Provided is a display apparatus including a first display area in which sub-pixels are arranged, and a second display area adjacent to the first display area, and including a second pixel area in which there is a second pixel having a rectangular shape in plan view, and including two first sub-pixels spaced apart from each other in a first direction at a lower portion of the second pixel area, two second sub-pixels, and two third sub-pixels are arranged, and transmission areas surrounding the second pixel area, wherein a portion of one of the first sub-pixels has an arc shape of a circle having a same center as a circular shape of an adjacent one of the transmission areas.

A display device comprises a display area, a non-display area surrounding the display area, pixels disposed in the display area of the substrate, each of the pixels including a first electrode, a second electrode, and light-emitting elements electrically connected to the first electrode and the second electrode, and a first voltage wiring disposed in the display area and the non-display area, the first voltage wiring electrically connected to at least some of the pixels. The first voltage wiring includes a first separation wiring disposed in the non-display area, and a second separation wiring disposed in the non-display area and spaced apart from the first separation wiring.

A micro light-emitting device includes an epitaxial structure, a first electrode, a second electrode, a first contact layer and a diffusion structure. The epitaxial structure includes a first-type semiconductor layer, an active layer and a second-type semiconductor layer stacked in sequence. The second-type semiconductor layer has an outer surface relatively away from the first-type semiconductor layer. The first and second electrodes are respectively disposed on the epitaxial structure and electrically connected to the first-type and the second-type semiconductor layers. The first contact layer is disposed between the first electrode and the first-type semiconductor layer. The diffusion structure is disposed on a side of the second-type semiconductor layer away from the first-type semiconductor layer. A conductivity of the diffusion structure is less than that of the second-type semiconductor layer. The outer surface of the second-type semiconductor layer exposes a lower surface of the diffusion structure away from the first-type semiconductor layer.

Horizontal Cavity Surface Emitting Lasers (HCSELs) with angled facets may be fabricated by a chemical or physical etching process, and the epitaxially grown semiconductor device layers may be transferred through a selective etch and release process from their original epitaxial substrate to a carrier wafer.

The disclosure describes various aspects of monolithic integration of different light emitting structures on a same substrate. In an aspect, a device for light generation is described having a substrate with one or more buffer layers made a material that includes GaN. The device also includes light emitting structures, which are epitaxially grown on a same surface of a top buffer layer of the substrate, where each light emitting structure has an active area parallel to the surface and laterally terminated, and where the active area of different light emitting structures is configured to directly generate a different color of light. The device also includes a p-doped layer disposed over the active area of each light emitting structure and made of a p-doped material that includes GaN. The device may be part of a light field display and may be connected to a backplane of the light field display.

A process for manufacturing an electroluminescent device, comprising: (a) using a stack comprising, successively: a substrate having a surface; matrix arrays of pixels formed on the surface of the substrate, of columnar shape; an encapsulating layer arranged to cover the matrix arrays of pixels; a dielectric layer formed on the encapsulating layer; (b) performing a directional etch along the normal to the surface of the substrate, of a portion of the dielectric layer extending between the pixels of the matrix arrays of pixels; the dielectric layer having a portion remaining at the end of step (b); and (c) performing a selective chemical etch of the remaining portion of the dielectric layer with a chemical etchant that permits selective etching of the remaining portion of the dielectric layer with respect to the encapsulating layer.

In an embodiment, an optoelectronic component includes a structured region including a semiconductor body having a first semiconductor region and a second semiconductor region, which have different conductivities, a first main surface and a second main surface and at least one first delimiting surface and at least one second delimiting surface delimiting a recess, a protective layer, which is arranged on the at least one first delimiting surface and covers a junction between the first semiconductor region and the second semiconductor region in the recess, wherein the first main surface is not covered by the protective layer and the protective layer does not adjoin any further protective layer on a side facing the junction and on a side facing away from the junction, and wherein the protective layer is retracted from the first delimiting surface and the second delimiting surface or wherein the protective layer has an L-shape in cross-section.

A device for facilitating emitting light is disclosed. Accordingly, the device may include at least one substrate, at least one first layer configured to be placed on the at least one substrate. Further, the at least one first layer may be an n-type nitride based semiconductor layer. At least one second layer configured to be placed on the at least one first layer. Further, the at least one second layer may be a nitride based semiconductor. At least one third layer configured to be placed on the at least one second layer. Further, the at least one third layer may be a p-type semiconductor layer. At least one fourth layer configured to be placed on the at least one third layer. Further, the at least one fourth layer may include at least one transparent electrode.

A method for increasing carrier confinement in light-emitting devices may comprise (1) selectively depositing material over a layered structure of a light-emitting device and (2) defining an emitter size of the light-emitting device by causing the material to disorder regions of a light-emitting layer included in the layered structure. Various other apparatuses, systems, and methods are also disclosed.

A light emitting device including a first light emitting stack, a second light emitting stack, and a third light emitting stack each including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, a first adhesive layer bonding the first light emitting stack and the second light emitting stack, and a second adhesive layer bonding the second light emitting stack and the third light emitting stack, in which the second light emitting stack is disposed between the first light emitting stack and the third light emitting stack, and one of the first adhesive layer and the second adhesive layer electrically connects adjacent light emitting stacks.