronic component includes a structured region including a semiconductor body having a first semiconductor region and a second semiconductor region, which have different conductivities, a first main surface and a second main surface and at least one first delimiting surface and at least one second delimiting surface delimiting a recess, a protective layer, which is arranged on the at least one first delimiting surface and covers a junction between the first semiconductor region and the second semiconductor region in the recess, wherein the first main surface is not covered by the protective layer and the protective layer does not adjoin any further protective layer on a side facing the junction and on a side facing away from the junction, and wherein the protective layer is retracted from the first delimiting surface and the second delimiting surface or wherein the protective layer has an L-shape in cross-section.