H10H29/8515

LIGHTING DEVICE
20250093011 · 2025-03-20 ·

A lighting device may include a substrate, light sources, a resin layer disposed on the substrate and the light sources, and a phosphor layer disposed on the resin layer. A surface of the resin layer has a flat upper surface and a plurality of side surfaces on an outer side of the flat upper surface. At least one of the plurality of side surfaces of the resin layer has a curved surface. The phosphor layer has a first region disposed on the flat upper surface of the resin layer and a second region disposed on the plurality of side surfaces of the resin layer. Light generated from the plurality of light sources is emitted through the flat upper surface and the curved surface of the resin layer.

METHOD FOR MANUFACTURING A COLOUR-CONVERSION OPTOELECTRONIC DEVICE, INCLUDING A STEP OF POLARISING AN ELECTRET LAYER IN A LOCALISED MANNER BY MEANS OF THE UPPER ELECTRODES OF THE DIODES

The invention relates to a method for manufacturing an optoelectronic device (1) including an array of diodes (D1, D2, D3) and an array of colour conversion portions (P1, P2), including the following steps: providing the array of diodes (D1, D2, D3), and the upper electrode layers (E1, E2, E3); depositing a dielectric layer (26) having a substantially zero surface potential; applying a potential difference between an electrode (2) and the first upper electrode layers (E1), resulting in the formation of first patterns (M1) with non-zero surface potential in the dielectric layer (26); producing the first colour conversion portions (P1), by contacting the dielectric layer (26) with a colloidal solution (S1) containing first photoluminescent particles (p1).

DISPLAY DEVICE

A display device is provided in the disclosure. The display device includes a first flexible substrate, a second flexible substrate, a display unit, a color conversion layer, a support layer, a first adhesive layer, a protective layer and a second adhesive layer. The second flexible substrate is disposed opposite to the first flexible substrate. The display unit is disposed between the first flexible substrate and the second flexible substrate. The color conversion layer is disposed between the second flexible substrate and the display unit. The support layer is disposed under the first flexible substrate. The first adhesive layer is disposed between the support layer and the first flexible substrate. The protective layer is disposed on the second flexible substrate. The second adhesive layer is disposed between the second flexible substrate and the protective layer.

NEAR-INFRARED LIGHT EMITTING DEVICE AND METHOD FOR ADJUSTING INTENSITY RATIO OF NEAR-INFRARED RAY AND VISIBLE RAY

Provided is a near-infrared light emitting device including a solid-state light emitting element that emits blue primary light, a wavelength converter that converts the primary light into near-infrared wavelength-converted light, an organic polymer member through which mixed light of the primary light and the wavelength-converted light is transmitted. The organic polymer member has a thickness of 3 m or more and less than 300 m, a light transmittance of less than 0.1% at a wavelength of 400 nm or less, a light transmittance of less than 1% at or below a wavelength of the emission peak of the primary light, and a light transmittance of less than 30% at a wavelength of 500 nm or less, a light transmittance of 75% or more and less than 100% within a wavelength range of 750 nm or more and less than 1,100 nm.

LIGHT EMITTING DEVICES INCLUDING A QUANTUM DOT COLOR CONVERSION MATERIAL AND METHOD OF MAKING THEREOF

A method of forming a light emitting device includes providing a free standing support containing a matrix material including first and second vias, depositing in the first vias a first photocurable quantum dot ink including first quantum dots suspended in a first photocurable polymer, illuminating the first photocurable quantum dot ink with ultraviolet radiation or blue light from first LEDs of an array of LEDs to crosslink the first photocurable polymer material in the first vias, depositing in the second vias a second photocurable quantum dot ink comprising second quantum dots suspended in a second photocurable polymer material, illuminating the second photocurable quantum dot ink with ultraviolet radiation or blue light from second LEDs of the array of LEDs to crosslink the second photocurable polymer material in the second vias, and attaching the free standing support to the array of LEDs after the illuminating.

DISPLAY DEVICE

A display device may include a plurality of light emitting elements on a substrate and arranged in a matrix form along a first arrangement direction and a second arrangement direction crossing the first arrangement direction, and a first sub pixel area and a second sub pixel area each overlapping at least a portion of the plurality of light emitting elements, spaced from each other in a first direction, and extending in a second direction crossing the first direction. The second direction and the first arrangement direction may be non-parallel to each other.

LED LAMP WITH INFRARED OUTPUT
20250318323 · 2025-10-09 · ·

An LED device, particularly an LED lamp, includes pump LEDs and one or more phosphors allowing the lamp to emit both visible light and SWIR (short-wave infrared) useful in, for example, aviation safety. The emission spectrum of the phosphors provides SWIR light that has high transmission in air with a high water vapor concentration, making it suitable for use with SWIR cameras employed in aircraft. The layout of the LED device also delivers the sufficient visible flux required in aviation safety.

OPTOELECTRONIC SEMICONDUCTOR COMPONENTS
20250393372 · 2025-12-25 ·

An optoelectronic semiconductor component is provided. The optoelectronic semiconductor component includes a base, an electrical connection structure located on the base, a plurality of light-emitting chips located on the electrical connection structure, a plurality of wavelength converters located on the light-emitting chips, and a separation structure located on the electrical connection structure and covering the light-emitting chips and the wavelength converters. The base includes a base material and a plurality of conductor parts. The base material covers the conductor parts which penetrate the base material. The electrical connection structure includes an intermediate part and a plurality of metal parts The intermediate part covers the metal parts. A part of the conductor parts of the base extends into the electrical connection structure and are electrically connected to the metal parts of the electrical connection structure. The metal parts extend into the separation structure and are electrically connected to the light-emitting chips.

DISPLAY APPARATUS
20260020412 · 2026-01-15 · ·

A display apparatus including a substrate, a light-emitting device and a bank structure is provided. The light-emitting device is bonded to the substrate, and has a forward light-emitting surface, a first edge and a second edge. A length of the first edge along a first direction is greater than a length of the second edge along a second direction. The first direction and the second direction intersect each other. The bank structure has a first portion and a second portion. The first portion is disposed facing the first edge along the second direction. The second portion is disposed facing the second edge along the first direction. In a normal direction of the substrate surface, a first top surface of the first portion is lower than the forward light-emitting surface, and a second top surface of the second portion is higher than the forward light-emitting surface.

LIGHT-EMITTING DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF

A light-emitting diode structure and a manufacturing method thereof are provided. The light-emitting diode structure includes a substrate, multiple light-emitting diode units, and a reflective layer. The light-emitting diode units are arranged in arrays on the substrate. Each of the light-emitting diode units includes a light-emitting diode chip, a wavelength conversion layer, and a short-pass filter coating. The light-emitting diode chip is disposed on the substrate in a flip-chip manner. The wavelength conversion layer is disposed on the light-emitting diode chip. The short-pass filter coating is disposed between the wavelength conversion layer and the light-emitting diode chip. The reflective layer is filled in a gap between the light-emitting diode chips of the light-emitting diode units and is disposed on a side surface of the light-emitting diode chips.